VERTICAL CAVITY SURFACE EMITTING SEMICONDUCTOR LASER AND METHOD FOR PRODUCING SAME
A vertical cavity surface emitting semiconductor laser includes a multi-layered semiconductor structure having an optical resonator composed of semiconductor layers, the optical resonator includes a first Bragg mirror, a second Bragg mirror, and an active region between the first Bragg mirror and the second Bragg mirror for generating laser radiation. The active region has a plurality of active layers including a first and at least a second active layer, where the second active layer is a last active layer in front of the second Bragg mirror. A first oxide aperture for current constriction and a first tunnel diode are located between the first active layer and the second active layer, a second oxide aperture is located on a side of the second active layer which is remote from the first active layer. A second tunnel diode is located on the side of the second active layer.
1 . A vertical cavity surface emitting semiconductor laser, comprising;
a multi-layered semiconductor structure having an optical resonator composed of semiconductor layers,
wherein the optical resonator comprises:
a first Bragg mirror;
a second Bragg mirror; and
an active region between the first Bragg mirror and the second Bragg mirror for generating laser radiation,
wherein the active region has a plurality of active layers comprising a first and at least a second active layer,
wherein the second active layer is a last active layer in front of the second Bragg mirror,
wherein a first oxide aperture for current constriction and a first tunnel diode are located between the first active layer and the second active layer,
wherein a second oxide aperture is located on a side of the second active layer which is remote from the first active layer, and
wherein a second tunnel diode is located on the side of the second active layer which is remote from the first active layer.
2 . The vertical cavity surface emitting semiconductor laser according to claim 1 , wherein a layer sequence of an arrangement consisting of the second active layer, the second oxide aperture, and the second tunnel diode is the same as a layer sequence of an arrangement consisting of the first active layer, the first oxide aperture, and the first tunnel diode.
3 . The vertical cavity surface emitting semiconductor laser according to claim 2 , wherein, when viewed from the first Bragg mirror, the layer sequence of the arrangement consisting of the first and the second active layer, the first and the second oxide aperture, the first and the second tunnel diode is as follows: the first active layer—the first oxide aperture—the first tunnel diode—the second active layer—the second oxide aperture—the second tunnel diode.
4 . The vertical cavity surface emitting semiconductor laser according to claim 1 , wherein the first and the second tunnel diode each have a highly doped n-layer and a highly doped p-layer having a doping of at least 1E19 cm-3 wherein the highly doped p-layer of the second tunnel diode faces the second active layer and the highly doped n-layer of the second tunnel diode faces the second Bragg mirror.
5 . The vertical cavity surface emitting semiconductor laser according to claim 1 , wherein the first Bragg mirror and the second Bragg mirror are each an n-Bragg mirror.
6 . The vertical cavity surface emitting semiconductor laser according to claim 1 , wherein the active region has at least a third active layer which is located on a side of the first active layer which is remote from the second active layer, and wherein a third oxide aperture and a third tunnel diode are located between the third and the first active layer.
7 . The vertical cavity surface emitting semiconductor laser according to claim 6 , wherein a layer sequence of an arrangement consisting of the third active layer, the third oxide aperture, and the third tunnel diode is the same as a layer sequence of an arrangement consisting of the first active layer, the first oxide aperture, and the first tunnel diode.
8 . A method for producing a vertical cavity surface emitting semiconductor laser, comprising the steps of:
producing a multi-layered semiconductor structure having an optical resonator composed of semiconductor layers, wherein the optical resonator comprises:
a first Bragg mirror;
a second Bragg mirror; and
an active region between the first Bragg mirror and the second Bragg mirror for generating laser radiation, wherein the active region has a plurality of active layers comprising a first and at least a second active layer, and wherein the second active layer is the last active layer in front of the second Bragg mirror,
wherein the multi-layered semiconductor structure is produced such that a first oxidizable layer and a first tunnel diode are located between the first active layer and the second active layer, and a second oxidizable layer is located on a side of the second active layer which is remote from the first active layer, and a second tunnel diode is located on the side of the second active layer which is remote from the first active layer, and
oxidizing the first and the second oxidizable layer to generate a first oxide aperture and a second oxide aperture for current constriction.