Semiconductor device
View Patent ↗In a high-voltage semiconductor switching element, in addition to a first emitter region that is necessary for switching operations, a second emitter region, which is electrically connected with the first emitter region through a detection resistor in current detection means and is electrically connected with the current detection means, is formed. No emitter electrode is formed on the second emitter region, while an emitter electrode is formed on a part of a base region that is adjacent to the second emitter region.
1. A semiconductor device comprising:
a high-voltage semiconductor switching element controlled by a gate voltage applied to a gate electrode; and
a current detection unit including a detection resistor for detecting part of current flowing through the high-voltage semiconductor switching element, wherein:
the high-voltage semiconductor switching element includes:
a base region of a second conductivity type formed in a semiconductor substrate of a first conductivity type;
a first emitter/source region of the first conductivity type formed in the base region;
a first base contact region of the second conductivity type formed in the base region, and adjacent to the first emitter/source region;
a collector region of the second conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region;
a drain region of the first conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region;
a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the first emitter/source region;
a gate electrode formed on the gate insulating film;
a collector/drain electrode formed above the semiconductor substrate and electrically connected with the collector region and the drain region; and
an emitter/source electrode formed above the semiconductor substrate and electrically connected with the first base contact region and the first emitter/source region,
a second emitter/source region of the first conductivity type spaced apart from the first emitter/source region, and a second base contact region of the second conductivity type adjacent to the second emitter/source region are formed in the base region,
the second emitter/source region is electrically connected to the first emitter/source region through the detection resistor, and
the second base contact region is directly connected to the emitter source electrode.
2. The semiconductor device of claim 1 , wherein the collector region and the drain region each include a plurality of separate parts; and
each part of the collector region and each part of the drain region are located alternately so as to be in contact with each other in a direction perpendicular to a direction going from the collector region to the first emitter/source region.
3. The semiconductor device of claim 2 , wherein the second emitter/source region and the collector region are located so as to face each other with a part of the base region interposed therebetween.
4. The semiconductor device of claim 2 , wherein the second emitter/source region and the drain region are located so as to face each other with a part of the base region interposed therebetween.
5. A semiconductor device comprising:
a high-voltage semiconductor switching element controlled by a gate voltage applied to a gate electrode; and
a current detection unit including a detection resistor for detecting part of current flowing through the high-voltage semiconductor switching element, wherein:
the high-voltage semiconductor switching element includes:
a base region of a second conductivity type formed in a semiconductor substrate of a second conductivity type;
a first emitter/source region of the first conductivity type formed in the base region;
a first base contact region of the second conductivity type formed in the base region, and adjacent to the first emitter/source region;
a collector region of the second conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region;
a drain region of the first conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region;
a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the first emitter/source region;
a gate electrode formed on the gate insulating film;
a collector/drain electrode formed above the semiconductor substrate and electrically connected with the collector region and the drain region; and
an emitter/source electrode formed above the semiconductor substrate and electrically connected with the first base contact region and the first emitter/source region,
a second emitter/source region of the first conductivity type spaced apart from the first emitter/source region, and a second base contact region of the second conductivity type adjacent to the second emitter/source region are formed in the base region,
the second emitter/source electrode is electrically connected to the first emitter/source region through the detection resistor,
the second base contact region is directly connected to the emitter source electrode,
the semiconductor device further includes a drift region of the first conductivity type formed in the semiconductor substrate so as to be adjacent to the base region,
the first emitter/source region and the second emitter/source region are spaced apart from the drift region, and
the collector region and the drain region are formed in the drift region.
6. The semiconductor device of claim 5 , wherein the collector region and the drain region each include a plurality of separate parts, and
each part of the collector region and each part of the drain region are located alternately so as to be in contact with each other in a direction perpendicular to a direction going from the collector region to the first emitter/source region.
7. The semiconductor device of claim 6 , wherein the second emitter/source region and the collector region are located so as to face each other with a part of the base region interposed therebetween.
