IP Library Granted Patent US 8,603,575
Granted Patent B1
US 8,603,575 · App. 13/267,867 · Granted Dec 10, 2013

Thin-film absorber formation method

Inventor: Sam Kao (Los Altos, CA)
Assignee: Nanosolar, Inc.
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Quick Facts
Patent No.
US 8,603,575
App. No.
13/267,867
Granted
Dec 10, 2013
Kind
B1
Abstract

A thin-film absorber formation method includes: operating a furnace having an internal atmosphere containing a process gas; loading process gas material into a source container that is part of a system configured to provide process gas to the furnace, wherein loading of the source container occurs without exposing the internal atmosphere of the furnace to external atmosphere present in the source container by solidifying process gas material to form a gas tight seal to separate the source container from the furnace, wherein the seal is formed before the source container is opened for loading and external atmosphere enters the source container, including a pathway configured to retain process gas material in a section of the pathway to solidify and create the seal.

Claims (29)

1. A thin-film absorber formation method comprising:

operating a furnace having an internal atmosphere containing a process gas;

loading process gas material into a source container that is part of a system configured to provide process gas to the furnace,

wherein loading of the source container occurs without exposing the internal atmosphere of the furnace to external atmosphere present in the source container by solidifying process gas material to form a gas tight seal to separate the source container from the furnace, wherein the seal is formed before the source container is opened for loading and external atmosphere enters the source container,

the system comprising a shaped pathway configured to retain process gas material in a section of the pathway to solidify and create the seal.

2. The method of claim 1 comprising:

purging the external atmosphere from the source container;

liquefying the process gas material forming the gas tight seal to re-open a fluid pathway leading to the furnace.

3. The method of claim 1 wherein the process gas material is in solid form when loaded into the source container.

4. The method of claim 1 wherein the source container is coupled to a system that converts process gas material to a vapor which is then transported to the furnace.

5. The method of claim 1 comprising continuing to process a workpiece in the furnace while simultaneously loading process gas material into the source container, wherein such loading of the source container does not interrupt the furnace from processing the work piece.

6. The method of claim 1 comprising retaining process gas material in a trap portion downstream from the source container to form the seal when the process gas material is solidified.

7. The method of claim 1 wherein the process gas material solidified in the pathway has an effective amount of pathway-to-solid material contact surface to form a gas tight seal.

8. The method of claim 1 wherein the source container includes heaters for liquefying the process gas material.

9. The method of claim 1 wherein the process gas is corrosive to polymers.

10. The method of claim 1 comprising forming the gas seal without using any other means, except for solidifying process gas material in a fluid pathway leading away from the source container.

11. The method of claim 1 comprising forming the gas seal without using a mechanical valve.

12. A thin-film absorber formation method comprising:

operating a furnace having an internal atmosphere containing a process gas;

loading process gas material into a source container that is part of a system configured to provide process gas to the furnace,

wherein loading of the source container occurs without exposing the internal atmosphere of the furnace to external atmosphere present in the source container by solidifying process gas material to form a gas tight seal to separate the source container from the furnace, wherein the seal is formed before the source container is opened for loading and external atmosphere enters the source container; and

flowing material downward from the source container into a pathway having a first portion and a second portion, wherein the second portion is configure to provide resistance to flow out from the first portion, thus retaining process gas material in the first portion to solidify and form the seal.

13. The method of claim 12 wherein the second portion is angled to direct flow against gravity.

14. The method of claim 12 wherein the second portion is shaped to retain process gas material in the first portion.

15. A thin-film absorber formation method comprising:

operating a furnace having an internal atmosphere containing a process gas;

loading process gas material into a source container that is part of a system configured to provide process gas to the furnace,

wherein loading of the source container occurs without exposing the internal atmosphere of the furnace to external atmosphere present in the source container by solidifying process gas material to form a gas tight seal to separate the source container from the furnace, wherein the seal is formed before the source container is opened for loading and external atmosphere enters the source container,

where the source container further comprising heaters in downstream pathway for liquefying the process gas material forming the gas tight seal to re-open a fluid pathway leading away from the source container.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 21, 2014
From: NANOSOLAR, INC.
To: AERIS CAPITAL SUSTAINABLE IP LTD.
Reel/Frame 032502/0206 →
SECURITY AGREE,EMT Recorded Nov 15, 2012
From: NANOSOLAR, INC.
To: AERIS CAPITAL SUSTAINABLE IMPACT PRIVATE INVESTMENT FUND CAYMAN L.P.
Reel/Frame 029556/0418 →
Continuity (1)
Provisional Application 61390610 · Oct 6, 2010