IP Library Granted Patent US 7,915,522
Granted Patent B2
US 7,915,522 · App. 12/130,241 · Granted Mar 29, 2011

Asymmetric surface texturing for use in a photovoltaic cell and method of making

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Quick Facts
Patent No.
US 7,915,522
App. No.
12/130,241
Granted
Mar 29, 2011
Kind
B2
Abstract

A novel surface texturing provides improved light-trapping characteristics for photovoltaic cells. The surface is asymmetric and includes shallow slopes at between about 5 and about 30 degrees from horizontal as well as steeper slopes at about 70 degrees or more from horizontal. It is advantageously used as either the front or back surface of a thin semiconductor lamina, for example between about 1 and about 20 microns thick, which comprises at least the base or emitter of a photovoltaic cell. In embodiments of the present invention, the shallow slopes are formed using imprint photolithography.

Claims (27)

1. A photovoltaic cell comprising:

a semiconductor lamina having a first textured surface and a second surface substantially parallel to the first textured surface, wherein

at least 50 percent of the first textured surface area is first faces and second faces, wherein the first faces are at an angle between about 5 and about 30 degrees from horizontal, and the second faces are at least seventy degrees from horizontal, wherein the photovoltaic cell comprises the semiconductor lamina,

wherein the semiconductor lamina has a thickness between the first and second surfaces, the thickness averaging between about 1 and about 50 microns,

wherein the semiconductor lamina is substantially monocrystalline semiconductor material.

2. The photovoltaic cell of claim 1 wherein the semiconductor material is silicon.

3. The photovoltaic cell of claim 1 wherein the spacing of the first faces is periodic.

4. The photovoltaic cell of claim 3 wherein the first faces comprise a first subset of first faces having a first orientation, and a second subset of first faces having a second orientation different from the first orientation, wherein the first subset of first faces comprises about half of the first faces.

5. The photovoltaic cell of claim 3 wherein the first faces are at a pitch of between about 0.3 micron and about 3 microns.

6. The photovoltaic cell of claim 1 wherein the spacing of the first faces is not periodic.

7. The photovoltaic cell of claim 1 wherein vertical peak-to-valley distance of the first textured surface does not exceed about 3000 angstroms.

8. The photovoltaic cell of claim 1 wherein the semiconductor lamina comprises at least a portion of the base of the photovoltaic cell.

9. The photovoltaic cell of claim 1 wherein the second surface of the semiconductor lamina is affixed to a receiver element, and wherein the second surface of the semiconductor lamina, or a surface of the receiver element, or a layer disposed between the second surface and the receiver element, is reflective.

10. The photovoltaic cell of claim 9 wherein, in the completed photovoltaic cell, the majority of light initially enters the semiconductor lamina at the first textured surface.

11. The photovoltaic cell of claim 1 wherein, in the completed photovoltaic cell, the majority of light initially enters the semiconductor lamina at the second surface.

12. A photovoltaic cell comprising:

a semiconductor lamina having a first textured surface and a second surface substantially parallel to the first textured surface, wherein

at least 50 percent of the first textured surface comprises first faces and second faces, wherein

the first faces are at an angle between ten and twenty-five degrees from horizontal, and the second faces are at least seventy degrees from horizontal, wherein

distribution of the first faces is not periodic, wherein

the photovoltaic cell comprises the semiconductor lamina,

wherein the semiconductor lamina has a thickness between the first and second surfaces, the thickness averaging between about 1 and about 50 microns,

and wherein the semiconductor material is monocrystalline.

13. The photovoltaic cell of claim 12 wherein the semiconductor material is silicon.

14. The photovoltaic cell of claim 12 wherein the semiconductor lamina is between about 0.5 and about 20 microns thick.

15. The photovoltaic cell of claim 12 wherein the semiconductor lamina is between about 1 and about 10 microns thick.

16. The photovoltaic cell of claim 12 wherein, in the completed photovoltaic cell, the majority of light enters the semiconductor lamina at the first textured surface.

Assignments (5)
CHANGE OF NAME Recorded May 16, 2023
From: NEUTRON THERAPEUTICS, INC.
To: NEUTRON THERAPEUTICS LLC
Reel/Frame 063662/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2015
From: GTAT CORPORATION D/B/A GT ADVANCED TECHNOLOGIES
To: NEUTRON THERAPEUTICS INC.
Reel/Frame 037047/0004 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2012
From: SILICON VALLEY BANK; TWIN CREEKS TECHNOLOGIES, INC.
To: GTAT CORPORATION
Reel/Frame 029275/0076 →
SECURITY INTEREST Recorded Sep 28, 2012
From: TWIN CREEKS TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 029124/0057 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 30, 2008
From: PETTI, CHRISTOPHER J.
To: TWIN CREEKS TECHNOLOGIES, INC.
Reel/Frame 021023/0368 →