Dry etching method, fine structure formation method, mold and mold fabrication method
View Patent ↗A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.
1. A dry etching method comprising the step of:
etching a substance including tungsten and carbon by using plasma generated from a gas including chlorine, wherein
the substance is a substrate or a layer made of a tungsten-carbon alloy or a material in which a total composition ratio of tungsten and carbon is 50 atomic % or more, and
the gas including chlorine includes a hydrogen chloride molecule, CClF 3 , CCl 3 F, CCl 2 F 2 , ICl, ClF 2 Br, ClF 2 I, BrCl, COCl 2 , ClFO 3 , NOCl, NO 2 Cl, SOCl 2 , SO 2 Cl 2 , SO 3 HCl, or a mixture of two or more thereof.
2. The dry etching method of claim 1 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and an inert gas.
3. The dry etching method of claim 1 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and a gas including oxygen.
4. The dry etching method of claim 3 ,
wherein the gas including oxygen includes an oxygen molecule, a nitrogen oxide molecule, a sulfur oxide molecule, a carbon oxide molecule, or a mixture of two or more thereof.
5. The dry etching method of claim 1 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and a gas including halogen other than chlorine.
6. The dry etching method of claim 5 ,
wherein the gas including halogen is a gas including fluorine, a gas including bromine, a gas including iodine, or a mixed gas of two or more thereof.
7. A fine structure formation method comprising the steps of:
forming a mask pattern on a substance including tungsten and carbon; and
etching, with the mask pattern used, the substance by using plasma generated from a gas including chlorine, wherein
the substance is a substrate or a layer made of a tungsten-carbon alloy or a material in which a total composition ratio of tungsten and carbon is 50 atomic % or more, and
the gas including chlorine includes a hydrogen chloride molecule, CClF 3 , CCl 3 F, CCl 2 F 2 , IC 1 , ClF 2 Br, ClF 2 I, BrCl, COCl 2 , ClFO 3 , NOCl, NO 2 Cl, SOCl 2 , SO 2 Cl 2 , SO 3 HCl, or a mixture of two or more thereof.
8. The fine structure formation method of claim 7 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and an inert gas.
9. The fine structure formation method of claim 7 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and a gas including oxygen.
10. The fine structure formation method of claim 9 ,
wherein the gas including oxygen includes an oxygen molecule, a nitrogen oxide molecule, a sulfur oxide molecule, a carbon oxide molecule, or a mixture of two or more thereof.
11. The fine structure formation method of claim 7 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and a gas including halogen other than chlorine.
12. The fine structure formation method of claim 11 ,
wherein the gas including halogen is a gas including fluorine, a gas including bromine, a gas including iodine, or a mixed gas of two or more thereof.
13. A mold fabrication method comprising the step of:
dry etching using plasma generated from a gas including chlorine, a substance including tungsten and carbon, thereby processing the substance to be a mold, wherein
the substance is a substrate or a layer made of a tungsten-carbon alloy or a material in which a total composition ratio of tungsten and carbon is 50 atomic % or more, and
the gas including chlorine includes a hydrogen chloride molecule, CClF 3 , CCl 3 F, CCl 2 F 2 , IC 1 , ClF 2 Br, ClF 2 I, BrCl, COCl 2 , ClFO 3 , NOCl, NO 2 Cl, SOCl 2 , SO 2 Cl 2 , SO 3 HCl, or a mixture of two or more thereof.
14. The mold fabrication method of claim 13 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and an inert gas.
15. The mold fabrication method of claim 13 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and a gas including oxygen.
16. The mold fabrication method of claim 15 ,
wherein the gas including oxygen includes an oxygen molecule, a nitrogen oxide molecule, a sulfur oxide molecule, a carbon oxide molecule, or a mixture of two or more thereof.
17. The mold fabrication method of claim 13 ,
wherein the plasma is generated from a mixed gas of the gas including chlorine and a gas including halogen other than chlorine.
18. The mold fabrication method of claim 17 ,
wherein the gas including halogen is a gas including fluorine, a gas including bromine, a gas including iodine, or a mixed gas of two or more thereof.