High-performance LED fabrication
View Patent ↗High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm 2 .
1. An LED package comprising:
a substrate having a substrate top surface;
a plurality of contacts;
a reflective material disposed over at least a portion of said top surface, said reflective material not extending above said plurality of contacts; and
a first plurality of flip-chip LEDs and a second plurality of flip-chip LEDs, each having LED contacts, said LED contacts contacting said plurality of contacts, wherein the first and second pluralities of flip-chip LEDs have different emission colors.
2. The LED package of claim 1 , wherein one of the plurality of flip-chip LEDs is blue.
3. The LED package of claim 1 , wherein one of the plurality of flip-chip LEDs is violet.
4. The LED package of claim 1 , wherein the substrate comprises silicon.
5. The LED package of claim 1 , wherein the substrate comprises ceramic.
6. The LED package of claim 1 , wherein the reflective material comprises silver and at least one layer of dielectric.
7. The LED package of claim 1 , wherein the reflective material comprises TiOx.
8. The LED package of claim 7 , wherein the reflective material comprises at least one homogenous layer of TiOx.
9. The LED package of claim 1 , further comprising a wavelength-converting material configured over the first and second pluralities of flip-chip LEDs.
10. The LED package of claim 9 , wherein the wavelength-converting material is optically coupled to an emission from the first plurality of flip-chip LEDs and the second plurality of flip-chip LEDs.
11. The LED package of claim 10 , wherein said wavelength-converting material comprises at least a red phosphor and at least a green phosphor.
12. The LED package of claim 1 , wherein the first and second pluralities of flip-chip LEDs are grown on bulk GaN.
13. The LED package of claim 1 , wherein said reflective material electrically connects at least a portion of said contacts.
14. The LED package of claim 13 , wherein said LED contacts comprise an n-contact and a p-contact, and wherein said reflective material comprises at least a first conductive region and a second conductive region to provide separate electrical connections to each of said n-contact and said p-contact.
15. The LED package of claim 14 , wherein the first conductive region and the second conductive region are electrically isolated.
16. The LED package of claim 15 , wherein said first and second conductive regions are isolated by a separation street.
17. The LED package of claim 1 , further comprising a plurality of traces electrically connecting said contacts.
18. The LED package of claim 17 , wherein the plurality of traces comprise copper.
19. The LED package of claim 18 , wherein the reflective material comprises TiOx.
20. The LED package of claim 19 , wherein the reflective material comprises at least one homogenous layer of TiOx.