IP Library › Patent Application 19452268
Patent Application
App. No. 19/452,268

Electrical, Mechanical, Computing and/or Other Devices Formed of High Temperature Superconducting Materials

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Patent No.
US None
App. No.
19/452,268
Abstract

Electrical, mechanical, computing, and/or other devices that include components formed of high temperature superconducting (HTS) materials, including, but not limited to, modified HTS materials, layered HTS materials, and new HTS materials, are described.

Claims (28)

1 - 6 . (canceled)

7 . An electrical device, comprising:

a component formed at least in part of a modified high temperature superconducting (HTS) material, wherein the modified HTS material comprises:

a layer of a first HTS material, the first HTS material having a crystalline structure, the first HTS material having a principal axis extending along an a-axis of its crystalline structure; and

a layer of a second HTS material immediately adjacent to and on top of the layer of the first HTS material, the second HTS material also having a crystalline structure, the second HTS material having a principal axis extending along an a-axis of its crystalline structure,

wherein the first HTS material and the second HTS material are different from one another.

8 . The electrical device of claim 7 , wherein the first HTS material and the second HTS material are different forms of the same HTS material.

9 . The electrical device of claim 8 , wherein the first HTS material comprises the same HTS material with a first stoichiometry and the second HTS material comprises the same HTS material with a second stoichiometry different from the first stoichiometry.

10 . The electrical device of claim 7 , wherein the first HTS material comprises YBCO and the second HTS material comprises NBCO.

11 . The electrical device of claim 7 , wherein the a-axis of the crystalline structure of the first layer of HTS material is parallel to the a-axis of the crystalline structure of the second layer of HTS material.

12 . A computing device, comprising:

a component formed at least in part of a modified high temperature superconducting (HTS) material, wherein the modified HTS material comprises:

a layer of a first HTS material, the first HTS material having a crystalline structure, the first HTS material having a principal axis extending along an a-axis of its crystalline structure; and

a layer of a second HTS material immediately adjacent to and on top of the layer of the first HTS material, the second HTS material also having a crystalline structure, the second HTS material having a principal axis extending along an a-axis of its crystalline structure,

wherein the first HTS material and the second HTS material are different from one another.

13 . The computing device of claim 12 , wherein the first HTS material and the second HTS material are different forms of the same HTS material.

14 . The computing device of claim 13 , wherein the first HTS material comprises the same HTS material with a first stoichiometry and the second HTS material comprises the same HTS material with a second stoichiometry different from the first stoichiometry.

15 . The computing device of claim 12 , wherein the first HTS material comprises YBCO and the second HTS material comprises NBCO.

16 . The computing device of claim 12 , wherein the a-axis of the crystalline structure of the first layer of HTS material is parallel to the a-axis of the crystalline structure of the second layer of HTS material.

17 . A mechanical device, comprising:

a component formed at least in part of a modified high temperature superconducting (HTS) material, wherein the modified HTS material comprises:

a layer of a first HTS material, the first HTS material having a crystalline structure, the first HTS material having a principal axis extending along an a-axis of its crystalline structure; and

a layer of a second HTS material immediately adjacent to and on top of the layer of the first HTS material, the second HTS material also having a crystalline structure, the second HTS material having a principal axis extending along an a-axis of its crystalline structure,

wherein the first HTS material and the second HTS material are different from one another.

18 . The mechanical device of claim 17 , wherein the first HTS material and the second HTS material are different forms of the same HTS material.

19 . The mechanical device of claim 18 , wherein the first HTS material comprises the same HTS material with a first stoichiometry and the second HTS material comprises the same HTS material with a second stoichiometry different from the first stoichiometry.

20 . The mechanical device of claim 17 , wherein the first HTS material comprises YBCO and the second HTS material comprises NBCO.

21 . The mechanical device of claim 17 , wherein the a-axis of the crystalline structure of the first layer of HTS material is parallel to the a-axis of the crystalline structure of the second layer of HTS material.