Semiconductor light emitting device having a current narrowing portion and manufacturing method for semiconductor light emitting device

1. A semiconductor light emitting device comprising:

a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to the second semiconductor layer which are formed in this order; a first electrode to which a probe is connectable on a surface of the first semiconductor layer opposite to the emission layer, wherein said first electrode is in non-ohmic contact with the first semiconductor layer; and a second electrode which is positioned around the first electrode on a surface of the first semiconductor layer, and which is electrically connected to the first electrode and is in ohmic contact with the first semiconductor layer; and

a current narrowing portion formed on the transparent substrate bounding on the second semiconductor layer; wherein

the transparent substrate has a parallel surface almost parallel to the emission layer on an opposite side of the emission layer, and an inclined surface adjoining the parallel surface and inclined to the parallel surface and the current narrowing portion defines a light emitting region in the emission layer at a position almost identical to the first electrode in plan view.

2. The semiconductor light emitting device as defined in claim 1 , wherein

an edge between the inclined surface and the parallel surface is at a distance not less than 20 μm from a side surface of the transparent substrate toward inside in plan view, and an edge between the inclined surface and the side surface of the transparent substrate is at a distance not less than 20 μm from the parallel surface of the transparent substrate toward the emission layer in side view.

3. The semiconductor light emitting device as defined in claim 1 , wherein

the emission layer has at least one layer formed of (Al y Ga 1-y ) z In 1-z P(0≦y≦1, 0<z<1).

4. The semiconductor light emitting device as defined in claim 1 , wherein

the first electrode is circular shaped and has a diameter of not less than80 μm.

5. The semiconductor light emitting device as defined in claim 1 , wherein

the second electrode has a branch shape in plan view.

6. The semiconductor light emitting device as defined in claim 1 , wherein

the first electrode includes a reflection layer having a reflectance of not less than 90% and not more than 100% to light beams produced in the emission layer, and the reflection layer is in contact with the first semiconductor layer.

7. The semiconductor light emitting device as defined in claim 6 , wherein

the reflection layer contains at least Al, Ag or Au.