Crystallized YPtBi (111) Topological Semi-Metal (TSM) Induced by (111) or (002)-(111) Buffers
The present disclosure generally relates to spintronic devices comprising a YPtBi layer having a (111) orientation. The spintronic stack further comprises a ferromagnetic layer and a buffer layer. The buffer layer has a (002) or (111) orientation, which promotes the (111) orientation of the YPtBi layer. The buffer layer comprises an amorphous oxide or nitride layer, an amorphous metal layer disposed on the amorphous oxide or nitride layer, a textured pre-seed layer disposed on the amorphous metal layer, and one of: a (002) hexagon or (111) fcc layer, a B2 alloy layer, or first and second bcc or B2 alloy layers.
1 . A spintronic stack, comprising:
a YPtBi layer having a (111) orientation;
a ferromagnetic layer; and
a buffer layer, the buffer layer comprising:
an amorphous oxide or nitride layer;
an amorphous metal layer disposed on the amorphous oxide or nitride layer;
a textured pre-seed layer disposed on the amorphous metal layer; and
a (002) hexagonal or (111) fcc layer disposed on the pre-seed layer, the (002)hexagonal or (111) fcc layer comprising a material selected from the group consisting of:
Fe 2 X, where X is one of Ti, Mo, Ta, or Ta z W 1−z , where z is a numeral between 0.005 and 1,
Co 2 X alloys, where X is one of Ti, Nb, Ta, TaAl, or NbAl,
(CoFe) 2 Ta,
Co 2 X, where X is one of Ti, Nb, Ta, Hf, or Zr,
Ni 5 Hf, and
X 5 Zr alloys, where X is one of Co, Ni, NiFe, or CuNi,
AuScSn,
BiCoZr,
BiNiY, and
Bi—XQ alloys, where X is one of Ni, Pd, or Pt, and Q is Gd or Dy.
2 . The spintronic stack of claim 1 , wherein the textured pre-seed layer comprises Ru, wherein the amorphous oxide or nitride layer comprises alumina, and wherein the amorphous metal layer comprises NiFeTa, CoFeTaN, NiFeTaN, or CoFeTa.
3 . The spintronic stack of claim 1 , wherein the YPtBi layer is disposed between the buffer layer and the ferromagnetic layer.
4 . The spintronic stack of claim 1 , wherein the ferromagnetic layer is disposed between the buffer layer and the YPtBi layer.
5 . The spintronic stack of claim 1 , wherein the (002) hexagonal or (111) fcc layer has a thickness of about 5 Å to about 40 Å.
6 . A memory cell comprising the spintronic stack of claim 1 .
7 . A logic cell comprising the spintronic stack of claim 1 .
8 . A magnetic sensor comprising the spintronic stack of claim 1 .
9 . A magnetic recording device comprising the spintronic stack of claim 1 .
10 . A spintronic stack, comprising:
a YPtBi layer having a (111) orientation;
a ferromagnetic layer; and
a buffer layer, the buffer layer comprising:
an amorphous oxide or nitride layer;
an amorphous metal layer disposed on the amorphous oxide or nitride layer;
a textured pre-seed layer disposed on the amorphous metal layer; and
a bcc or B2 alloy layer disposed on the textured pre-seed layer, the bcc or B2 alloy layer comprising a material selected from the group consisting of:
MgAu,
Sc—X, where X is one of Al, Ni, Pd, or Au,
Ti—X, where X is one of Ru, Rh, Pd, Pt, or Au,
Ru—X where X is one of Ti, Zr, Hf, or Ta,
Ta x W 1−x (where x is a numeral between 0.005 and 1),
Ir—X, where X is one of Sc, Ti, Y, or Zr,
Hf—X, where X is one of Co, Ni, Ru, or Pt,
Zr—X, where X is one of Ti, Co, Cu, Rh, Ru, or Os,
(AlMo) 0.5 Ti,
(AlV) 0.5 Ru,
(AlZr) 0.5 Ru,
(HfTi) 0.5 Ru,
(Co4Ni) 0.2 Zr,
(Co4Fe) 0.2 Zr, and
(NbZr3) 0.25 Co.
11 . The spintronic stack of claim 10 , wherein the bcc or B2 alloy layer has a (111) orientation.
12 . The spintronic stack of claim 10 , wherein the textured pre-seed layer comprises Ru having a (002)orientation.
13 . The spintronic stack of claim 10 , wherein the YPtBi layer is disposed between the buffer layer and the ferromagnetic layer.
14 . The spintronic stack of claim 10 , wherein the ferromagnetic layer is disposed between the buffer layer and the YPtBi layer.
15 . A memory cell comprising the spintronic stack of claim 10 .
16 . A logic cell comprising the spintronic stack of claim 10 .
17 . A magnetic sensor comprising the spintronic stack of claim 10 .
18 . A magnetic recording device comprising the spintronic stack of claim 10 .
19 . A spintronic stack, comprising:
a YPtBi layer having a (111) orientation;
a ferromagnetic layer; and
a buffer layer, the buffer layer comprising:
an amorphous oxide or nitride layer;
an amorphous metal layer disposed on the amorphous oxide or nitride layer;
a textured pre-seed layer disposed on the amorphous metal layer;
a first bcc or B2 alloy layer disposed on the textured pre-seed layer; and
a second bcc or B2 alloy layer disposed on the first bcc or B2 alloy layer,
the first and second bcc or B2 alloy layers each individually comprising a material selected from the group consisting of:
MgAu,
Sc—X, where X is one of Al, Ni, Pd, or Au,
Ti—X, where X is one of Ru, Rh, Pd, Pt, or Au,
Ru—X where X is one of Ti, Zr, Hf, or Ta,
Ta x W 1−x (where x is a numeral between 0.005 and 1),
Ir—X, where X is one of Sc, Ti, Y, or Zr,
Hf—X, where X is one of Co, Ni, Ru, or Pt,
Zr—X, where X is one of Ti, Co, Cu, Rh, Ru, or Os,
(AlMo) 0.5 Ti,
(AlV) 0.5 Ru,
(AlZr) 0.5 Ru,
(HfTi) 0.5 Ru,
(Co4Ni) 0.2 Zr,
(Co4Fe) 0.2 Zr, and
(NbZr3) 0.25 Co,
wherein the first and second bcc or B2 alloy layers comprise different materials.
20 . The spintronic stack of claim 19 , wherein the first bcc or B2 alloy layer has a lower a hcp value than the second bcc layer.
21 . The spintronic stack of claim 19 , wherein the first bcc or B2 alloy layer has a thickness of about 5 Å to about 40 Å, and wherein the second bcc or B2 alloy layer has a thickness of about 5 Å to about 40 Å.
22 . A memory cell comprising the spintronic stack of claim 19 .
23 . A logic cell comprising the spintronic stack of claim 19 .
24 . A magnetic sensor comprising the spintronic stack of claim 19 .
25 . A magnetic recording device comprising the spintronic stack of claim 19 .