Process for forming a layer of equiaxed titanium nitride and a MOSFET device having a metal gate electrode including a layer of equiaxed titanium nitride
Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.
1. A method, comprising:
depositing a gate oxide layer over a substrate;
depositing a work function metal nitride layer over the gate oxide layer;
depositing a gate electrode layer over the work function metal nitride layer;
wherein depositing the work function metal nitride layer comprises using a deposition process that produces the work function metal nitride layer with equiaxed grains.
2. The method of claim 1 , wherein said deposition process comprises physical vapor deposition in radio frequency mode (RF-PVD).
3. The method of claim 2 , wherein the RF-PVD is performed at a temperature of about 20° C. and a pressure of about 10 mTorr.
4. The method of claim 2 , wherein the RF-PVD is performed at a temperature of between −10° C. and 100° C. and a pressure of between 7 mTorr and 50 mTorr.
5. The method of claim 1 , wherein the gate oxide layer is made of a high-k dielectric material.
6. The method of claim 1 , wherein depositing the gate oxide layer comprises introducing nitrogen to adjust centering of a transistor device having a transistor gate formed from the work function metal nitride layer and gate electrode layer.
7. The method of claim 6 , wherein said deposition process comprises physical vapor deposition in radio frequency mode (RF-PVD) performed at a temperature which will not desorb the nitrogen from the gate oxide layer.
8. The method of claim 1 , wherein the work function metal nitride layer is made of a titanium nitride material.
9. The method of claim 1 , wherein the gate electrode layer is made of a polysilicon material.
10. A method, comprising:
depositing a gate oxide layer over a substrate;
depositing over the gate oxide layer a work function metal nitride layer having equiaxed grains; and
depositing a gate electrode layer over the work function metal nitride layer with equiaxed grains.
11. The method of claim 10 , wherein depositing the work function metal nitride layer with equiaxed grains comprises performing a physical vapor deposition in radio frequency mode (RF-PVD).
12. The method of claim 11 , wherein the RF-PVD is performed at a temperature of about 20° C. and a pressure of about 10 mTorr.
13. The method of claim 11 , wherein the RF-PVD is performed at a temperature of between −10° C. and 100° C. and a pressure of between 7 mTorr and 50 mTorr.
14. The method of claim 10 , wherein the gate oxide layer is made of a high-k dielectric material.
15. The method of claim 10 , wherein depositing the gate oxide layer comprises introducing nitrogen to adjust centering of a transistor device having a transistor gate formed from the work function metal nitride layer with equiaxed grains and the gate electrode layer.
16. The method of claim 15 , wherein depositing the work function metal nitride layer with equiaxed grains comprises performing a physical vapor deposition in radio frequency mode (RF-PVD) at a temperature wherein nitrogen from the gate oxide layer does noe desorb.
17. The method of claim 10 , wherein the work function metal nitride layer with equiaxed grains is made of a titanium nitride material.
18. The method of claim 10 , wherein the gate electrode layer is made of a polysilicon material.