Write pole formed with evaporation deposition
A write pole may be formed by first depositing a dielectric layer onto a substrate and then patterning the dielectric layer to form a trench with a write pole shape. The trench is subsequently filled with the evaporation deposition of a magnetic material to form a write pole. The trench may have a greater depth dimension than width dimension.
1. An apparatus comprising a trench defining a write pole shape, the trench continuously extending a first depth to a substrate, having a varying width along the first depth, and filled with a magnetic material via evaporation deposition.
2. The apparatus of claim 1 , wherein the trench is a damascene trench.
3. The apparatus of claim 1 , wherein the magnetic material positioned within the trench is void-less.
4. The apparatus of claim 1 , wherein the trench has a uniform width of 10 nm or less.
5. The apparatus of claim 1 , wherein the trench continuously extends a first depth to a substrate, the trench having a symmetrical shape along the first depth.
6. The apparatus of claim 1 , wherein the trench continuously extends a first depth to a substrate, the trench forming a trapezoidal shape along the first depth.
7. The apparatus of claim 1 , wherein the trench continuously extends a first depth to a substrate, the trench comprising at least one sidewall angled at 75-90° relative to the substrate.
8. A method comprising:
depositing a dielectric layer onto a substrate;
patterning the dielectric layer to form a trench with a write pole shape; and
filling the trench with a magnetic material with evaporation deposition to form a write pole.
9. The method of claim 8 , wherein the magnetic material comprises FeCo.
10. The method of claim 8 , wherein the evaporation deposition collimates the magnetic material.
11. The method of claim 8 , wherein the magnetic material is electrodeposited in combination with the evaporation deposition.
12. The method of claim 8 , wherein the magnetic material has 25 Oe coercivity in the trench.
13. The method of claim 8 , wherein the magnetic material is annealed at an elevated temperature after being deposited in the trench.
14. The method of claim 8 , wherein the trench is coated with a continuous seed film prior to being filled with the magnetic material.
15. A method comprising:
depositing a dielectric layer onto a substrate;
patterning the dielectric layer to form a trench with a write pole shape;
filling the trench with a magnetic material with evaporation deposition to form a write pole;
removing portions of the dielectric layer; and
forming at least one shield on the substrate adjacent the write pole.
16. The method of claim 15 , wherein the portions of the dielectric layer are removed to form a planar surface continuously extending across the trench.
17. The apparatus of claim 15 , wherein the evaporation deposition is conducted in multiple stages.
18. The apparatus of claim 15 , wherein the trench has a greater depth than width.
19. The apparatus of claim 15 , wherein the magnetic material completely fills the trench and continuously extends beyond a depth and width of the trench.
20. The apparatus of claim 15 , wherein the trench has a plurality of sidewalls each oriented perpendicular to the substrate.