Demultiplexer circuit for neural stimulation
A demultiplexer circuit is disclosed which can be used with a conventional neural stimulator to extend the number of electrodes which can be activated. The demultiplexer circuit, which is formed on a semiconductor substrate containing a power supply that provides all the dc electrical power for operation of the circuit, includes digital latches that receive and store addressing information from the neural stimulator one bit at a time. This addressing information is used to program one or more 1:2 N demultiplexers in the demultiplexer circuit which then route neural stimulation signals from the neural stimulator to an electrode array which is connected to the outputs of the 1:2 N demultiplexer. The demultiplexer circuit allows the number of individual electrodes in the electrode array to be increased by a factor of 2 N with N generally being in a range of 2-4.
1. A demultiplexer circuit formed on a semiconductor substrate, comprising:
a power supply having an energy storage capacitor and a bridge rectifier both formed on the semiconductor substrate, with the power supply receiving an alternating-current (ac) input voltage to generate therefrom all direct-current (dc) electrical power to operate the demultiplexer circuit;
a plurality of latches formed on the semiconductor substrate, with each latch having an ac-coupled input wherein a digital addressing signal is received one bit at a time, with each bit of the digital addressing signal being stored in that latch and provided to an output thereof until such time as a subsequent bit of the digital addressing signal is received at the ac-coupled input of that latch, the ac-coupled input to each latch:
including a coupling capacitor formed from a plurality of metal layers which are stacked up with a dielectric layer separating each adjacent pair of the metal layers; and
one of the plurality of metal layers forming a bond pad for the ac-coupled input to that latch; and
at least one 1:2 N demultiplexer formed on the semiconductor substrate, with each 1:2 N demultiplexer having a neural stimulation signal input and an integer number N of addressing inputs, and with the N addressing inputs being connected to the outputs of a set of N of the plurality of latches to receive N bits of the digital addressing signal stored in the set of N latches to program that 1:2 N demultiplexer and thereby connect the neural stimulation signal input to one of 2N outputs for that 1:2 N demultiplexer.
2. The demultiplexer circuit of claim 1 wherein a bi-phasic current signal is provided to the neural stimulation signal input of the at least one 1:2 N demultiplexer, and each output of the at least one 1:2 N demultiplexer is connected to a neural stimulation electrode.
3. The demultiplexer circuit of claim 1 wherein the bridge rectifier comprises a plurality of interconnected complementary metal-oxide semiconductor (CMOS) transistors.
4. The demultiplexer circuit of claim 1 where N is an integer number in the range of 2 to 4.
5. The demultiplexer circuit of claim 1 wherein the plurality of stacked metal layers comprises three metal layers with an upper metal layer and a lower metal layer of the three metal layers being electrically connected together to form an input side of the coupling capacitor, and with an intermediate metal layer of the three metal layers being located between the upper metal layer and the lower metal layer to form an output side of the coupling capacitor.
6. The demultiplexer circuit of claim 1 wherein a plurality of electrical vias are formed through the semiconductor substrate, with the electrical vias being connected at one end thereof to the 2N outputs of the at least one 1:2 N demultiplexer, and with an opposite end of each electrical via being electrically connectable to a neural stimulation electrode.
7. The demultiplexer circuit of claim 1 wherein each 1:2 N demultiplexer comprises a plurality of digital logic gates having inputs of the N bits of the digital addressing signal and having outputs which are connected to N transmission gates, with the outputs of the digital logic gates being used to switch one of the N transmission gates to connect the neural stimulation signal input for that 1:2 N demultiplexer to one of the 2N outputs for that 1:2 N demultiplexer.
8. A demultiplexer circuit formed on a semiconductor substrate, comprising:
a power supply having an energy storage capacitor and a bridge rectifier both formed on the semiconductor substrate, with the power supply receiving an alternating-current (ac) input voltage to generate therefrom all direct-current (dc) electrical power to operate the demultiplexer circuit;
a plurality of latches formed on the semiconductor substrate, with each latch having an ac-coupled input wherein a digital addressing signal is received one bit at a time, with each bit of the digital addressing signal being stored in that latch and provided to an output thereof until such time as a subsequent bit of the digital addressing signal is received at the ac-coupled input of that latch, each latch includes:
a reverse-biased diode connected between the input of the first pair of inverters and each power supply connection to that latch; and
another reverse-biased diode connected between the output of the first pair of inverters and each power supply connection to that latch; and
at least one 1:2 N demultiplexer formed on the semiconductor substrate, with each 1:2 N demultiplexer having a neural stimulation signal input and an integer number N of addressing inputs, and with the N addressing inputs being connected to the outputs of a set of N of the plurality of latches to receive N bits of the digital addressing signal stored in the set of N latches to program that 1:2 N demultiplexer and thereby connect the neural stimulation signal input to one of 2N outputs for that 1:2 N demultiplexer.
