Magnetoresistive structures with stressed layer
A method of making a magnetoresistive structure is disclosed. The method includes forming a pillar structure including a magnetic tunnel junction on a substrate that includes a first electrode, depositing a stressed layer onto a pillar structure sidewall, and depositing a second electrode above the magnetic tunnel junction.
1. A magnetorestrictive structure, comprising
a pillar structure comprising a magnetic tunnel junction that comprises a reference magnetic layer, a tunnel barrier layer, and a free magnetic layer, and a hard mask layer above the magnetic tunnel junction, the pillar structure disposed on a substrate comprising a first electrode wherein the pillar structure further comprises an electrically non-conductive sidewall layer over the magnetic tunnel junction;
an interlayer dielectric around the pillar structure and a trench in the interlayer dielectric adjacent to a sidewall of the pillar structure;
a stressed electrically conductive layer on the sidewall of the pillar structure, wherein the stressed electrically conductive layer covers and extends below the hard mask layer without covering a side of the magnetic tunnel junction, the stressed electrically conductive layer being in direct contact with sides of the electrically non-conductive sidewall layer; and
a second electrode disposed in the trench and above the hard mask layer.
2. The structure of claim 1 , wherein the pillar structure further comprises one or more electrically conductive layers between the magnetic tunnel junction and the hard mask layer.
3. The structure of claim 1 , wherein the stressed electrically conductive layer covers the electrically non-conductive sidewall layer over the magnetic tunnel junction.
4. The structure of claim 1 , wherein the stressed electrically conductive layer comprises a layer comprising tantalum nitride and a layer comprising beta phase tantalum.
5. The structure of claim 1 , wherein the stressed electrically conductive layer has a residual stress of at least 200 MPa.
6. The structure of claim 1 , wherein the stressed electrically conductive layer has a residual stress of 200 MPa to 2 GPa.
7. The structure of claim 1 , wherein the stressed electrically conductive layer comprises a metallic layer.
8. The structure of claim 7 , wherein the stressed electrically conductive layer comprises tantalum nitride or beta phase tantalum.
9. A magnetorestrictive structure, comprising
a pillar structure comprising a magnetic tunnel junction that comprises a reference magnetic layer, a tunnel barrier layer, and a free magnetic layer, and a hard mask layer above the magnetic tunnel junction, the pillar structure disposed on a substrate comprising a first electrode;
an interlayer dielectric around the pillar structure and a trench in the interlayer dielectric adjacent to a sidewall of the pillar structure;
an electrically non-conductive sidewall layer on the sidewall of the pillar structure;
a stressed electrically conductive layer on the electrically non-conductive sidewall layer, wherein the stressed electrically conductive layer covers entire sides of the electrically non-conductive sidewall layer and covers a top of the hard mask layer; and
a second electrode disposed in the trench and above the hard mask layer.
10. The structure of claim 9 , wherein the pillar structure further comprises one or more electrically conductive layers between the magnetic tunnel junction and the hard mask layer.
11. The structure of claim 9 , wherein the stressed electrically conductive layer covers and extends below the hard mask layer.
12. The structure of claim 11 , wherein the electrically non-conductive sidewall on the sidewall of over the magnetic tunnel junction.
13. The structure of claim 12 , wherein the stressed electrically conductive layer covers the electrically non-conductive sidewall layer on the sidewall of over the magnetic tunnel junction such that the electrically non-conductive sidewall layer electrically protects the magnetic tunnel junction from the stressed electrically conductive layer.
14. The structure of claim 9 , wherein the stressed electrically conductive layer comprises a layer comprising tantalum nitride and a layer comprising beta phase tantalum.
15. The structure of claim 9 , wherein the stressed electrically conductive layer has a residual stress of at least 200 MPa.
16. The structure of claim 9 , wherein the stressed electrically conductive layer has a residual stress of 200 MPa to 2 GPa.
17. The structure of claim 9 , wherein the stressed electrically conductive layer comprises a metallic layer.
18. The structure of claim 17 , wherein the stressed electrically conductive layer comprises tantalum nitride or beta phase tantalum.