Polycrystalline diamond compact, methods of fabricating same, and applications therefor
View Patent ↗Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) comprising a polycrystalline diamond (“PCD”) table including a catalyst material therein that has been implanted with ions (e.g., carbon ions) and/or infiltrated from a host material implanted with carbon ions. In an embodiment, a PDC comprises a substrate and a PCD table bonded to the substrate. The PCD table includes a plurality of bonded diamond grains defining a plurality of interstitial regions. The PCD table includes an upper surface from which a region inwardly extends. At least a portion of the interstitial regions of the region includes a catalyst material disposed therein. At least a portion of the catalyst material may be at least saturated with carbon.
1. A method of fabricating a polycrystalline diamond compact, comprising:
implanting carbon ions into a cementing constituent of a region of a substrate; infiltrating a plurality of diamond particles with the implanted cementing constituents from the substrate; and
sintering the plurality of diamond particles in the presence of the infiltrated and implanted cementing constituent to form a polycrystalline diamond table.
2. The method of claim 1 wherein implanting carbon ions into a cementing constituent of a region of a substrate comprises implanting a dose of the carbon ions into the cementing constituent exhibiting a concentration of about 10 15 ions per cm 2 to about 10 18 ions per cm 2 .
3. The method of claim 1 wherein the substrate comprises a cemented carbide substrate including the cementing constituent therein.
4. The method of claim 1 wherein the substrate comprises titanium carbide, niobium carbide, tantalum carbide, vanadium carbide, tungsten carbide, or combinations thereof cemented with the cementing constituent, and wherein the cementing constituent comprises iron, nickel, cobalt, or alloys thereof.
5. The method of claim 1 wherein the substrate comprises an interfacial surface, and the region of the substrate extends inwardly from the interfacial surface to a depth of about 1 nm to about 1500 nm.
6. The method of claim 5 wherein the depth is about 300 nm to about 800 nm.
7. The method of claim 1 wherein implanting carbon ions into a cementing constituent of a region of a substrate comprises at least saturating the cementing constituent of the region of the substrate with the carbon ions.
8. The method of claim 1 wherein implanting carbon ions into a cementing constituent of a region of a substrate comprises supersaturating the cementing constituent of the region of the substrate with the carbon ions.
9. The method of claim 1 wherein at least a portion of the cementing constituent of the region of the substrate implanted with the carbon ions comprises carbon fibrules.
10. The method of claim 1 wherein sintering the plurality of diamond particles in the presence of the infiltrated and implanted cementing constituent to form a polycrystalline diamond table comprises subjecting the substrate and the plurality of diamond particles to a high-pressure/high-temperature process under diamond-stable conditions.
11. The method of claim 1 , further comprising implanting carbon ions into the infiltrated cementing constituent of the polycrystalline diamond table.
12. A method of fabricating a polycrystalline diamond compact, comprising:
implanting carbon ions into a cementing constituent of a region of a cemented carbide substrate;
positioning an at least partially leached polycrystalline diamond table adjacent to the region of the cemented carbide substrate implanted with the carbon ions to form an assembly;
subjecting the assembly to a high-pressure/high-temperature process; and
at least partially infiltrating the at least partially leached polycrystalline diamond table with at least some of the cementing constituent from the region of the cemented carbide substrate, in response to the high-pressure/high-temperature process, to form an at least partially infiltrated polycrystalline diamond table.
13. The method of claim 12 , further comprising at least partially removing the at least some of the cementing constituent present in the at least partially infiltrated polycrystalline diamond table.
14. The method of claim 12 , further comprising implanting carbon ions into the infiltrated cementing constituent.
15. The method of claim 12 wherein the cemented carbide substrate comprise titanium carbide, niobium carbide, tantalum carbide, vanadium carbide, tungsten carbide, or combination thereof cemented with the cementing constituent, and wherein the cementing constituent comprises iron, nickel, cobalt, or alloys thereof.
16. The method of claim 12 , wherein the cemented carbide substrate comprises an interfacial surface, and the region of the cemented carbide substrate extends inwardly from the interfacial surface to a depth of about 1 nm to about 1500 nm.
17. The method of claim 16 wherein the depth is about 300 nm to about 800 nm.
18. The method of claim 12 wherein implanting carbon ions into a cementing constituent of a region of a cemented carbide substrate comprises at least saturating the cementing constituent of the region of the cemented carbide substrate with the carbon ions.
19. The method of claim 12 wherein implanting carbon ions into a cementing constituent of a region of a cemented carbide substrate comprises supersaturating the cementing constituent of the region of the cemented carbide substrate with the carbon ions.
20. The method of claim 12 wherein at least a portion of the cementing constituent of the region of the cemented carbide substrate implanted with the carbon ions comprises carbon fibrules.