Solid-state imaging devices having a microlens layer with dummy structures

1. A solid-state imaging device, having a sensing region, a pad region and a peripheral region located between the sensing region and the pad region, comprising:

a semiconductor substrate;

a plurality of photoelectric conversion elements disposed in the semiconductor substrate and in the sensing region;

a bond pad disposed on the semiconductor substrate and in the pad region;

a microlens layer, including a microlens array and a first dummy structure, disposed above the semiconductor substrate, wherein the microlens array is disposed in the sensing region, the first dummy structure is disposed in the pad region, and the first dummy structure includes a plurality of first microlens elements disposed to surround an area of the bond pad; and

a passivation film conformally formed on a top surface of the microlens layer.

2. The solid-state imaging device as claimed in claim 1 , wherein the first microlens elements are further disposed directly above the bond pad.

3. The solid-state imaging device as claimed in claim 1 , wherein the first dummy structure further includes a flat portion disposed directly above the bond pad, and the passivation film is conformally formed on the flat portion.

4. The solid-state imaging device as claimed in claim 1 , wherein the microlens layer further includes a second dummy structure disposed in the peripheral region, the second dummy structure includes a plurality of second microlens elements, and the microlens array includes a plurality of third microlens elements.

5. The solid-state imaging device as claimed in claim 4 , wherein each of the third microlens elements of the microlens array has a third microlens height that is greater than a second microlens height of each of the second microlens elements of the second dummy structure.

6. The solid-state imaging device as claimed in claim 5 , wherein the second microlens height is greater than a first microlens height of each of the first microlens elements of the first dummy structure.

7. The solid-state imaging device as claimed in claim 4 , wherein each of the first microlens elements has a first radius of curvature, each of the second microlens elements has a second radius of curvature, and the first radius of curvature is greater than the second radius of curvature.

8. The solid-state imaging device as claimed in claim 7 , wherein each of the third microlens elements of the microlens array has a third radius of curvature, and the second radius of curvature is greater than the third radius of curvature.

9. The solid-state imaging device as claimed in claim 4 , wherein the top of the microlens array is higher than the top of the second dummy structure, and the top of the second dummy structure is higher than the top of the first dummy structure.

10. The solid-state imaging device as claimed in claim 4 , wherein the third microlens elements of the microlens array, the second microlens elements of the second dummy structure and the first microlens elements of the first dummy structure are all arranged by the same pitch.

11. The solid-state imaging device as claimed in claim 1 , wherein the first microlens elements of the first dummy structure are continuously and regularly arranged in the pad region.

12. The solid-state imaging device as claimed in claim 1 , wherein the first microlens elements of the first dummy structure are discontinuously and randomly arranged in the pad region.

13. The solid-state imaging device as claimed in claim 4 , wherein the second microlens elements of the second dummy structure are continuously and regularly arranged in the peripheral region.

14. The solid-state imaging device as claimed in claim 4 , wherein the second microlens elements of the second dummy structure are discontinuously and randomly arranged in the peripheral region.

15. The solid-state imaging device as claimed in claim 1 , wherein the passivation film is a chemical vapor deposited film, the material of the chemical vapor deposited film includes silicon oxide, silicon nitride, silicon oxynitride or a combination thereof, and the passivation film continuously covers the sensing region, the peripheral region and the pad region.

16. The solid-state imaging device as claimed in claim 1 , further comprising:

a color filter layer disposed between the semiconductor substrate and the microlens layer;

a dielectric layer disposed between the color filter layer and the semiconductor substrate; and

an opening that penetrates through the passivation film, the microlens layer, the color filter layer and the dielectric layer to expose the bond pad.

17. The solid-state imaging device as claimed in claim 16 , further comprising a light-shielding layer disposed on the semiconductor substrate and in the sensing region and the peripheral region, wherein the light-shielding layer has an edge aligned with a boundary between the peripheral region and the pad region, the light-shielding layer comprises a metal grid, and each square of the metal grid corresponds to one individual pixel of the solid-state imaging device.

18. The solid-state imaging device as claimed in claim 17 , further comprising a planarization layer disposed between the light-shielding layer and the color filter layer, and the opening penetrates further through the planarization layer.

19. The solid-state imaging device as claimed in claim 1 , wherein the first dummy structure further includes a flat portion disposed directly above the bond pad and extending to an area outside of the area of the bond pad until an edge of the semiconductor substrate, and the passivation film is conformally formed on the flat portion.

20. The solid-state imaging device as claimed in claim 1 , further comprising an interconnection layer disposed below the semiconductor substrate, or disposed between the semiconductor substrate and the bond pad, wherein the bond pad is electrically connected to the interconnection layer.