Structure for a high resolution light-emitting device
A device includes a first light-emitting device and a second light-emitting device, each including an anode, a cathode, charge transport layers disposed between the anode and the cathode, and an emissive layer disposed between the charge transport layers. For the first light-emitting device, the emissive layer includes first quantum dots, the emissive layer configured to emit light at a first wavelength. For the second light-emitting device, the emissive layer includes emissive sub-layers provided in a stacked arrangement in a thickness direction. A first one of the emissive sub-layers includes the first quantum dots and is configured to emit light at the first wavelength, and a second one of the emissive sub-layers includes second quantum dots and is configured to emit light at a second wavelength different than the first wavelength.
1. A device, comprising:
a first light-emitting device, the first light emitting device comprising:
an anode;
a cathode;
charge transport layers disposed between the anode and the cathode; and
an emissive layer disposed between the charge transport layers, the emissive layer comprising first quantum dots, the emissive layer configured to emit light at a first wavelength upon radiative recombination of holes and electrons therein; and
a second light-emitting device, the second light-emitting device comprising:
an anode;
a cathode;
charge transport layers disposed between the anode and the cathode; and
an emissive layer disposed between the charge transport layers, the emissive layer comprising emissive sub-layers, a first one of the emissive sub-layers comprising the first quantum dots, the first one of the emissive sub-layers configured to emit light at the first wavelength upon radiative recombination of holes and electrons therein, a second one of the emissive sub-layers comprising second quantum dots, the second one of the emissive sub-layers configured to emit light at a second wavelength different than the first wavelength upon radiative recombination of holes and electrons therein, the first one of the emissive sub-layers of the second light-emitting device and the second one of the emissive sub-layers of the second light-emitting device provided in a stacked arrangement in a thickness direction between the anode and the cathode,
wherein the charge transport layers of the respective light-emitting devices comprise a hole transport layer proximate the anode and an electron transport layer proximate the cathode, and
wherein:
the hole transport layer is a limiting charge transfer layer having a hole mobility lower than an electron mobility of the electron transport layer;
the second one of the emissive sub-layers of the second light-emitting device has a narrower band gap than the first one of the emissive sub-layers of the second light-emitting device; and
the second one of the emissive sub-layers of the second light-emitting device is located closer to the hole transport layer than the first one of the emissive sub-layers of the second light-emitting device.
2. The device of claim 1 , wherein the first wavelength and the second wavelength are separated by more than 40 nm.
3. The device of claim 1 , wherein:
the first light-emitting device is configured to emit light of a single color corresponding to the first wavelength; and
the second light-emitting device is configured to emit light of a single color corresponding to the second wavelength.
4. The device of claim 1 , wherein the charge transport layers are common to the light-emitting devices.
5. The device of claim 1 , wherein the cathodes of the respective light-emitting devices are a part of a common cathode that is common to the light-emitting devices.
6. A device, comprising:
a first light-emitting device, the first light emitting device comprising:
an anode;
a cathode;
charge transport layers disposed between the anode and the cathode; and
an emissive layer disposed between the charge transport layers, the emissive layer comprising first quantum dots, the emissive layer configured to emit light at a first wavelength upon radiative recombination of holes and electrons therein; and
a second light-emitting device, the second light-emitting device comprising:
an anode;
a cathode;
charge transport layers disposed between the anode and the cathode; and an emissive layer disposed between the charge transport layers, the emissive layer comprising emissive sub-layers, a first one of the emissive sub-layers comprising the first quantum dots, the first one of the emissive sub-layers configured to emit light at the first wavelength upon radiative recombination of holes and electrons therein, a second one of the emissive sub-layers comprising second quantum dots, the second one of the emissive sub-layers configured to emit light at a second wavelength different than the first wavelength upon radiative recombination of holes and electrons therein, the first one of the emissive sub-layers of the second light-emitting device and the second one of the emissive sub-layers of the second light-emitting device provided in a stacked arrangement in a thickness direction between the anode and the cathode,
wherein the charge transport layers of the respective light-emitting devices comprise a hole transport layer proximate the anode and an electron transport layer proximate the cathode, and
wherein:
the electron transport layer is a limiting charge transfer layer having an electron mobility lower than a hole mobility of the hole transport layer;
the second one of the emissive sub-layers of the second light-emitting device has a narrower band gap than the first one of the emissive sub-layers of the second light-emitting device; and
the second one of the emissive sub-layers of the second light-emitting device is located closer to the electron transport layer than the first one of the emissive sub-layers of the second light-emitting device.
7. The device of claim 6 , wherein the first wavelength and the second wavelength are separated by more than 40 nm.
8. The device of claim 6 , wherein:
the first light-emitting device is configured to emit light of a single color corresponding to the first wavelength; and
the second light-emitting device is configured to emit light of a single color corresponding to the second wavelength.
9. The device of claim 6 , wherein the charge transport layers are common to the light-emitting devices.
10. The device of claim 6 , wherein the cathodes of the respective light-emitting devices are a part of a common cathode that is common to the light-emitting devices.
