Thick damage buffer for foil-based metallization of solar cells
View Patent ↗Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal foil to provide a plurality of alternating grooves and ridges in the metal foil. Non-conductive material regions are formed in the grooves in the metal foil. The metal foil is located above a plurality of alternating N-type and P-type semiconductor regions disposed in or above a substrate to provide the non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions and to provide the ridges in alignment with the alternating N-type and P-type semiconductor regions. The ridges of the metal foil are adhered to the alternating N-type and P-type semiconductor regions. The metal foil is patterned through the metal foil from a second surface of the metal foil at regions in alignment with the non-conductive material regions.
1. A solar cell, comprising:
a substrate;
a plurality of alternating N-type and P-type semiconductor regions disposed in or above the substrate;
a plurality of non-conductive material regions in alignment with locations between the alternating N-type and P-type semiconductor regions, the plurality of non-conductive material regions comprising a binder and an opacifying pigment;
a plurality of conductive contact structures electrically connected to the plurality of alternating N-type and P-type semiconductor regions, each conductive contact structure comprising a metal foil portion disposed above and in alignment with a corresponding one of the alternating N-type and P-type semiconductor regions, the metal foil portion comprising a ridge and an overhang portion, the ridge laterally adjacent to one of the plurality of non-conductive material regions and the overhang portion over the one of the plurality of non-conductive material regions; and
a plurality of air gaps, individual ones of the plurality of air gaps between corresponding ones of the plurality of non-conductive material regions and corresponding pairs of the alternating N-type and P-type semiconductor regions.
2. The solar cell of claim 1 , wherein the binder is a cellulose or a silsesquioxane.
3. The solar cell of claim 1 , wherein the opacifying pigment is titanium oxide (TiO 2 ) or calcium carbonate (CaCO 3 ).
4. The solar cell of claim 1 , wherein the metal foil portion comprises aluminum.
5. The solar cell of claim 1 , wherein a weld region couples the metal foil portion of each conductive contact structure to the corresponding one of the alternating N-type and P-type semiconductor regions.
6. The solar cell of claim 1 , wherein each conductive contact structure further comprises a metal seed layer disposed directly between the corresponding one of the alternating N-type and P-type semiconductor regions and the ridge of the metal foil portion.
7. The solar cell of claim 6 , wherein the metal seed layer has a thickness approximately in the range of 0.3 to 20 microns.
8. The solar cell of claim 6 , wherein the metal seed layer comprises aluminum in an amount greater than approximately 97% and silicon in an amount approximately in the range of 0-2%.
9. The solar cell of claim 1 , wherein the ridge of the metal foil portion of each conductive contact structure has a thickness approximately in the range of 50-100 microns.
10. The solar cell of claim 1 , wherein the plurality of alternating N-type and P-type semiconductor regions is a plurality of alternating N-type and P-type polycrystalline silicon regions.
11. A solar cell, comprising:
a substrate;
a semiconductor region disposed in or above the substrate;
non-conductive material regions in alignment with locations on both sides of the semiconductor region, the non-conductive material regions comprising a binder and an opacifying pigment;
a conductive contact structure electrically connected to the semiconductor region, the conductive contact structure comprising a metal foil portion disposed above and in alignment with the semiconductor region, the metal foil portion comprising a ridge and an overhang portion, the ridge laterally adjacent to the non-conductive material regions and the overhang portion over one of the non-conductive material region; and
an air gap between each of the non-conductive material regions and the semiconductor region.
12. The solar cell of claim 11 , wherein the binder is a cellulose or a silsesquioxane, and wherein the opacifying pigment is titanium oxide (TiO 2 ) or calcium carbonate (CaCO 3 ).
13. The solar cell of claim 11 , wherein the metal foil portion comprises aluminum.
14. The solar cell of claim 11 , wherein a weld region couples the metal foil portion to the semiconductor region.
15. The solar cell of claim 11 , wherein the conductive contact structure further comprises a metal seed layer disposed directly between the semiconductor region and the ridge of the metal foil portion.
16. The solar cell of claim 11 , wherein the ridge of the metal foil portion has a thickness approximately in the range of 50-100 microns.
17. The solar cell of claim 11 , wherein the semiconductor region is a polycrystalline silicon region.