Wet-tantalum reformation method and apparatus
View Patent ↗A method of reforming a wet-tantalum capacitor includes providing a medical device comprising a wet-tantalum capacitor. The capacitor has a rated voltage and including a hydrated anodic deposit. The method further includes charging the capacitor to a voltage that is less than approximately seventy-five percent of the rated voltage and at least partially discharging the capacitor after the charging step. The charging step is performed at a sufficient voltage to dehydrate the anodic deposit while not significantly decreasing the service life of the capacitor.
1. A method of reforming a wet-tantalum capacitor comprising:
providing a medical device comprising a wet-tantalum capacitor, the capacitor having a rated voltage and including a hydrated anodic deposit;
charging the capacitor to a voltage that is less than approximately seventy-five percent of the rated voltage; and
at least partially discharging the capacitor after the charging step;
wherein the charging step is performed at a sufficient voltage to dehydrate the anodic deposit while not significantly decreasing the service life of the capacitor.
2. The method of claim 1 , further comprising holding the capacitor at the voltage less than approximately seventy-five percent of the rated voltage for a time period greater than one hour.
3. The method of claim 1 , wherein the charging of the capacitor is performed automatically.
4. The method of claim 3 , wherein the charging of the capacitor is initiated by a microprocessing device, the microprocessing device configured to accord precedence to a therapeutic discharge of the capacitor over a process in which the capacitor is reformed.
5. The method of claim 1 , wherein the charging of the capacitor is periodic.
6. The method of claim 1 , wherein the charging of the capacitor is performed manually.
7. The method of claim 1 , wherein the step of at least partially discharging the capacitor comprises discharging the capacitor through a non-therapeutic load.
8. The method of claim 1 , wherein the voltage less than approximately seventy-five percent of the rated voltage is less than approximately fifty percent of the rated voltage.
9. The method of claim 1 , wherein the voltage less than approximately seventy-five percent of the rated voltage is less than approximately twenty percent of the rated voltage.
10. The method of claim 1 , wherein the anodic deposit is a soluble phosphate on an anode of the capacitor.
11. A method of reforming a wet-tantalum capacitor comprising:
charging the capacitor to a voltage that is less than seventy-five percent of a rated voltage for a capacitor; and
discharging the capacitor through a non-therapeutic load;
wherein the method acts to dehydrate a deposit on an anode of the capacitor to reform the capacitor using a voltage that is intended to reform the capacitor without degrading the performance life of the capacitor.
12. The method of claim 11 , wherein the charging of the capacitor is carried out automatically.
13. The method of claim 11 , wherein the step of charging the capacitor comprises maintaining the capacitor at the voltage for a time period greater than one hour.
14. The method of claim 11 , wherein the step of charging the capacitor comprises maintaining the capacitor at the voltage for a time period greater than one day.
15. The method of claim 11 , wherein the step of discharging the capacitor comprises discharging the capacitor through a leakage current.
16. The method of claim 11 , wherein the voltage is less than approximately fifty percent of the rated voltage.
17. The method of claim 11 , wherein the voltage is less than approximately twenty-five percent of the rated voltage.
18. An implantable medical device comprising:
a processor;
a power source; and
at least one wet-tantalum capacitor coupled to the power source,
wherein the processor carries out instructions to charge the capacitor to a voltage that is less than approximately seventy-five percent of a rated voltage for the capacitor and to discharge the at least one wet-tantalum capacitor such that an anodic deposit is dehydrated to reform the capacitor;
wherein the processor is configured to carry out the instructions in a manner that is intended to reform the capacitor at a relatively low voltage while not substantially adversely affecting the life of the capacitor.
19. The implantable medical device of claim 18 , wherein the capacitor is configured to be discharged by opening a circuit to allow current leakage.
20. The implantable medical device of claim 18 , wherein the capacitor is configured to be discharged by discharging through a non-therapeutic load.
21. The implantable medical device of claim 18 , wherein the processor is configured to maintain the voltage of the capacitor at a voltage that is less than approximately seventy-five percent of the rated voltage for the capacitor for more than one hour.
22. The implantable medical device of claim 18 , wherein the anodic deposit is a soluble phosphate on an anode of the capacitor.
23. The implantable medical device of claim 18 , wherein the processor is configured to maintain the voltage of the capacitor at a voltage that is less than approximately fifty percent of the rated voltage for the capacitor.
24. The implantable medical device of claim 18 , wherein the processor is configured to maintain the voltage of the capacitor at a voltage that is less than approximately twenty percent of the rated voltage for the capacitor.