IP Library Granted Patent US 10,036,734
Granted Patent B2
US 10,036,734 · App. 14/293,841 · Granted Jul 31, 2018

Ultrasonic sensor with bonded piezoelectric layer

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Quick Facts
Patent No.
US 10,036,734
App. No.
14/293,841
Granted
Jul 31, 2018
Kind
B2
Abstract

This disclosure provides systems, methods and apparatus related to an ultrasonic sensor for detecting ultrasonic energy. In some implementations, the ultrasonic sensor includes a piezoelectric receiver layer bonded with an adhesive to an array of pixel circuits disposed on a substrate, each pixel circuit in the array including at least one thin film transistor (TFT) element and having a pixel input electrode electrically coupled to the pixel circuit. Methods of forming ultrasonic sensors include bonding piezoelectric receiver layers to TFT arrays.

Claims (42)

1. An apparatus comprising:

an ultrasonic transmitter for generating ultrasonic energy;

a platen; and

an ultrasonic receiver for detecting ultrasonic energy including:

an array of thin film transistor (TFT) pixel circuits disposed on a TFT substrate;

a piezoelectric receiver layer having first and second opposing surfaces, the first surface bonded with an adhesive to the TFT substrate and to the TFT pixel circuits; and

a receiver bias electrode overlying the second surface of the piezoelectric receiver layer, wherein the piezoelectric receiver layer is in electrical communication with the TFT pixel circuits, wherein the piezoelectric receiver layer is capacitively or resistively coupled through the adhesive with the TFT pixel circuits.

2. The apparatus of claim 1 , further comprising a spacer layer bonded between the platen and the ultrasonic receiver.

3. The apparatus of claim 1 , wherein the piezoelectric receiver layer is disposed between the platen and the TFT substrate and the ultrasonic transmitter is on the opposite side of the TFT substrate as the piezoelectric receiver layer.

4. The apparatus of claim 1 , wherein the piezoelectric receiver layer is disposed between the platen and the TFT substrate and the ultrasonic transmitter is on the same side of the TFT substrate as the piezoelectric receiver layer.

5. The apparatus of claim 1 , wherein the TFT substrate is disposed between the platen and the piezoelectric receiver layer and the ultrasonic transmitter is on the opposite side of the TFT substrate as the piezoelectric receiver layer.

6. The apparatus of claim 1 , wherein the TFT substrate is disposed between the platen and the piezoelectric receiver layer and the ultrasonic transmitter is on the same side of the TFT substrate as the piezoelectric receiver layer.

7. The apparatus of claim 1 , further comprising a protective cap on the opposite side of the TFT substrate as the platen and bonded to the TFT substrate.

8. The apparatus of claim 1 , further comprising a flexible printed circuit bonded to the TFT substrate.

9. The apparatus of claim 1 , wherein the receiver bias electrode is disposed on a flexible printed circuit.

10. The apparatus of claim 1 , wherein the ultrasonic transmitter includes a piezoelectric transmitter layer having first and second opposing surfaces, a first transmitter electrode overlying the first surface and a second transmitter electrode overlying the second surface.

11. The apparatus of claim 10 , wherein the one of the first and second transmitter electrodes is disposed on a flexible printed circuit.

12. An apparatus comprising:

an ultrasonic receiver for detecting ultrasonic energy including:

an array of thin film transistor (TFT) pixel circuits disposed on a TFT substrate;

a piezoelectric layer having first and second opposing surfaces, the first surface bonded with an adhesive to the TFT substrate and to the TFT pixel circuits; and

a receiver bias electrode overlying the second surface of the piezoelectric layer;

wherein the piezoelectric layer is in electrical communication with the TFT pixel circuits, wherein the piezoelectric receiver layer is capacitively or resistively coupled through the adhesive with the TFT pixel circuits.

13. The apparatus of claim 12 , wherein the adhesive has a lateral resistivity of at least 1 MΩ-cm.

14. The apparatus of claim 12 , wherein the adhesive is selected from an anisotropic conductive film (ACF) and (3-Aminopropyl)triethoxysilane (APTES).

15. The apparatus of claim 12 , wherein the adhesive has a thickness of no more than about 10 μm.

16. The apparatus of claim 12 , further comprising a flexible printed circuit (FPC) overlying the second surface of the piezoelectric layer, wherein the FPC includes the receiver bias electrode.

17. The apparatus of claim 16 , wherein the FPC is bonded to one or more conductive pads on the TFT substrate.

18. An apparatus comprising:

an ultrasonic transmitter for generating ultrasonic energy;

a platen; and

an ultrasonic receiver for detecting ultrasonic energy including:

an array of thin film transistor (TFT) pixel circuits disposed on a TFT substrate;

a piezoelectric receiver layer having first and second opposing surfaces, the first surface bonded with an adhesive to the TFT substrate and to the TFT pixel circuits; and

a receiver bias electrode overlying the second surface of the piezoelectric receiver layer, wherein the piezoelectric receiver layer is in electrical communication with the TFT pixel circuits, wherein the TFT substrate is disposed between the platen and the piezoelectric receiver layer and the ultrasonic transmitter is on the opposite side of the TFT substrate as the piezoelectric receiver layer.

19. An apparatus comprising:

an ultrasonic transmitter for generating ultrasonic energy;

a platen; and

an ultrasonic receiver for detecting ultrasonic energy including:

an array of thin film transistor (TFT) pixel circuits disposed on a TFT substrate;

a piezoelectric receiver layer having first and second opposing surfaces, the first surface bonded with an adhesive to the TFT substrate and to the TFT pixel circuits; and

a receiver bias electrode overlying the second surface of the piezoelectric receiver layer, wherein the piezoelectric receiver layer is in electrical communication with the TFT pixel circuits, wherein the TFT substrate is disposed between the platen and the piezoelectric receiver layer and the ultrasonic transmitter is on the same side of the TFT substrate as the piezoelectric receiver layer.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2016
From: QUALCOMM MEMS TECHNOLOGIES, INC.
To: SNAPTRACK, INC.
Reel/Frame 039891/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 9, 2014
From: FENNELL, LEONARD EUGENE; BUCHAN, NICHOLAS IAN; BURNS, DAVID WILLIAM; DJORDJEV, KOSTADIN DIMITROV; GOJEVIC, STEPHEN MICHAEL; KITCHENS, JACK CONWAY, II; SCHNEIDER, JOHN KEITH; BENNETT, NATHANIEL ROBERT; LAVERY, KRISTOPHER ANDREW
To: QUALCOMM MEMS TECHNOLOGIES, INC.
Reel/Frame 033273/0757 →
Cited By (5)
US 12,327,426 US 12,406,959 US 12,546,873 US 12,642,110 US 12,702,064