Rewritable nano-surface organic electrical bistable devices

1. A bistable electrical device that is convertible between a low resistance state and a high resistance state, said device comprising:

a first electrode that includes a first electrode surface;

a layer of low conductivity material having a first surface and a second surface wherein said first surface of said layer of low conductivity material is in electrical contact with said first electrode surface;

a second electrode that includes a second electrode surface; and

a buffer layer located between said second electrode surface and the second surface of said layer of low conductivity material,

wherein said buffer layer is constructed of a material and a form to provide control of metal ion migration from said second electrode to said layer of low conductivity material when a voltage is applied between said first and second electrodes to thereby provide a bistable behavior of said bistable electrical device, and

wherein said bistable electrical device is convertible between a high electrical resistance state and a low electrical resistance state when a first voltage is applied between said first and second electrodes and said bistable electrical device is convertible between said low electrical resistance state and a high electrical resistance state when a second voltage is applied between said first and second electrodes, said second voltage having a greater magnitude than said first voltage,

wherein said organic low conductivity material is 2-amino-4,5-imidazoledicarbonitrile.

2. A bistable electrical device that is convertible between a low resistance state and a high resistance state, said device comprising:

a first electrode that includes a first electrode surface;

a layer of low conductivity material having a first surface and a second surface wherein said first surface of said layer of low conductivity material is in electrical contact with said first electrode surface;

a second electrode that includes a second electrode surface;

a buffer layer located between said second electrode surface and the second surface of said layer of low conductivity material; and

a diode connected to at least one of said first or second electrodes,

wherein said buffer layer is constructed of a material and a form to provide control of metal ion migration from said second electrode to said layer of low conductivity material when a voltage is applied between said first and second electrodes to thereby provide a bistable behavior of said bistable electrical device, and

wherein said bistable electrical device is convertible between a high electrical resistance state and a low electrical resistance state when a first voltage is applied between said first and second electrodes and said bistable electrical device is convertible between said low electrical resistance state and a high electrical resistance state when a second voltage is applied between said first and second electrodes, said second voltage having a greater magnitude than said first voltage.

3. A memory device comprising:

A) a bistable electrical device comprising:

a first electrode that includes a first electrode surface;

a layer of low conductivity material having a first surface and a second surface wherein said first surface of said layer of low conductivity material is in electrical contact with said first electrode surface;

a second electrode that includes a second electrode surface; and

a buffer layer located between said second electrode surface and the second surface of said layer of low conductivity material;

B) a memory input element for applying a voltage to said bistable electrical device to convert said bistable electrical device between a low electrical resistance state and a high electrical resistance state; and

C) a memory readout element which provides an indication of whether said bistable electrical device is in said low electrical resistance state or said high electrical resistance state,

wherein said buffer layer is constructed of a material and a form to provide control of metal ion migration from said second electrode to said layer of low conductivity material when a voltage is applied between said first and second electrodes to thereby provide a bistable behavior of said bistable electrical device, and

wherein said memory readout element is a light emitting diode.

4. A bistable electrical device that is convertible between a low resistance state and a high resistance state, said device comprising:

a first electrode that includes a first electrode surface;

a layer of low conductivity material having a first surface and a second surface wherein said first surface of said layer of low conductivity material is in electrical contact with said first electrode surface;

a second electrode that includes a second electrode surface; and

a buffer layer located between said second electrode surface and the second surface of said layer of low conductivity material,

wherein said buffer layer is constructed of a material and a form to provide control of metal ion migration from said second electrode to said layer of low conductivity material when a voltage is applied between said first and second electrodes to thereby provide a bistable behavior of said bistable electrical device,

wherein said bistable electrical device is convertible between a high electrical resistance state and a low electrical resistance state when a first voltage is applied between said first and second electrodes and said bistable electrical device is convertible between said low electrical resistance state and a high electrical resistance state when a second voltage is applied between said first and second electrodes, said second voltage having a greater magnitude than said first voltage,

wherein said layer of low conductivity material comprises an inorganic material, and

wherein said inorganic material comprises a material selected from the group of materials consisting of silicon, gallium and gallium nitride.

5. A bistable electrical device according to claim 2 wherein said diode is a light emitting diode.

6. A bistable electrical device according to claim 2 or 3 , wherein said layer of low conductivity material comprises an inorganic material.

7. A bistable electrical device according to claim 2 or 4 , wherein said second electrode consists essentially of copper.

8. A bistable electrical device according to claim 1 , 2 or 4 wherein said second electrode comprises a metal selected from the group of metals consisting of metals having a relatively high diffusion coefficient in said layer of low conductivity material.

9. A bistable electrical device according to claim 1 , 2 or 4 , wherein said second electrode comprises a metal selected from the group of metals consisting of copper, gold, and silver.

10. A bistable electrical device according to claim 1 , 2 , 3 or 4 wherein said buffer layer is from 1 nanometer to 50 nanometers thick.

11. A bistable electrical device according to claim 1 , 2 , 3 or 4 wherein said buffer layer comprises particles of a low conducting material or insulating material that substantially covers said second electrode surface.

12. A bistable electrical device according to claim 1 , 2 , 3 or 4 wherein said buffer layer comprises a low conducting material or insulating material selected from the group consisting of sodium chloride, lithium fluoride and aluminum oxide.

13. A bistable electrical device according to claim 1 , 2 , 3 or 4 wherein said buffer layer is from 2 nanometers to 5 nanometers thick.

14. A bistable electrical device according to claim 10 wherein said buffer layer is from 1 nanometer to 10 nanometers thick.