IP Library › Patent Application 60271322
Patent Application Provisional
App. No. 60/271,322 · Confirmation No. 4094

MRAM architecture with temperature dependent write current source to compensate for temperature-related switching field change of MRAM cells

Inventors: Xizeng Shi, Kevin Qi
Provisional Application Expired
⬇ PDF
 Code Description Pages PDF
2001-02-23 TRNA Transmittal of New Application 1 View
2001-02-23 SPEC Specification 4 View
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Quick Facts
App. No.
60/271,322
Filed
2001-02-23