9. The demultiplexer circuit of claim 8 wherein a bi-phasic current signal is provided to the neural stimulation signal input of the at least one 1:2 N demultiplexer, and each output of the at least one 1:2 N demultiplexer is connected to a neural stimulation electrode.
10. The demultiplexer circuit of claim 8 wherein the bridge rectifier comprises a plurality of interconnected complementary metal-oxide semiconductor (CMOS) transistors.
11. The demultiplexer circuit of claim 8 where N is an integer number in the range of 2 to 4.
12. The demultiplexer circuit of claim 8 wherein each latch includes a reverse-biased diode connected between the input of the first pair of inverters and each power supply connection to that latch, and another reverse-biased diode connected between the output of the first pair of inverters and each power supply connection to that latch.
13. The demultiplexer of claim 12 wherein each latch includes a pair of diodes connected in series between the ac-coupled input and the output of the first pair of inverters, with the pair of diodes being connected in a cathode-to-cathode configuration or in an anode-to-anode configuration.
14. The demultiplexer circuit of claim 8 wherein a plurality of electrical vias are formed through the semiconductor substrate, with the electrical vias being connected at one end thereof to the 2N outputs of the at least one 1:2 N demultiplexer, and with an opposite end of each electrical via being electrically connectable to a neural stimulation electrode.
15. The demultiplexer of claim 8 wherein each 1:2 N demultiplexer comprises a plurality of digital logic gates having inputs of the N bits of the digital addressing signal and having outputs which are connected to N transmission gates, with the outputs of the digital logic gates being used to switch one of the N transmission gates to connect the neural stimulation signal input for that 1:2 N demultiplexer to one of the 2N outputs for that 1:2 N demultiplexer.
16. A demultiplexer circuit formed on a semiconductor substrate, comprising:
a power supply having an energy storage capacitor and a bridge rectifier both formed on the semiconductor substrate, with the power supply receiving an alternating-current (ac) input voltage to generate therefrom all direct-current (dc) electrical power to operate the demultiplexer circuit;
a plurality of latches formed on the semiconductor substrate, with each latch having an ac-coupled input wherein a digital addressing signal is received one bit at a time, with each bit of the digital addressing signal being stored in that latch and provided to an output thereof until such time as a subsequent bit of the digital addressing signal is received at the ac-coupled input of that latch; and
at least one 1:2 N demultiplexer formed on the semiconductor substrate, with each 1:2 N demultiplexer having a neural stimulation signal input and an integer number N of addressing inputs, and with the N addressing inputs being connected to the outputs of a set of N of the plurality of latches to receive N bits of the digital addressing signal stored in the set of N latches to program that 1:2 N demultiplexer and thereby connect the neural stimulation signal input to one of 2N outputs for that 1:2 N demultiplexer;
wherein the semiconductor substrate includes a silicon-on-insulator (SOI) substrate having a monocrystalline silicon base and a monocrystalline silicon layer with an oxide layer being located between the monocrystalline silicon base and the monocrystalline silicon layer.
17. The demultiplexer circuit of claim 16 wherein a bi-phasic current signal is provided to the neural stimulation signal input of the at least one 1:2 N demultiplexer, and each output of the at least one 1:2 N demultiplexer is connected to a neural stimulation electrode.
18. The demultiplexer circuit of claim 16 wherein the bridge rectifier comprises a plurality of interconnected complementary metal-oxide semiconductor (CMOS) transistors.
19. The demultiplexer circuit of claim 16 where N is an integer number in the range of 2 to 4.
20. The demultiplexer circuit of claim 16 wherein a plurality of electrical vias are formed through the semiconductor substrate, with the electrical vias being connected at one end thereof to the 2N outputs of the at least one 1:2 N demultiplexer, and with an opposite end of each electrical via being electrically connectable to a neural stimulation electrode.
21. The demultiplexer circuit of claim 16 wherein each 1:2 N demultiplexer comprises a plurality of digital logic gates having inputs of the N bits of the digital addressing signal and having outputs which are connected to N transmission gates, with the outputs of the digital logic gates being used to switch one of the N transmission gates to connect the neural stimulation signal input for that 1:2 N demultiplexer to one of the 2N outputs for that 1:2 N demultiplexer.