IP Library › Granted Patent US 1,046,801
Granted Patent S1
US 1,046,801 · App. 29/865,151 · Granted Oct 15, 2024

Semiconductor device

Inventors: Shuhei Yokoyama (Tokyo, JP); Shogo Shibata (Tokyo, JP)
Assignee: MITSUBISHI ELECTRIC CORPORATION
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Quick Facts
Patent No.
US 1,046,801
App. No.
29/865,151
Granted
Oct 15, 2024
Kind
S1
Claims (1)

The ornamental design for a semiconductor device as shown and described.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 11, 2022
From: YOKOYAMA, SHUHEI; SHIBATA, SHOGO
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 060474/0443 →
Priority Claims (1)
JP 2022-001595 D · Jan 28, 2022 · national