Semiconductor device including an insulating layer resistant to a photolithography process, electronic device, and electronic equipment
View Patent ↗A semiconductor device includes: an organic semiconductor layer made of an organic semiconductor material; a gate electrode for applying an electric field to the organic semiconductor layer; a first insulating layer insulating the gate electrode from the organic semiconductor layer; and a second insulating layer. The organic semiconductor layer is located between the first insulating layer and the second insulating layer, and the second insulating layer is composed of a polymer having a fluorene skeleton.
1. A semiconductor device, comprising:
a source electrode;
a drain electrode;
an organic semiconductor layer made of an organic semiconductor material;
a gate electrode that applies an electric field to the organic semiconductor layer;
a gate insulating layer that insulates the gate electrode from the organic semiconductor layer; and
a lower insulating layer,
the organic semiconductor layer being located between the gate insulating layer and the lower insulating layer, and the lower insulating layer being composed of a polymer having a fluorene skeleton,
the gate insulating layer directly contacting one of the source electrode and the drain electrode,
the gate insulating layer covering a side surface of the organic semiconductor layer,
the side surface crossing to a direction from the source electrode to the drain electrode, and
the polymer being obtained by copolymerizing a first polymerizable monomer, the first polymerizable monomer including the fluorene skeleton, and a second polymerizable monomer, the second polymerizable monomer including at least one of an epoxy group, an oxetane group, an acrylic acid group, and a methacrylic acid group; wherein
the first polymerizable monomer has a structure shown in Structural Formula 1, and the second polymerizable monomer has a structure shown in Structural Formula 2 or Structural Formula 3:
(wherein R 1 , R 2 , and R 3 in above formulas respectively represent the following: all of R 1 s are same substituents and have a hydrogen atom or a structure shown in any of Formulas 4 to 8; at least two of R 2 s are same substituents and R 2 s have a hydrogen atom or a structure shown in any of Formulas 4 to 8; and at least three of R 3 s are same substituents and R 3 s have a hydrogen atom or a structure shown in any of Formulas 4 to 8):
2. The semiconductor device according to claim 1 , wherein a main chain of the polymer includes an oxygen atom.
3. The semiconductor device according to claim 1 , wherein the polymer has a polyester skeleton.
4. The semiconductor device according to claim 1 , wherein the polymer includes a first structural portion derived from the first polymerizable monomer and a second structural portion derived from the second polymerizable monomer, and is 25 mol % to 75 mol % of the first structural portion.
5. The semiconductor device according to claim 1 , wherein the organic semiconductor material of the organic semiconductor layer has crystallinity.
6. The semiconductor device according to claim 1 , wherein the organic semiconductor layer is located between the lower insulating layer and the gate electrode.
7. The semiconductor device according to claim 1 , wherein an average thickness of the lower insulating layer is 0.01 μm to 10 μm.
8. An electronic device, comprising the semiconductor device according to claim 1 .
9. Electronic equipment, comprising the electronic device according to claim 8 .
10. The semiconductor device according to claim 1 , wherein the gate insulating layer is continuous and covers the organic semiconductor layer and portions of the source and drain electrodes.