Nitride-type semiconductor element and process for production thereof
View Patent ↗A nitride-based semiconductor device includes a p-type Al d Ga e N layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type Al d Ga e N layer 25 . The Al d Ga e N layer 25 includes a p-Al d Ga e N contact layer 26 that is made of an Al x Ga y In z N (x+y+z=1, x≧0, y>0, z≧0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-Al d Ga e N contact layer 26 includes a body region 26 A which contains Mg of not less than 4×10 19 cm −3 and not more than 2×10 20 cm −3 and a high concentration region 26 B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×10 21 cm −3 .
1. A nitride-based semiconductor device, comprising:
a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a growing plane of the p-type semiconductor region being an m-plane; and
an electrode that is provided on the p-type semiconductor region,
wherein the p-type semiconductor region includes a contact layer which is made of an Al x Ga y In z N (x+y+z=1, x≧0, y≧0, z≧0) semiconductor, the contact layer having a thickness of not less than 26 nm and not more than 60 nm,
the contact layer includes a body layer which contains Mg of not less than 4×10 19 cm −3 and not more than 2×10 20 cm −3 and a high-concentration layer which is in contact with the electrode and which has a Mg concentration of not less than 1×10 21 cm −3 ,
the high-concentration layer has a thickness of not less than 0.5 nm and not more than 5 nm, and
a magnesium layer is deposited on a surface of the high-concentration layer.
2. The nitride-based semiconductor device of claim 1 , wherein the contact layer includes a transition region between the body layer and the high-concentration layer, the transition region containing Mg at a concentration which is higher than 2×10 20 cm −3 and lower than 1×10 21 cm −3 .
3. The nitride-based semiconductor device of claim 1 , wherein the body layer contains Mg of not less than 4×10 19 cm −3 and not more than 1×10 20 cm −3 .
4. The nitride-based semiconductor device of claim 1 , wherein part of the electrode which is in contact with the high-concentration layer is a first layer which contains at least any one of Mg, Zn, and Ag.
5. The nitride-based semiconductor device of claim 4 , wherein the electrode includes a second layer provided on the first layer.
6. The nitride-based semiconductor device of claim 5 , wherein the second layer is made of at least one metal selected from a group consisting of Ag, Pt, Mo, and Pd.
7. The nitride-based semiconductor device of claim 4 , wherein the first layer is in a form of islands.
8. The nitride-based semiconductor device of claim 1 , wherein the electrode is a Ag layer.
9. The nitride-based semiconductor device of claim 1 , wherein the p-type semiconductor region further includes a p-type semiconductor layer which is made of an Al x Ga y In z N (x+y+z=1, x≧0, y≧0, z≧0) semiconductor that contains Mg of not less than 1×10 18 cm −3 and not more than 1×10 19 cm −3 .
10. The nitride-based semiconductor device of claim 9 , wherein the thickness of the p-type semiconductor region is not less than 100 nm and not more than 500 nm.
11. A light source, comprising:
a nitride-based semiconductor light-emitting device according to claim 1 ; and
a wavelength conversion section including a phosphoric material that converts a wavelength of light emitted from the nitride-based semiconductor light-emitting device.
12. The light source of claim 11 , wherein the contact layer includes a transition region between the body layer and the high-concentration layer, the transition region containing Mg at a concentration which is higher than 2×10 20 cm −3 and lower than 1×10 21 cm −3 .
13. The light source of claim 11 , wherein the body layer contains Mg of not less than 4×10 19 cm −3 and not more than 1×10 20 cm −3 .