Solid-state imaging device, method for manufacturing the same, and electronic apparatus
View Patent ↗A method for manufacturing a solid-state imaging device includes: forming pixels that receive incident light in a pixel array area of a substrate; forming pad electrodes in a peripheral area located around the pixel array area of the substrate; forming a carbon-based inorganic film on an upper surface of each of the pad electrodes including a connection surface electrically connected to an external component; forming a coated film that covers upper surfaces of the carbon-based inorganic films; and forming an opening above the connection surface of each of the pad electrodes to expose the connection surface.
1. A solid-state imaging device comprising:
a pad electrode, a sidewall of the pad electrode extending from a first surface of the pad electrode to a second surface of the pad electrode;
a carbon-based inorganic film between a passivation film and said pad electrode, said carbon-based inorganic film physically isolating said passivation film from said first surface of the pad electrode;
a multilayer wiring layer between a semiconductor substrate and said pad electrode, a portion of the passivation film touching said sidewall of the pad electrode and a surface of the multilayer wiring layer.
2. The solid-state imaging device according to claim 1 , wherein said surface of the multilayer wiring layer touches said second surface of the pad electrode.
3. The solid-state imaging device according to claim 2 , wherein said portion of the passivation film extends from a surface of the carbon-based inorganic film to said surface of the multilayer wiring layer.
4. The solid-state imaging device according to claim 1 , wherein said pad electrode is an electrically-conductive material.
5. The solid-state imaging device according to claim 1 , wherein said carbon-based inorganic film is an inorganic material that contains carbon.
6. The solid-state imaging device according to claim 1 , wherein said carbon-based inorganic film is a material from the group consisting of graphite, graphene, carbon nanotubes, diamond-like carbon, and amorphous carbon.
7. The solid-state imaging device according to claim 1 , wherein said passivation film is an electrical insulator.
8. The solid-state imaging device according to claim 1 , wherein said passivation film includes a silicon oxide.
9. The solid-state imaging device according to claim 1 , wherein said passivation film includes a silicon nitride.
10. The solid-state imaging device according to claim 1 , further comprising:
an opening through said passivation film and said carbon-based inorganic film, an electrically-conductive member within said opening touching said first surface of the pad electrode.
11. The solid-state imaging device according to claim 10 , wherein said opening terminates at said first surface of the pad electrode.
12. The solid-state imaging device according to claim 10 , further comprising:
a wire directly electrically connected to said electrically-conductive member.
13. The solid-state imaging device according to claim 1 , further comprising:
an on-chip lens between an antireflection film and a photodiode region of the semiconductor substrate, a refractive index of the antireflection film being lower than a refractive index of the on-chip lens.
14. The solid-state imaging device according to claim 13 , wherein said on-chip lens is an organic material.
15. The solid-state imaging device according to claim 13 , wherein said on-chip lens is a resin.
16. The solid-state imaging device according to claim 13 , further comprising:
a planarization film between said passivation film and said on-chip lens.
17. The solid-state imaging device according to claim 16 , wherein said planarization film is an organic material.
18. The solid-state imaging device according to claim 16 , wherein said planarization film is a resin.
19. The solid-state imaging device according to claim 16 , further comprising:
a color filter between said on-chip lens and said planarization film.
20. An electronic apparatus comprising:
the solid-state imaging device according to claim 1 ;
an optical system configured to direct incident light onto said solid-state imaging device;
a signal processing circuit unit configured to convert a signal charge into digital information,
wherein said solid-state imaging device is configured to convert said incident light into said signal charge.