IP Library Granted Patent US 8,242,515
Granted Patent B2
US 8,242,515 · App. 12/791,173 · Granted Aug 14, 2012

Device containing non-blinking quantum dots

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Quick Facts
Patent No.
US 8,242,515
App. No.
12/791,173
Granted
Aug 14, 2012
Kind
B2
Abstract

An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

Claims (36)

1. An optoelectronic device comprising:

(a) two spaced apart electrodes; and

(b) at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition wherein there is a first lattice structure at the center of the nanocrystals and a second lattice structure different from the first lattice structure at the surface of the nanocrystals so that the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

2. An inorganic light emitting device including a plurality of independently controlled light emitting elements, wherein at least one light emitting element comprises: a first patterned electrode; a second electrode opposed to the first electrode; and a polycrystalline inorganic light emitting layer comprising ternary core/shell nanocrystals within a semiconductor matrix formed between the electrodes, wherein the ternary core/shell nanocrystals have ternary semiconductor cores containing a gradient in alloy composition wherein there is a first lattice structure at the center of the nanocrystals and a second lattice structure different from the first lattice structure at the surface of the nanocrystals and exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

3. The inorganic light emitting device of claim 2 , further including thin film electronic components formed on the substrate or a driver circuit formed externally to the substrate for independently controlling signals applied to the patterned first electrodes.

4. The inorganic light emitting device of claim 3 wherein the thin film electronic components are composed of crystalline, polycrystalline or amorphous semiconductor materials.

5. The inorganic light emitting device of claim 2 , wherein the ternary core/shell nanocrystals of each light emitting element have an emission wavelength selected from an ultraviolet, blue, cyan, green, yellow, magenta, red, or infrared emission wavelength, or a combination thereof.

6. The inorganic light emitting device of claim 2 wherein the polycrystalline inorganic light emitting layer is an annealed film of a colloidal dispersion of ternary core/shell nanocrystals and semiconductor matrix nanoparticles.

7. A single photon optoelectronic device comprising:

(a) two spaced apart electrodes; and

(b) a single ternary core/shell nanocrystal disposed between the two spaced apart electrodes and having a ternary semiconductor core containing a gradient in alloy composition wherein there is a first lattice structure at the center of the nanocrystals and a second lattice structure different from the first lattice structure at the surface of the nanocrystals and exhibiting single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

8. An optical device comprising:

(a) at least one layer containing ternary core/shell nanocrystal(s) wherein the ternary core/shell nanocrystal(s) have ternary semiconductor cores containing a gradient in alloy composition wherein there is a first lattice structure at the center of the nanocrystals and a second lattice structure different from the first lattice structure at the surface of the nanocrystals and exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns; and

(b) a light source for optically exciting the ternary core/shell nanocrystal(s) so as to cause emission of light from the ternary core/shell nanocrystal(s).

9. The optical device of claim 8 wherein the device is a single photon optical device, and wherein the at least one layer comprises a single ternary core/shell nanocrystal and the light source is a laser.

10. A system including a marker actuable by radiation and used to detect a given analyte, comprising:

(a) a ternary core/shell nanocrystal, having a ternary semiconductor core containing a gradient in alloy composition wherein there is a first lattice structure at the center of the nanocrystals and a second lattice structure different from the first lattice structure at the surface of the nanocrystals and exhibiting single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns; and

(b) a molecule conjugated with the ternary core/shell nanorystal and having a binding affinity for the analyte.

11. An optoelectronic device comprising:

(a) two spaced apart electrodes; and

(b) at least one layer containing ternary core/shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition wherein the energy gap of the core surface region is greater than the energy gap of the core center so that the ternary core/shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

12. An inorganic light emitting device including a plurality of independently controlled light emitting elements, wherein at least one light emitting element comprises: a first patterned electrode; a second electrode opposed to the first electrode; and a polycrystalline inorganic light emitting layer comprising ternary core/shell nanocrystals within a semiconductor matrix formed between the electrodes, wherein the ternary core/shell nanocrystals have ternary semiconductor cores containing a gradient in alloy composition wherein the energy gap of the core surface region is greater than the energy gap of the core center and exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

13. The inorganic light emitting device of claim 12 , further including thin film electronic components formed on the substrate or a driver circuit formed externally to the substrate for independently controlling signals applied to the patterned first electrodes.

14. The inorganic light emitting device of claim 13 wherein the thin film electronic components are composed of crystalline, polycrystalline or amorphous semiconductor materials.

15. The inorganic light emitting device of claim 12 , wherein the ternary core/shell nanocrystals of each light emitting element have an emission wavelength selected from an ultraviolet, blue, cyan, green, yellow, magenta, red, or infrared emission wavelength, or a combination thereof.

16. The inorganic light emitting device of claim 12 wherein the polycrystalline inorganic light emitting layer is an annealed film of a colloidal dispersion of ternary core/shell nanocrystals and semiconductor matrix nanoparticles.

17. A single photon optoelectronic device comprising:

(a) two spaced apart electrodes; and

(b) a single ternary core/shell nanocrystal disposed between the two spaced apart electrodes and having a ternary semiconductor core containing a gradient in alloy composition wherein the energy gap of the core surface region is greater than the energy gap of the core center and exhibiting single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

18. An optical device comprising:

(a) at least one layer containing ternary core/shell nanocrystal(s) wherein the ternary core/shell nanocrystal(s) have ternary semiconductor cores containing a gradient in alloy composition wherein the energy gap of the core surface region is greater than the energy gap of the core center and exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns; and

(b) a light source for optically exciting the ternary core/shell nanocrystal(s) so as to cause emission of light from the ternary core/shell nanocrystal(s).

19. The optical device of claim 18 wherein the device is a single photon optical device, and wherein the at least one layer comprises a single ternary core/shell nanocrystal and the light source is a laser.

