Electrode paste for solar cell, solar cell using the paste, and fabrication method of the solar cell
View Patent ↗An electrode paste for a solar cell, a solar cell electrode using the paste, a solar cell having such an electrode, and a fabrication method of the solar cell are described. The paste for a solar cell electrode comprises a first component that includes silver (Ag) or a metal alloy containing the silver (Ag); a second component that includes zinc (Zn), and at least one selected from a group consisting of silicon (Si), aluminum (Al), copper (Cu), manganese (Mn), bismuth (Bi), phosphorous (P), boron (B), barium (Ba), and palladium (Pd); a leaded or lead-free glass frit; and a resin binder that is dispersed in an organic medium.
1. A solar cell comprising:
a semiconductor substrate comprising a first conductive type material;
a semiconductor layer comprising a second conductive type material formed on a front surface of the semiconductor substrate, wherein the first conductive type material is different than the second conductive type material;
an antireflective layer formed on the semiconductor layer;
a front electrode passing through the antireflective layer and contacting the semiconductor layer; and
a rear electrode formed on a rear surface of the semiconductor substrate,
wherein the depth of the semiconductor layer is 100 nm to 500 nm, and
wherein the front electrode comprises a first component including silver (Ag) and a second component including zinc (Zn) and bismuth (Bi), wherein the second component includes more bismuth (Bi) than zinc (Zn) based on wt %.
2. The solar cell according to claim 1 , wherein the first component is 75 to 95 wt % and the second component is 2.5 to 8 wt % based on the total wt % of the front electrode composition.
3. The solar cell according to claim 1 , wherein the front electrode further includes lead (Pb), and wherein silver (Ag) is 50 to 85 wt %, zinc (Zn) is 0.2 to 5 wt %, and lead (Pb) is equal to or less than 2 wt %, based on the total metal wt % of the front electrode.
4. The solar cell according to claim 1 , wherein the sheet resistance of the semiconductor layer is 60 to 1200 Ω/square.
5. The solar cell according to claim 1 , wherein the impurity concentration of the second conductive type material of the semiconductor layer is 1×10 16 to 1×10 21 atom/cm 3 .
6. The solar cell according to claim 1 , wherein the impurity concentration of the second conductive type material of the semiconductor layer has a concentration gradient from a high concentration to a lower concentration within a range of 1×10 16 to 1×10 21 atom/cm 3 as going from a front surface of the semiconductor layer to a pn junction interface between the semiconductor layer and the semiconductor substrate.
7. The solar cell according to claim 1 , wherein the composition of the front electrode is different than the composition of the rear electrode.
8. The solar cell according to claim 7 , wherein the composition of the rear electrode includes aluminum (Al) or silver (Ag).
9. The solar cell according to claim 1 , wherein the composition of the rear electrode excludes zinc (Zn).
10. The solar cell according to claim 1 , wherein a first dielectric layer is formed between the semiconductor layer and the antireflection layer and a second dielectric layer is formed between the semiconductor substrate and the rear electrode, and wherein the rear electrode passes through the second dielectric layer and makes contact with the rear surface of the semiconductor substrate.
11. The solar cell according to claim 1 , wherein the front electrode comprises Pb-free glass fit.
12. The solar cell according to claim 1 , wherein the antireflective layer comprises a plurality of layers.