Patent Application
Provisional
App. No. 60/754,072
· Confirmation No. 5620
Method for forming silicon-germanium layers at low temperatures, layers formed therewith and structures comprising such layers
Provisional Application Expired
Inventors
Sherif Sedky
Dokki, EGYPT
Ann Witvrouw
Herent, BELGIUM
Attorneys & Agents of Record
Prosecution
- Customer No.
- 20306
- Docket No.
- 05-1104
- Confirmation No.
- 5620
No recorded assignments were found for this patent.
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Quick Facts
- App. No.
- 60/754,072
- Filed
- 2005-12-21
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