THREE-DIMENSIONAL INTEGRATED CIRCUIT WITH A CHIPPING AND DELAMINATION BARRIER AND ITS FABRICATION METHOD
A three-dimensional integrated circuit ( 3 D IC) including a first die, a second die, a bonding layer between the first and second dies. The bonding layer bonds the first and second dies. The 3 D IC also includes a chipping and delamination barrier (CDB) extending across the first die, the bonding layer, and the second die.
1 . A three-dimensional integrated circuit (3D IC), comprising:
a first die;
a second die;
a bonding layer between the first and second dies, wherein the bonding layer bonding the first and second dies; and
a chipping and delamination barrier (CDB) extending across the first die, the bonding layer, and the second die.
2 . The 3D IC of claim 1 , wherein the CDB comprises a trench, the trench containing nitride and tetraethyl orthosilicate.
3 . The 3D IC of claim 2 , wherein:
the first die comprising a first outside metal region;
the second die comprising second outside metal region;
the CDB and the first outside metal region are separated by a first distance equal to or greater than a predefined distance; and
the CDB and the second outside metal region are separated by a second distance equal to or greater than the predefined distance.
4 . The 3D IC of claim 1 , wherein:
the first die comprising a first outside metal region;
the second die comprising second outside metal region;
the CDB and the first outside metal region are separated by a first distance equal to or greater than a predefined distance; and
the CDB and the second outside metal region are separated by a second distance equal to or greater than the predefined distance.
5 . A three-dimensional integrated circuit (3D IC), comprising:
a first die comprising a first metal layer, an active layer, and a backside metal layer;
a second die;
a bonding layer between the first and second dies, wherein the bonding layer bonding the first and second dies; and
a chipping and delamination barrier (CDB) extending from the backside metal layer, through the active layer, to the first metal layer in the first die.
6 . The 3D IC of claim 5 , wherein the CDB comprises a trench, the trench containing nitride and tetraethyl orthosilicate.
7 . The 3D IC of claim 6 , wherein:
the first die comprising a first outside metal region in the first metal layer and an outside backside metal region in the backside metal layer;
the CDB and the first outside metal region are separated by a first distance equal to or greater than a predefined distance; and
the CDB and the outside backside metal region are separated by a second distance equal to or greater than the predefined distance.
8 . The 3D IC of claim 5 , wherein:
the first die comprising a first outside metal region in the first metal layer and an outside backside metal region in the backside metal layer;
the CDB and the first outside metal region are separated by a first distance equal to or greater than a predefined distance; and
the CDB and the outside backside metal region are separated by a second distance equal to or greater than the predefined distance.
9 . A three-dimensional integrated circuit (3D IC), comprising:
a first die comprising a backside metal layer;
a second die comprising first, second, and third metal layers;
a bonding layer between the first and second dies, wherein the bonding layer bonding the first and second dies; and
a chipping and delamination barrier (CDB) extending from the first metal layer, through the second metal layer, to the third metal layer in the second die.
10 . The 3D IC of claim 9 , wherein the CDB comprises a trench, the trench containing nitride and tetraethyl orthosilicate.
11 . The 3D IC of claim 10 , wherein:
the first die comprising a first outside metal region;
the second die comprising second outside metal region;
the CDB and the first outside metal region are separated by a first distance equal to or greater than a predefined distance; and
the CDB and the second outside metal region are separated by a second distance equal to or greater than the predefined distance.
12 . The 3D IC of claim 9 , wherein:
the first die comprising a first outside metal region;
the second die comprising second outside metal region;
the CDB and the first outside metal region are separated by a first distance equal to or greater than a predefined distance; and
the CDB and the second outside metal region are separated by a second distance equal to or greater than the predefined distance.
13 . A three-dimensional integrated circuit (3D IC), comprising:
a first die comprising a first metal layer, an active layer, and a backside metal layer;
a second die comprising a second metal layer;
a bonding layer between the first and second dies, wherein the bonding layer bonding the first and second dies; and
a chipping and delamination barrier (CDB) extending from the backside metal layer in the first die, through the active layer, the first metal layer, and the bonding layer, to the second metal layer in the second die.
14 . The 3D IC of claim 13 , wherein the CDB comprises a trench, the trench containing nitride and tetraethyl orthosilicate.
15 . The 3D IC of claim 14 , wherein:
the first die comprising a first outside metal region;
the second die comprising second outside metal region;
the CDB and the first outside metal region are separated by a first distance equal to or greater than a predefined distance; and
the CDB and the second outside metal region are separated by a second distance equal to or greater than the predefined distance.
16 . The 3D IC of claim 13 , wherein:
the first die comprising a first outside metal region;
the second die comprising second outside metal region;
the CDB and the first outside metal region are separated by a first distance equal to or greater than a predefined distance; and
the CDB and the second outside metal region are separated by a second distance equal to or greater than the predefined distance.
17 . A method for fabricating the three-dimensional integrated circuit (3D IC) of claim 1 , the method comprising:
forming the first die, the first die comprising a first trench;
forming the second die, the second die comprising a second trench;
bonding the first and second dies by the bonding layer, wherein the first and second trenches are combined as the chipping and delamination barrier (CDB) extending across the first die, the bonding layer, and the second die.
18 . A method for fabricating the three-dimensional integrated circuit (3D IC) of claim 5 , the method comprising:
forming the first die;
forming the second die;
bonding the first and second dies by the bonding layer; and
fabricating a trench,
wherein the trench extends from the backside metal layer of the first die to the first metal layer as the chipping and delamination barrier (CDB).
19 . A method for fabricating the three-dimensional integrated circuit (3D IC) of claim 13 , the method comprising:
forming the first die;
forming the second die;
bonding the first and second dies by the bonding layer; and
fabricating a trench,
wherein the trench extends from the backside metal layer of the first die, across the bonding layer, to the second metal layer of the second die as the chipping and delamination barrier (CDB).