Method and structure of sensors or electronic devices using vertical mounting
A method and structure for fabricating sensor(s) or electronic device(s) using vertical mounting is presented. The method includes providing a substrate having a surface region and forming sensor(s) or electronic device(s) on a first region overlying the surface region. At least one bond pad structure can be formed from at least one trench structure. The resulting device can then be singulated within a vicinity of the bond pad structure(s) to form at least one integrated sensor or electronic devices having at least one vertical bond pad. At least one singulated device(s) can be coupled to a package, having a package surface region, such that the vertical bond pad(s) are configured horizontally, and at least one interconnection can be formed between the vertical bond pad(s) and at least one portion of the package surface region.
1. A method for fabricating an integrated device, the method comprising:
providing a substrate having a surface region;
forming at least one integrated device provided on a first region overlying the surface region, the at least one integrated device having at least one contact region, the first region having a first surface region, the at least one integrated device including one or more sensors and/or one or more electronic devices;
forming at least one trench structure within at least one portion of the first region;
forming a dielectric material overlying the first region and the at least one trench structure;
removing at least one portion of the dielectric material within a vicinity of the at least one contact region;
forming a conduction material overlying the dielectric material, the at least one trench structure, and the at least one contact region;
removing at least one portion of the conduction material within a vicinity of the at least one contact region and the at least one trench structure to form at least one bonding structure;
singulating the resulting device within a vicinity of the at least one bonding structure to form at least one singulated integrated device having at least one vertical bond pad;
coupling the at least one singulated integrated device to a package, the package having a package surface region, the at least one singulated device being coupled to the package surface region such that the at least one vertical bond pad is configured horizontally; and
forming at least one interconnection between the at least one vertical bond pad and at least a portion of the package surface region.
2. The method of claim 1 wherein the at least one integrated device comprises a nickel-iron material.
3. The method of claim 1 wherein the electronic devices comprise CMOS integrated circuit devices.
4. The method of claim 1 wherein the sensors comprise MEMS devices.
5. The method of claim 1 wherein the sensors comprise magnetoresistance devices.
6. The method of claim 5 wherein the magnetoresistance devices comprise anisotropic magnetoresistance (AMR), ordinary magnetoresistance (OMR), giant magnetoresistance (GMR), or tunnel junction magneto resistance (TMR) devices.
7. The method of claim 1 wherein the at least one trench structure is formed from a wet etching, dry etching, deep reactive-ion etching (DRIE), or mechanical process.
8. The method of claim 1 wherein the removing of at least one portion of the dielectric material and the removing of at least one portion of the conduction material comprise a wet etching, dry etching, or mechanical process.
9. The method of claim 1 wherein the singulating of the resulting device comprises a dicing, an etching, or a laser scribing process.
10. The method of claim 1 wherein the package is a substrate package or a lead frame package.
11. The method of claim 1 wherein the at least one interconnection is formed via a wire bonding process.
12. A method for fabricating an integrated device, the method comprising:
providing a substrate having a surface region;
forming at least one integrated device provided on a first region overlying the surface region, the at least one integrated device having at least one contact region, the first region having a first surface region, the at least one integrated device including one or more sensors and/or one or more electronic devices;
forming at least one trench structure within at least one portion of the first region, the at least one trench structure being formed via a deep reactive-ion etching (DRIE) process, the trench sidewalls having slopes greater than 90 degrees;
forming a dielectric material overlying the first region and the at least one trench structure;
removing at least one portion of the dielectric material within a vicinity of the at least one contact region;
forming a conduction material overlying the dielectric material, the at least one trench structure, and the at least one contact region;
removing at least one portion of the conduction material within a vicinity of the at least one contact region and the at least one trench structure to form at least one bonding structure;
singulating the resulting device within a vicinity of the at least one bonding structure to form at least one singulated integrated device having at least one vertical bond pad;
coupling the at least one singulated integrated device to a package, the package having a package surface region, the at least one singulated device being rotated 90 degrees and being coupled to the package surface region such that the at least one vertical bond pad is configured horizontally;
forming at least one interconnection between the at least one vertical bond pad and at least a portion of the package surface region; and
forming an encapsulation overlying the at least one singulated integrated device, the at least one interconnection, and the package.
13. The method of claim 12 wherein the at least one integrated device comprises a nickel-iron material.
14. The method of claim 12 wherein the electronic devices comprise CMOS integrated circuit devices.
15. The method of claim 12 wherein the sensors comprise MEMS devices.
16. The method of claim 12 wherein the sensors comprise magnetoresistance devices.
17. The method of claim 16 wherein the magnetoresistance devices comprise anisotropic magnetoresistance (AMR), ordinary magnetoresistance (OMR), giant magnetoresistance (GMR), or tunnel junction magnetoresistance (TMR) devices.
18. The method of claim 12 wherein the at least one trench structure is formed from a wet etching, dry etching, deep reactive-ion etching (DRIE), or mechanical process.
19. The method of claim 12 wherein the removing of at least one portion of the dielectric material and the removing of at least one portion of the conduction material comprise a wet etching, dry etching, or mechanical process.
20. The method of claim 12 wherein the singulating of the resulting device comprises a dicing, an etching, or a laser scribing process.
21. The method of claim 12 wherein the package is a substrate package or a lead frame package.
22. The method of claim 12 wherein the at least one interconnection is formed via a wire bonding process.