IP Library Patent Application 19339435
Patent Application
App. No. 19/339,435

DETERMINING POTENTIAL DEFECTS IN MASK PATTERNS

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Quick Facts
Patent No.
US None
App. No.
19/339,435
Abstract

The technology involves differentiable mask manufacturing model that helps predict defects on the wafer. According to one aspect, a method includes receiving a mask design. Based on a gradient optimization, one or more parameters of one or more convolution kernels of a mask manufacturing model is determined. Using the one or more parameters of the one or more convolution kernels of the mask manufacturing model, a simulated mask pattern is generated based on the mask design. Whether the simulated mask pattern includes a defect is determined. Whether the mask design needs to be adjusted to avoid defects may also be determined.

Claims (37)

1 . A method comprising:

receiving, by one or more processors, a mask design;

determining, by the one or more processors based at least on a gradient optimization, one or more parameters of one or more convolution kernels of a mask manufacturing model;

generating, by the one or more processors using the one or more parameters of the one or more convolution kernels of the mask manufacturing model, a simulated mask pattern based at least on the mask design; and

determining, by the one or more processors, whether the simulated mask pattern includes a defect.

2 . The method of claim 1 , further comprising, adjusting, by the one or more processors, the mask design based at least on a determination that the simulated mask pattern includes the defect.

3 . The method of claim 2 , further comprising:

generating, by the one or more processors using the mask manufacturing model, another simulated mask pattern based at least on the adjusted mask design; and

determining, by the one or more processors, whether the other simulated mask pattern includes the defect.

4 . The method of claim 1 , further comprising, prior to generating the simulated mask pattern, initializing, by the one or more processors, one or more convolution kernels of the mask manufacturing model.

5 . The method of claim 4 , wherein initializing the one or more convolution kernels includes initializing a first kernel of the one or more convolution kernels as a gaussian kernel with a sigma corresponding to a point spread function.

6 . The method of claim 5 , wherein initializing the one or more convolution kernels further includes initializing a second kernel of the one or more convolution kernels as another gaussian kernel with a random, positive sigma.

7 . The method of claim 1 , further comprising:

determining, by the one or more processors, one or more convolutions of the mask design with one or more kernels; and

applying, by the one or more processors, a threshold to the one or more convolutions to generate one or more thresholded convolutions.

8 . The method of claim 7 , wherein generating the simulated mask pattern is further based at least on the thresholded convolutions.

9 . The method of claim 7 , further comprising, prior to determining the one or more convolutions, converting, by the one or more processors, the mask design to a raster format.

10 . The method of claim 1 , further comprising training, by the one or more processors based on the simulated mask pattern, a machine learning model to adjust the mask design.

11 . A system comprising:

memory configured to store at least one of a mask design and a mask manufacturing model; and

one or more processors operatively coupled to the memory, the one or more processors being configured to:

determine, based at least on a gradient optimization, one or more parameters of one or more convolution kernels of the mask manufacturing model;

generate, using the one or more parameters of the one or more convolution kernels of the mask manufacturing model, a simulated mask pattern based at least on the mask design; and

determine whether the simulated mask pattern includes a defect.

12 . The system of claim 11 , wherein the one or more processors are further configured to adjust the mask design based at least on a determination that the simulated mask pattern includes the defect.

13 . The system of claim 12 , wherein the one or more processors are further configured to:

generate, using the mask manufacturing model, another simulated mask pattern based at least on the adjusted mask design; and

determine whether the other simulated mask pattern includes the defect.

14 . The system of claim 11 , wherein the one or more processors are further configured to, prior to generation of the simulated mask pattern, initialize one or more convolution kernels of the mask manufacturing model.

15 . The system of claim 14 , wherein the one or more processors are further configured to initialize the one or more convolution kernels by being configured to initialize a first kernel of the one or more convolution kernels as a gaussian kernel with a sigma corresponding to a point spread function.

16 . The system of claim 15 , wherein the one or more processors are further configured to initialize the one or more convolution kernels by being configured to initialize a second kernel of the one or more convolution kernels initialized as another gaussian kernel with a random, positive sigma.

17 . The system of claim 11 , wherein the one or more processors are further configured to:

determine one or more convolutions of the mask design with one or more kernels; and

apply a threshold to the one or more convolutions to generate one or more thresholded convolutions.

18 . The system of claim 17 , wherein the one or more processors are further configured to generate the simulated mask pattern further based at least on the thresholded convolutions.

19 . The system of claim 17 , wherein the one or more processors are further configured to, prior to determination of the one or more convolutions, convert the mask design to a raster format.

20 . The system of claim 11 , wherein the one or more processors are further configured to train, based at least on the simulated mask pattern, a machine learning model to adjust the mask design.