IP Library › Granted Patent US 1,009,819
Granted Patent S1
US 1,009,819 · App. 29/834,030 · Granted Jan 2, 2024

Semiconductor device

Inventor: Tsunehisa Ono (Kyoto, JP)
Assignee: ROHM CO., LTD.
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Quick Facts
Patent No.
US 1,009,819
App. No.
29/834,030
Granted
Jan 2, 2024
Kind
S1
Claims (1)

The ornamental design for a semiconductor device, as shown and described.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 8, 2022
From: ONO, TSUNEHISA
To: ROHM CO., LTD.
Reel/Frame 059549/0961 →
Priority Claims (1)
JP 2021-022273 D · Oct 13, 2021 · national