Millimetre wave bandpass filter on CMOS

1. A method of fabricating a monolithic millimeter wave resonant device upon a conductive substrate, the method comprising:

forming high impedance elements upon the conductive substrate; and

forming resonant elements of the resonant device over the high impedance elements;

wherein the high impedance elements comprise a high impedance shielding layer directly beneath a slotted ground plane of the resonant elements;

wherein the high impedance shielding layer comprises an inner portion designed to reduce coupling of the resonant elements to the conductive substrate and to reduce induced eddy currents in the conductive substrate;

wherein the high impedance shielding layer comprises an outer ring designed to reduce coupling of the resonant elements through the conductive substrate with other resonant elements of the resonant device.

2. The method of claim 1 wherein the ground plane is fabricated on a bottom thin copper metal layer of a 0.13 um standard CMOS process, and wherein other portions of the resonant elements are formed on a top RF aluminum metal layer of the standard CMOS process.

3. The method of claim 1 wherein the resonant device comprises a RF filter.

4. The method of claim 1 wherein the conductive substrate is divided into uncoupled regions and a high resistive element is inserted between the uncoupled regions.

5. A monolithic millimeter wave resonant device, comprising:

a conductive substrate;

high impedance elements formed upon the conductive substrate; and

resonant elements formed over the high impedance elements;

wherein the high impedance elements comprise a high impedance shielding layer directly beneath a slotted ground plane of the resonant elements;

wherein the high impedance shielding layer comprises an inner portion designed to reduce coupling of the resonant elements to the conductive substrate and to reduce induced eddy currents in the conductive substrate;

wherein the high impedance shielding layer comprises an outer ring designed to reduce coupling of the resonant elements through the conductive substrate with other resonant elements of the resonant device.

6. The resonant device of claim 5 wherein the ground plane is fabricated on a bottom thin copper metal layer of a 0.13 um standard CMOS process, and wherein other portions of the resonant elements are formed on a top RF aluminum metal layer of the standard CMOS process.

7. The resonant device of claim 5 wherein the resonant device comprises a RF filter.

8. The resonant device of claim 5 wherein the conductive substrate is divided into uncoupled regions and a high resistive element is inserted between the uncoupled regions.

9. A meandering hairpin resonator for a monolithic millimeter wave resonant device, the resonator formed of a longitudinal conducting strip comprising:

a substantially straight primary strip portion

two secondary strip portions extending from respective ends of the primary strip portion and at substantially 90 degrees to the primary strip portion, each secondary strip portion comprising a resonating portion for resonating with a proximal resonator, the two resonating portions being spaced apart by a distance less than a length of the primary strip portion;

wherein each secondary strip portion comprises a dogleg bend causing a longitudinal outer edge and a longitudinal inner edge of a distal portion of the secondary strip portion to be positioned closer to the other secondary strip portion such that an average spacing between the longitudinal outer edges of the two distal portions is less than the length of the primary strip portion and an average spacing between the longitudinal inner edges of the two distal portions is less than the length of the primary strip portion;

wherein a spacing between the longitudinal inner edges of the distal portions of the two secondary strip portions is sufficient to accommodate substantially all of a step impedance miniature hairpin resonator between the longitudinal inner edges of the distal portions of the two secondary strip portions.

10. The meandering hairpin resonator of claim 9 wherein corners formed by the conducting strip are mitered and chamfered to minimize losses.

11. A 4th order cross coupled filter comprising:

a first meandering hairpin resonator in accordance with claim 9 ;

a second meandering hairpin resonator in accordance with claim 9 ;

a first step impedance miniature hairpin resonator;

a second step impedance miniature hairpin resonator;

wherein substantially all of the first step impedance miniature hairpin resonator is positioned in the spacing between the longitudinal inner edges of the distal portions of the two secondary strip portions of the first meandering hairpin resonator; and

wherein substantially all of the second step impedance miniature hairpin resonator is positioned in the spacing between the longitudinal inner edges of the distal portions of the two secondary strip portions of the second meandering hairpin resonator.

12. The meandering hairpin resonator of claim 9 wherein:

the length of the primary strip portion is substantially 461.2 μm,

a length of each secondary strip portion is substantially 335.2 μm,

the spacing between the distal portions of the two secondary strip portions is substantially 341.2 μm, and

a length of the distal portion of each secondary strip portion is substantially 221.4 μm.

13. A method of fabricating a meandering hairpin resonator formed of a longitudinal conducting strip, the method comprising:

forming a substantially straight primary strip portion; and

forming two secondary strip portions extending from respective ends of the primary strip portion and at substantially 90 degrees to the primary strip portion, each secondary strip portion comprising a resonating portion for resonating with a proximal resonator, the two resonating portions being spaced apart by a distance less than a length of the primary strip portion;

wherein each secondary strip portion comprises a dogleg bend causing a longitudinal outer edge and a longitudinal inner edge of a distal portion of the secondary strip portion to be positioned closer to the other secondary strip portion such that an average spacing between the longitudinal outer edges of the two distal portions is less than the length of the primary strip portion and an average spacing between the longitudinal inner edges of the two distal portions is less than the length of the primary strip portion;

wherein a spacing between the longitudinal inner edges of the distal portions of the two secondary strip portions is sufficient to accommodate substantially all of a step impedance miniature hairpin resonator between the longitudinal inner edges of the distal portions of the two secondary strip portions.

14. The method of claim 13 wherein:

the length of the primary strip portion is substantially 461.2 μm,

a length of each secondary strip portion is substantially 335.2 μm,

the spacing between the distal portions of the two secondary strip portions is substantially 341.2 μm, and

a length of the distal portion of each secondary strip portion is substantially 221.4 μm.

15. A 4th order cross coupled filter comprising:

a first meandering hairpin resonator fabricated in accordance with the method of claim 13 ;

a second meandering hairpin resonator fabricated in accordance with the method of claim 13 ;

a first step impedance miniature hairpin resonator;

a second step impedance miniature hairpin resonator;

wherein substantially all of the first step impedance miniature hairpin resonator is positioned in the spacing between the longitudinal inner edges of the distal portions of the two secondary strip portions of the first meandering hairpin resonator; and

wherein substantially all of the second step impedance miniature hairpin resonator is positioned in the spacing between the longitudinal inner edges of the distal portions of the two secondary strip portions of the second meandering hairpin resonator.