IP Library Granted Patent US 8,258,024
Granted Patent B2
US 8,258,024 · App. 12/606,284 · Granted Sep 4, 2012

Display device and method of manufacturing the same

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Quick Facts
Patent No.
US 8,258,024
App. No.
12/606,284
Granted
Sep 4, 2012
Kind
B2
Abstract

The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.

Claims (10)

1. A method of manufacturing a display device having a thin film transistor formed on a substrate including a display portion, wherein the thin film transistor is manufactured by the following steps of:

forming a gate insulating film so as to cover at least a gate electrode;

forming on top of the gate insulating film at least a polycrystalline semiconductor film, an amorphous semiconductor film, a heavily doped amorphous semiconductor film, and a metal film in sequence,

forming on the metal film a patterned photoresist;

etching only the metal film by using the patterned photoresist film as a mask to form a drain electrode and a source electrode of the thin film transistor;

forming a photoresist film on at least a channel region between the drain electrode and the source electrode;

etching the heavily doped amorphous semiconductor film, the amorphous semiconductor film, and the polycrystalline semiconductor film in sequence by using the photoresist film and the metal film as a mask;

removing the photoresist film; and

etching the heavily doped amorphous semiconductor film by using the drain electrode and the source electrode as a mask to such an extent that the amorphous semiconductor film thereunder is exposed.

2. A method of manufacturing a display device according to claim 1 , wherein the photoresist film is removed by ashing.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 30, 2018
From: PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.; JAPAN DISPLAY INC.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 046988/0801 →
COMPANY SPLIT PLAN TRANSFERRING FIFTY (50) PERCENT SHARE IN PATENT APPLICATIONS Recorded Oct 20, 2011
From: HITACHI DISPLAYS, LTD.
To: IPS ALPHA SUPPORT CO., LTD.
Reel/Frame 027092/0684 →
MERGER Recorded Oct 20, 2011
From: IPS ALPHA SUPPORT CO., LTD.
To: PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.
Reel/Frame 027093/0937 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2009
From: MATSUMURA, MIEKO; HATANO, MUTSUKO; TOYOTA, YOSHIAKI; KAITOH, TAKUO
To: HITACHI DISPLAYS, LTD.
Reel/Frame 023426/0626 →