Etch-selective bonding layer for hybrid photonic devices
“Hybrid photonic devices” describe devices wherein the optical portion—i.e., the optical mode, comprises both the silicon and III-V semiconductor regions, and thus the refractive index of the semiconductor materials and the refractive index of the bonding layer region directly effects the optical function of the device. Prior art devices utilize an optically compliant layer that is the same material as the III-V substrate; however, during the final sub-process of the bonding process, the substrates must be removed by acids. These acids can etch into the bonding layer, causing imperfections to propagate at the interface of the bonded material, adversely affecting the optical mode shape and propagation loss of the device. Embodiments of the invention utilize a semiconductor etch-selective bonding layer that is not affected by the final stages of the bonding process (e.g., substrate removal), and thus protects the bonding interface layer from being affected.
1. An apparatus comprising:
a first semiconductor slab comprising a silicon material;
a second semiconductor slab comprising a III-V material, above and partially overlapping the first semiconductor slab to create a lateral overlap region;
an etch-selective bonding layer formed on the second semiconductor slab and formed from a material related to the III-V material of the second semiconductor slab;
a bonding interface layer formed on the etch-selective bonding layer to enable the second semiconductor slab to be bonded to the first semiconductor slab at the lateral overlap region, the bonding interface layer comprising a material with a refractive index of at least 2.0; and
an optical waveguide included in the lateral overlap region and comprising the silicon semiconductor material, the III-V semiconductor material, the etch-selective bonding layer and the bonding interface layer.
2. The apparatus of claim 1 , wherein the bonding interface layer further comprises a material epitaxially deposited on the etch-selective bonding layer.
3. The apparatus of claim 1 , wherein the III-V material comprises Indium Phosphide (InP).
4. The apparatus of claim 3 , wherein the etch-selective bonding layer comprises a material including InP.
5. The apparatus of claim 4 , wherein the bonding interface layer comprises Indium Gallium Phosphide (InGaP).
6. The apparatus of claim 1 , the first semiconductor slab to include a first oxide layer, the second semiconductor slab to include a second oxide layer formed over the bonding interface layer, wherein the first and second semiconductor slabs are bonded at their oxide layers.
7. A method comprising:
forming an etch-selective bonding layer on a III-V semiconductor region, the bonding layer comprising a material related to the material of the III-V semiconductor region;
forming a bonding interface layer on the III-V semiconductor region, the bonding interface layer comprising a material with a refractive index of at least 2.0;
bonding a silicon semiconductor region to the III-V semiconductor region at the bonding interface layer, the III-V semiconductor region above and partially overlapping the silicon semiconductor region to create a lateral overlap region, wherein an optical waveguide is included in the lateral overlap region and comprises the silicon semiconductor material, the III-V semiconductor material, the etch-selective bonding layer and the bonding interface layer.
8. The method of claim 7 , wherein forming the bonding interface layer comprises epitaxially depositing the material of the etch-selective bonding layer on the III-V semiconductor region.
9. The method of claim 7 , wherein the III-V material comprises Indium Phosphide (InP).
10. The method of claim 9 , wherein the etch-selective bonding layer comprises a material including InP.
11. The method of claim 10 , wherein the bonding interface layer comprises Indium Gallium Phosphide (InGaP).
12. The method of claim 7 , wherein bonding the silicon semiconductor region to the III-V semiconductor region at the bonding interface layer comprises:
subjecting the III-V semiconductor region and the bonding interface layer to an oxygen plasma to form a first oxide layer; and
subjecting the silicon semiconductor region to the oxygen plasma to form a second oxide layer;
wherein bonding the silicon semiconductor region to the III-V semiconductor region at the bonding interface layer includes bonding the first and second oxide layers.
13. A system comprising:
a light source;
a modulator to receive light from the light source; and
a transmission medium to operatively couple the light source and the modulator; wherein at least one of the light source and the modulator includes an optical device comprising:
a first semiconductor slab comprising a silicon material;
a second semiconductor slab, comprising a III-V material, above and partially overlapping the first semiconductor slab to create a lateral overlap region;
an etch-selective bonding layer formed on the second semiconductor slab and formed from a material related to the III-V material of the second semiconductor slab;
a bonding interface layer formed on the etch-selective bonding layer to enable the second semiconductor slab to be bonded to the first semiconductor slab at the lateral overlap region, the bonding interface layer comprising a material with a refractive index of at least 2.0; and
an optical waveguide included in the lateral overlap region and comprising the silicon semiconductor material, the III-V semiconductor material, the etch-selective bonding layer and the bonding interface layer.
14. The system of claim 13 , wherein the bonding interface layer is further comprises a material epitaxially deposited on the etch-selective bonding layer.
15. The system of claim 13 , wherein the III-V material comprises Indium Phosphide (InP).
16. The system of claim 15 , wherein the etch-selective bonding layer comprises a material including InP.
17. The system of claim 16 , wherein the bonding interface layer comprises Indium Gallium Phosphide (InGaP).
18. The system of claim 13 , the first semiconductor slab to include a first oxide layer, the second semiconductor slab to include a second oxide layer formed over the bonding interface layer, wherein the first and second semiconductor slabs are bonded at their oxide layers.