IP Library › Granted Patent US 1,132,891
Granted Patent S1
US 1,132,891 · App. 29/923,199 · Granted Jul 7, 2026

Semiconductor device

Inventors: Yun-Ya Chang (Hsinchu, TW); Sin-Pei Wang (Hsinchu, TW)
Assignee: Ennostar Corporation
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Quick Facts
Patent No.
US 1,132,891
App. No.
29/923,199
Granted
Jul 7, 2026
Kind
S1
Claims (1)

The ornamental design for a semiconductor device as shown and described.

Assignments (1)
CHANGE OF NAME Recorded Apr 22, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075513/0783 →