Thermally enhanced semiconductor package with thermal additive and process for making the same
The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.
1. An apparatus comprising:
a module substrate having an upper surface;
a thinned flip chip die comprising:
a device layer;
a dielectric layer over an upper surface of the device layer; and
a plurality of interconnects extending from a lower surface of the device layer and coupled to the upper surface of the module substrate;
a first mold compound component residing over the upper surface of the module substrate, surrounding the thinned flip chip die, and extending above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die, wherein the cavity includes a lower region and an upper region that resides over the lower region; and
a thermally enhanced mold compound component comprising:
a lower portion with a first average thermal conductivity, wherein the lower portion fills the lower region of the cavity and resides over the upper surface of the thinned flip chip die; and
an upper portion with a second average thermal conductivity, wherein the upper portion fills the upper region of the cavity and resides over the lower portion, and the first average thermal conductivity of the lower portion is at least 1.2 times greater than the second average thermal conductivity of the upper portion.
2. The apparatus of claim 1 wherein the thermally enhanced mold compound component is formed from a second mold compound component mixed with at least one thermal additive, and has no air pockets or voids, wherein the at least one thermal additive has a higher thermal conductivity than the second mold compound component and is dispersed throughout the lower portion at a first average density.
3. The apparatus of claim 2 wherein the at least one thermal additive is further dispersed in the upper portion at a second average density, which is less than the first average density.
4. The apparatus of claim 2 wherein the upper portion is void of the at least one thermal additive.
5. The apparatus of claim 2 wherein the at least one thermal additive is formed from boron nitride particulates.
6. The apparatus of claim 2 wherein the at least one thermal additive is formed from one of a group consisting of aluminum nitride, silicon nitride, alumina, beryllium oxide, carbon nanotube, and metamaterials.
7. The apparatus of claim 2 wherein the at least one thermal additive comprises a first thermal additive and a second thermal additive, which are each dispersed throughout the lower portion.
8. The apparatus of claim 2 wherein the at least one thermal additive comprises a first thermal additive and a second thermal additive, and the lower portion comprises a first lower portion and a second lower portion, wherein:
the first lower portion resides over the upper surface of the thinned flip chip die and the first thermal additive is dispersed throughout the first lower portion; and
the second lower portion resides over the first lower portion, and the second thermal additive is dispersed throughout the second lower portion.
9. The apparatus of claim 2 wherein the first mold compound component and the second mold compound component are formed from different materials.
10. The apparatus of claim 1 wherein the first average thermal conductivity is at least 1.2 w/m·k.
11. The apparatus of claim 10 wherein the second average thermal conductivity is at least 0.8 w/m·k.
12. The apparatus of claim 1 wherein the first average thermal conductivity is at least 3 w/m·k.
13. The apparatus of claim 12 wherein the second average thermal conductivity is at least 2.5 w/m·k.
14. The apparatus of claim 1 wherein the lower region is at least 1% of the entire cavity.
15. The apparatus of claim 1 further comprising an underfilling layer residing between the first mold compound component and the upper surface of the module substrate, and underfilling the thinned flip chip die between the lower surface of the device layer and the upper surface of the module substrate.
16. The apparatus of claim 15 wherein the underfilling layer is formed from a same material as the first mold compound component.
17. The apparatus of claim 1 wherein the upper portion of the thermally enhanced mold compound component further resides over the first mold compound component.
18. The apparatus of claim 1 wherein the upper surface of the thinned flip chip die is an upper surface of the dielectric layer.