20. A system including a marker actuable by radiation and used to detect a given analyte, comprising:

(a) a ternary core/shell nanocrystal, having a ternary semiconductor core containing a gradient in alloy composition wherein the energy gap of the core surface region is greater than the energy gap of the core center and exhibiting single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns; and

(b) a molecule conjugated with the ternary core/shell nanorystal and having a binding affinity for the analyte.

Assignments (12)
RELEASE OF SECURITY INTEREST Recorded Jan 24, 2020
From: BARCLAYS BANK PLC
To: EASTMAN KODAK COMPANY; FAR EAST DEVELOPMENT LTD.; FPC INC.; KODAK (NEAR EAST) INC.; KODAK AMERICAS LTD.; KODAK REALTY INC.; LASER PACIFIC MEDIA CORPORATION; QUALEX INC.; KODAK PHILIPPINES LTD.; NPEC INC.
Reel/Frame 052773/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 30, 2019
From: JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: EASTMAN KODAK COMPANY; FAR EAST DEVELOPMENT LTD.; PFC, INC.; KODAK (NEAR EAST), INC.; KODAK AMERICAS, LTD.; KODAK IMAGING NETWORK, INC.; KODAK PORTUGUESA LIMITED; KODAK REALTY, INC.; LASER PACIFIC MEDIA CORPORATION; PAKON, INC.; QUALEX, INC.; KODAK PHILIPPINES, LTD.; NPEC, INC.; CREO MANUFACTURING AMERICA LLC; KODAK AVIATION LEASING LLC
Reel/Frame 049901/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 22, 2019
From: JP MORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: QUALEX, INC.; EASTMAN KODAK COMPANY; FAR EAST DEVELOPMENT LTD.; FPC, INC.; KODAK (NEAR EAST), INC.; KODAK AMERICAS, LTD.; KODAK IMAGING NETWORK, INC.; KODAK PORTUGUESA LIMITED; KODAK REALTY, INC.; LASER PACIFIC MEDIA CORPORATION; PAKON, INC.; KODAK PHILIPPINES, LTD.; NPEC, INC.; CREO MANUFACTURING AMERICA LLC; KODAK AVIATION LEASING LLC
Reel/Frame 050239/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 8, 2018
From: EASTMAN KODAK COMPANY
To: NANOCO TECHNOLOGIES LIMITED
Reel/Frame 045143/0757 →
RELEASE OF SECURITY INTEREST Recorded Feb 1, 2017
From: JP MORGAN CHASE BANK N.A.
To: EASTMAN KODAK COMPANY
Reel/Frame 041144/0005 →
RELEASE OF SECURITY INTEREST Recorded Feb 1, 2017
From: BANK OF AMERICA, N.A.
To: EASTMAN KODAK COMPANY
Reel/Frame 041144/0090 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT (FIRST LIEN) Recorded Sep 5, 2013
From: EASTMAN KODAK COMPANY; FAR EAST DEVELOPMENT LTD.; FPC INC.; KODAK (NEAR EAST), INC.; KODAK IMAGING NETWORK, INC.; KODAK PORTUGUESA LIMITED; KODAK REALTY, INC.; LASER-PACIFIC MEDIA CORPORATION; PAKON, INC.; QUALEX INC.; KODAK PHILIPPINES, LTD.; NPEC INC.; CREO MANUFACTURING AMERICA LLC; KODAK AVIATION LEASING LLC; KODAK AMERICAS, LTD.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE
Reel/Frame 031158/0001 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT (SECOND LIEN) Recorded Sep 5, 2013
From: EASTMAN KODAK COMPANY; FAR EAST DEVELOPMENT LTD.; FPC INC.; KODAK (NEAR EAST), INC.; KODAK AMERICAS, LTD.; KODAK IMAGING NETWORK, INC.; KODAK PORTUGUESA LIMITED; KODAK REALTY, INC.; LASER-PACIFIC MEDIA CORPORATION; PAKON, INC.; QUALEX INC.; KODAK PHILIPPINES, LTD.; NPEC INC.; CREO MANUFACTURING AMERICA LLC; KODAK AVIATION LEASING LLC
To: BARCLAYS BANK PLC, AS ADMINISTRATIVE AGENT
Reel/Frame 031159/0001 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT (ABL) Recorded Sep 5, 2013
From: EASTMAN KODAK COMPANY; FAR EAST DEVELOPMENT LTD.; FPC INC.; KODAK (NEAR EAST), INC.; KODAK AMERICAS, LTD.; KODAK IMAGING NETWORK, INC.; KODAK PORTUGUESA LIMITED; KODAK REALTY, INC.; LASER-PACIFIC MEDIA CORPORATION; PAKON, INC.; QUALEX INC.; KODAK PHILIPPINES, LTD.; NPEC INC.; CREO MANUFACTURING AMERICA LLC; KODAK AVIATION LEASING LLC
To: BANK OF AMERICA N.A., AS AGENT
Reel/Frame 031162/0117 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Sep 5, 2013
From: CITICORP NORTH AMERICA, INC., AS SENIOR DIP AGENT; WILMINGTON TRUST, NATIONAL ASSOCIATION, AS JUNIOR DIP AGENT
To: EASTMAN KODAK COMPANY; PAKON, INC.
Reel/Frame 031157/0451 →
PATENT SECURITY AGREEMENT Recorded Apr 1, 2013
From: EASTMAN KODAK COMPANY; PAKON, INC.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION, AS AGENT
Reel/Frame 030122/0235 →
SECURITY INTEREST Recorded Feb 21, 2012
From: EASTMAN KODAK COMPANY; PAKON, INC.
To: CITICORP NORTH AMERICA, INC., AS AGENT
Reel/Frame 028201/0420 →