Direct band gap group IV semiconductors and methods of preparing the same
A semiconductor film includes a two-dimensional (2D) material layer having a hexagonal in-plane lattice structure, and a substantially planar Group IV semiconductor layer having a direct band gap on the 2D material layer. A method of fabricating a semiconductor material includes growing a Group IV semiconductor material on a two-dimensional material having a hexagonal in-plane lattice structure. This growth process results in the Group IV semiconductor material having a direct band gap. The semiconductor films may be used in any optoelectronic device, including flexible devices.
1. A semiconductor film, comprising:
a two-dimensional material layer having a hexagonal in-plane lattice structure, the two-dimensional material layer comprising graphene, hexagonal boron nitride (h-BN), a transition metal dichalcogenide (TMDC), or a combination thereof; and
a substantially planar Group IV semiconductor layer on the two-dimensional material layer, the Group IV semiconductor layer having a direct band gap.
2. The semiconductor film of claim 1 , wherein the Group IV semiconductor layer comprises an elemental Group IV semiconductor material.
3. The semiconductor film of claim 1 , wherein the Group IV semiconductor layer is a single crystalline film.
4. The semiconductor film of claim 1 , wherein the Group IV semiconductor layer is substantially free of structural defects.
5. The semiconductor film of claim 1 , wherein the Group IV semiconductor layer comprises Si and/or Ge.
6. The semiconductor film of claim 1 , wherein the Group IV semiconductor layer is a thin film.
7. The semiconductor film of claim 1 , wherein the two-dimensional material layer comprises graphene, h-BN, NbSe 2 , MoS 2 , or a combination thereof.
8. An optoelectronic device, comprising the semiconductor film of claim 1 .
9. The optoelectronic device according to claim 8 , wherein the optoelectronic device is a flexible device.
10. A method of fabricating a semiconductor material, the method comprising:
growing a Group IV semiconductor material on a two-dimensional material, the two-dimensional material having a hexagonal in-plane lattice structure and comprising graphene, hexagonal boron nitride (h-BN), a transition metal dichalcogenide (TMDC), or a combination therof,
wherein the Group IV semiconductor material has a direct band gap after growth.
11. The method according to claim 10 , further comprising growing the two-dimensional material on a handle substrate prior to the growing of the Group IV semiconductor material.
12. The method according to claim 10 , wherein the growing the Group IV semiconductor material comprises an epitaxial growth technique.
13. The semiconductor film, comprising:
a two-dimensional material layer having a hexagonal in-plane lattice structure; and
a substantially planar Group IV semiconductor layer on the two-dimensional material layer, the Group IV semiconductor layer having a direct band gap and comprising a compound Group IV semiconductor material.
14. The semiconductor film of claim 13 , wherein the Group IV semiconductor layer is a single crystalline film.
15. The semiconductor film of claim 13 , wherein the Group IV semiconductor layer is substantially free of structural defects.
16. The semiconductor film of claim 13 , wherein the Group IV semiconductor layer comprises Si and/or Ge.
17. The semiconductor film of claim 13 , wherein the Group IV semiconductor layer is a thin film.
18. The semiconductor film of claim 13 , wherein the two-dimensional material layer comprises an insulating material, a semiconducting material, a metallic material, and/or a superconducting material.
19. The semiconductor film of claim 13 , wherein the two-dimensional material layer comprises graphene, hexagonal boron nitride (h-BN), a transition metal dichalcogenide (TMDC), or a combination thereof.
20. The semiconductor film of claim 13 , wherein the two-dimensional material layer comprises graphene, h-BN, NbSe 2 , MoS 2 , or a combination thereof.