IP Library › Granted Patent US 743,919
Granted Patent S1
US 743,919 · App. 29/496,790 · Granted Nov 24, 2015

Light-emitting diode

Inventors: Fu-Chun Tsai (Hsinchu, TW); Yi-Wen Huang (Hsinchu, TW); Shih-I Chen (Hsinchu, TW); Chia-Liang Hsu (Hsinchu, TW)
Assignee: EPISTAR CORPORATION
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Quick Facts
Patent No.
US 743,919
App. No.
29/496,790
Granted
Nov 24, 2015
Kind
S1
Claims (1)

The ornamental design for a light-emitting diode, as shown and described.

Assignments (1)
CHANGE OF NAME Recorded Apr 22, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075513/0783 →
Priority Claims (1)
TW 101305813 · Oct 3, 2012 · national
Continuity (1)
Continuation 29451515 · Apr 3, 2013