11. A device, comprising:
a first light-emitting device, the first light emitting device comprising:
an anode;
a cathode;
charge transport layers disposed between the anode and the cathode; and
an emissive layer disposed between the charge transport layers, the emissive layer comprising first quantum dots, the emissive layer configured to emit light at a first wavelength upon radiative recombination of holes and electrons therein;
a second light-emitting device, the second light-emitting device comprising:
an anode;
a cathode;
charge transport layers disposed between the anode and the cathode; and
an emissive layer disposed between the charge transport layers, the emissive layer comprising emissive sub-layers, a first one of the emissive sub-layers comprising the first quantum dots, the first one of the emissive sub-layers configured to emit light at the first wavelength upon radiative recombination of holes and electrons therein, a second one of the emissive sub-layers comprising second quantum dots, the second one of the emissive sub-layers configured to emit light at a second wavelength different than the first wavelength upon radiative recombination of holes and electrons therein, the first one of the emissive sub-layers of the second light-emitting device and the second one of the emissive sub-layers of the second light-emitting device provided in a stacked arrangement in a thickness direction between the anode and the cathode; and
a third light-emitting device, the third light-emitting device comprising:
an anode;
a cathode;
charge transport layers disposed between the anode and the cathode; and
an emissive layer disposed between the charge transport layers, the emissive layer comprising emissive sub-layers, a first one of the emissive sub-layers comprising the first quantum dots, the first one of the emissive sub-layers configured to emit light at the first wavelength upon radiative recombination of holes and electrons therein, a second one of the emissive sub-layers comprising the second quantum dots, the second one of the emissive sub-layers configured to emit light at the second wavelength different than the first wavelength upon radiative recombination of holes and electrons therein, a third one of the emissive sub-layers comprising third quantum dots, the third one of the emissive sub-layers configured to emit light at a third wavelength different than the first wavelength and different from the second wavelength upon radiative recombination of holes and electrons therein, the first one of the emissive sub-layers of the third light-emitting device, the second one of the emissive sub-layers of the third light-emitting device, and the third one of the emissive sub-layers of the third light-emitting device provided in a stacked arrangement in a thickness direction between the anode and the cathode.
12. The device of claim 11 , wherein the first wavelength, the second wavelength, and the third wavelength are each separated by more than 40 nm.
13. The device of claim 11 , wherein:
the first light-emitting device is configured to emit light of a single color corresponding to the first wavelength;
the second light-emitting device is configured to emit light of a single color corresponding to the second wavelength; and
the third light-emitting device is configured to emit light of a single color corresponding to the third wavelength.
14. The device of claim 11 , wherein the first wavelength is within the range of 400 nm-490 nm, the second wavelength is within the range of 500 nm-590 nm, and the third wavelength is within the range of 600 nm-700 nm.
15. The device of claim 11 , wherein the charge transport layers of the respective light-emitting devices comprise a hole transport layer proximate the anode and an electron transport layer proximate the cathode.
16. The device of claim 15 , wherein:
the hole transport layer is a limiting charge transfer layer having a hole mobility lower than an electron mobility of the electron transport layer;
for the second light-emitting device:
the second one of the emissive sub-layers of the second light-emitting device has a narrower band gap than the first one of the emissive sub-layers of the second light-emitting device; and
the second one of the emissive sub-layers of the second light-emitting device is located closer to the hole transport layer than the first one of the emissive sub-layers of the second light-emitting device; and
for the third light-emitting device:
the second one of the emissive sub-layers of the third light-emitting device has a narrower band gap than the first one of the emissive sub-layers of the third light-emitting device;
the third one of the emissive sub-layers of the third light-emitting device has a narrower band gap than the second one of the emissive sub-layers of the third light-emitting device; and
the third one of the emissive sub-layers of the third light-emitting device is located closer to the hole transport layer than the first one and second one of the emissive sub-layers of the third light-emitting device.
17. The device of claim 15 , wherein:
the electron transport layer is a limiting charge transfer layer having an electron mobility lower than a hole mobility of the hole transport layer;
for the second light-emitting device:
the second one of the emissive sub-layers of the second light-emitting device has a narrower band gap than the first one of the emissive sub-layers of the second light-emitting device; and
the second one of the emissive sub-layers of the second light-emitting device is located closer to the electron transport layer than the first one of the emissive sub-layers of the second light-emitting device; and
for the third light-emitting device:
the second one of the emissive sub-layers of the third light-emitting device has a narrower band gap than the first one of the emissive sub-layers of the third light-emitting device;
the third one of the emissive sub-layers of the third light-emitting device has a narrower band gap than the second one of the emissive sub-layers of the third light-emitting device; and
the third one of the emissive sub-layers of the third light-emitting device is located closer to the electron transport layer than the first one and second one of the emissive sub-layers of the third light-emitting device.
18. The device of claim 11 , wherein the charge transport layers are common to the light-emitting devices.
19. The device of claim 11 , wherein the cathodes of the respective light-emitting devices are a part of a common cathode that is common to the light-emitting devices.