Copper blend I-VII compound semiconductor light-emitting devices
View Patent ↗Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.
1. A semiconductor light-emitting device comprising:
a copper blend I-VII compound semiconductor light-emitting layer disposed between an n-type region and a p-type region;
a first barrier layer disposed between the n-type region and the I-VII compound semiconductor light-emitting layer; and
a second barrier layer disposed between the p-type region and the I-VII compound semiconductor light-emitting layer,
wherein at least one of the first barrier layer or the second barrier layer comprise a copper blend I-VII compound semiconductor material.
2. The device of claim 1 , wherein at least one of the first barrier layer or second barrier layer comprises a quaternary copper blend I-VII compound semiconductor material.
3. The device of claim 1 , wherein at least one of the first barrier layer or second barrier layer comprises a CulBrCl-type quaternary copper blend I-VII compound semiconductor material.
4. The device of claim 1 , wherein at least one of the first barrier layer or second barrier layer comprises a ternary copper blend I-VII compound semiconductor material.
5. The device of claim 1 , wherein at least one of the first barrier layer or second barrier layer comprises a CulCl-type copper blend I-VII compound semiconductor material.
6. The device of claim 1 , wherein the copper blend I-VII compound semiconductor material comprises CuCl, CuBr, Cul or combinations thereof.
7. The device of claim 1 , wherein the n-type region and/or the p-type region comprises an I-VII compound semiconductor.
8. The device of claim 1 , wherein the n-type region overlies a (111) surface of a Si substrate.
9. The device of claim 1 , further comprising a transparent electrode coupled to the p-type region.
10. The device of claim 1 , further comprising a metal electrode coupled to the n-type region.
11. The device of claim 1 , wherein at least one of the first barrier layer or the second barrier layer has a material composition adapted to cause a spontaneous polarization field and a piezoelectric polarization field in the copper blend I-VII compound semiconductor light-emitting layer to have opposite directions.
12. The device of claim 1 , wherein the copper blend I-VII compound semiconductor material comprises CuCl, CuBr, Cul or combinations thereof, wherein at least one of the first barrier layer or second barrier layer comprises a CulBrCl-type quaternary copper blend I-VII compound semiconductor material, wherein the n-type region and/or the p-type region comprises an I-VII compound semiconductor, wherein the n-type region overlies a (111) surface of a Si substrate, and wherein at least one of the first barrier layer or the second barrier layer has a material composition adapted to cause a spontaneous polarization field and a piezoelectric polarization field in the copper blend I-VII compound semiconductor light-emitting layer to have opposite directions.
13. A lamp comprising:
a lead frame;
a semiconductor light-emitting device mounted on the lead frame, the semiconductor light-emitting device comprising:
a copper blend I-VII compound semiconductor light-emitting layer disposed between an n-type region and a p-type region;
a first barrier layer disposed between the n-type region and the I-VII compound semiconductor light-emitting layer; and
a second barrier layer disposed between the p-type region and the I-VII compound semiconductor light-emitting layer,
wherein at least one of the first barrier layer or the second barrier layer comprise a copper blend I-VII compound semiconductor material.
14. The lamp of claim 13 , wherein at least one of the first barrier layer or second barrier layer comprises a CulBrCl-type quaternary copper blend I-VII compound semiconductor material.
15. The lamp of claim 13 , wherein at least one of the first barrier layer or second barrier layer comprises a CulCl-type copper blend I-VII compound semiconductor material.
16. The lamp of claim 13 , wherein at least one of the first barrier layer or the second barrier layer has a material composition adapted to cause a spontaneous polarization field and a piezoelectric polarization field in the copper blend I-VII compound semiconductor light-emitting layer to have opposite directions.
17. A system comprising:
a computing device capable of providing a user interface;
a display coupled in communication with the computing device, the display capable of displaying the user interface, the display including at least semiconductor light-emitting device, the semiconductor light-emitting device comprising:
a copper blend I-VII compound semiconductor light-emitting layer disposed between an n-type region and a p-type region;
a first barrier layer disposed between the n-type region and the I-VII compound semiconductor light-emitting layer; and
a second barrier layer disposed between the p-type region and the I-VII compound semiconductor light-emitting layer,
wherein at least one of the first barrier layer or the second barrier layer comprise a copper blend I-VII compound semiconductor material.
18. The system of claim 17 , wherein at least one of the first barrier layer or second barrier layer comprises a CulBrCl-type quaternary copper blend I-VII compound semiconductor material.
19. The system of claim 17 , wherein at least one of the first barrier layer or second barrier layer comprises a CulCl-type copper blend I-VII compound semiconductor material.
20. The system of claim 17 , wherein at least one of the first barrier layer or the second barrier layer has a material composition adapted to cause a spontaneous polarization field and a piezoelectric polarization field in the copper blend I-VII compound semiconductor light-emitting layer to have opposite directions.