8. The semiconductor device of claim 6 , wherein the second emitter/source region and the drain region are located so as to face each other with a part of the base region interposed therebetween.
9. A semiconductor device comprising:
a high-voltage semiconductor switching element controlled by a gate voltage applied to a gate electrode; and
a current detection unit including a detection resistor for detecting part of current flowing through the high-voltage semiconductor switching element, wherein:
the high-voltage semiconductor switching element includes:
a base region of a second conductivity type formed in a semiconductor substrate of a first conductivity type;
a first emitter/source region of the first conductivity type formed in the base region;
a first base contact region of the second conductivity type formed in the base region, and adjacent to the first emitter/source region;
a collector region of the second conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region;
a drain region of the first conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region;
a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the first emitter/source region;
a gate electrode formed on the gate insulating film;
a collector/drain electrode formed above the semiconductor substrate and electrically connected with the collector region and the drain region; and
an emitter/source electrode formed above the semiconductor substrate and electrically connected with the first base contact region and the first emitter/source region,
a second emitter/source region of the first conductivity type spaced apart from the first emitter/source region, and a second base contact region of the second conductivity type adjacent to the second emitter/source region are formed in the base region,
the second emitter/source region is electrically connected to the first emitter/source region through the detection resistor, and
the second base contact region is connected to the emitter/source electrode without the detection resistor.
10. The semiconductor device of claim 9 , wherein the collector region and the drain region each include a plurality of separate parts; and
each part of the collector region and each part of the drain region are located alternately so as to be in contact with each other in a direction perpendicular to a direction going from the collector region to the first emitter/source region.
11. The semiconductor device of claim 10 , wherein the second emitter/source region and the collector region are located so as to face each other with a part of the base region interposed therebetween.
12. The semiconductor device of claim 10 , wherein the second emitter/source region and the drain region are located so as to face each other with a part of the base region interposed therebetween.
13. A semiconductor device comprising:
a high-voltage semiconductor switching element controlled by a gate voltage applied to a gate electrode; and
a current detection unit including a detection resistor for detecting part of current flowing through the high-voltage semiconductor switching element, wherein:
the high-voltage semiconductor switching element includes:
a base region of a second conductivity type formed in a semiconductor substrate of a second conductivity type;
a first emitter/source region of the first conductivity type formed in the base region;
a first base contact region of the second conductivity type formed in the base region, and adjacent to the first emitter/source region;
a collector region of the second conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region;
a drain region of the first conductivity type formed in the semiconductor substrate so as to be spaced apart from the base region;
a gate insulating film formed at least on a part of the base region located closer to the collector region with respect to the first emitter/source region;
a gate electrode formed on the gate insulating film;
a collector/drain electrode formed above the semiconductor substrate and electrically connected with the collector region and the drain region; and
an emitter/source electrode formed above the semiconductor substrate and electrically connected with the first base contact region and the first emitter/source region,
a second emitter/source region of the first conductivity type spaced apart from the first emitter/source region, and a second base contact region of the second conductivity type adjacent to the second emitter/source region are formed in the base region,
the second emitter/source region is electrically connected to the first emitter/source region through the detection resistor,
the second base contact region is connected to the emitter/source electrode without the detection resistor,
the semiconductor device further includes a drift region of the first conductivity type formed in the semiconductor substrate so as to be adjacent to the base region,
the first emitter/source region and the second emitter/source region are spaced apart from the drift region, and
the collector region and the drain region are formed in the drift region.
14. The semiconductor device of claim 13 , wherein the collector region and the drain region each include a plurality of separate parts; and
each part of the collector region and each part of the drain region are located alternately so as to be in contact with each other in a direction perpendicular to a direction going from the collector region to the first emitter/source region.
15. The semiconductor device of claim 14 , wherein the second emitter/source region and the collector region are located so as to face each other with a part of the base region interposed therebetween.
16. The semiconductor device of claim 14 , wherein the second emitter/source region and the drain region are located so as to face each other with a part of the base region interposed therebetween.