IP Library Granted Patent US 10,778,921
Granted Patent B2
US 10,778,921 · App. 16/491,555 · Granted Sep 15, 2020

Solid-state imaging device, and camera system using same

Inventors: Yutaka Abe (Osaka, JP); Kazuko Nishimura (Kyoto, JP); Hiroshi Fujinaka (Osaka, JP); Masahiro Higuchi (Hyogo, JP); Dai Ichiryu (Osaka, JP)
Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
H04N5/37455H03M1/38H03M1/56H04N5/378
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,778,921
App. No.
16/491,555
Granted
Sep 15, 2020
Kind
B2
Abstract

A solid-state imaging device includes an A/D converter per column. The A/D converter performs a first A/D conversion that (i) refines, using a first comparator, a range including a potential of an analog signal to a range of a potential corresponding to a difference between a first potential and a second potential through a binary search, and further (ii) generates, based on a result of the binary search, a first digital signal being a high-order portion of a digital signal. The A/D converter also performs a second A/D conversion that generates, based on a ramp signal and the result of the binary search, a second digital signal being a low-order portion of a remainder of the digital signal, by measuring a time necessary for an output of a second comparator to be inverted.

Claims (58)

1. A solid-state imaging device, comprising:

a plurality of pixel cells arranged in an X-direction and a Y-direction, the plurality of pixels cells each including a photoelectric converter that converts an optical signal to an electrical signal;

a plurality of vertical signal lines arranged in the X-direction that are connected to the plurality of pixel cells and transmit the electrical signal as an analog signal; and

a plurality of analog-to-digital (A/D) converters arranged in the X-direction that are respectively connected to the plurality of vertical signal lines and convert the analog signal to a digital signal, wherein

the plurality of A/D converters each:

include a first comparator and a second comparator;

perform a first A/D conversion that (i) refines, using the first comparator, a range including a potential of the analog signal to a range of a potential corresponding to a difference between a first potential and a second potential through a binary search, and further (ii) generates, based on a result of the binary search, a first digital signal being a high-order portion of the digital signal; and

perform a second A/D conversion that generates, based on a ramp signal and the result of the binary search, a second digital signal being a low-order portion of a remainder of the digital signal, by measuring a time necessary for an output of the second comparator to be inverted.

2. The solid-state imaging device according to claim 1 , further comprising:

a bias generator circuit and a digital-to-analog (D/A) converter circuit, wherein

the bias generator circuit generates the first potential and the second potential, and

the D/A converter circuit generates the ramp signal.

3. The solid-state imaging device according to claim 2 , wherein

the second comparator compares a quantitative relationship between a potential of a first node connectable to the plurality of vertical signal lines and a potential of the ramp signal,

the bias generator circuit generates the first potential and the second potential respectively using a first input potential and a second input potential, and

the D/A converter circuit generates the ramp signal using the first input potential and the second input potential.

4. The solid-state imaging device according to claim 2 , wherein

the plurality of A/D converters each include

a first buffer circuit and a second buffer circuit,

the first potential generated in the bias generator circuit is input into an input terminal of the first buffer circuit, and a first signal line is connected to an output terminal of the first buffer circuit, and

the second potential generated in the bias generator circuit is input into an input terminal of the second buffer circuit, and a second signal line is connected to an output terminal of the second buffer circuit.

5. The solid-state imaging device according to claim 4 , wherein

the output terminals of the first buffer circuits in the plurality of A/D converters are mutually connected, and

the output terminals of the second buffer circuits in the plurality of A/D converters are mutually connected.

6. The solid-state imaging device according to claim 2 , wherein

the plurality of A/D converters each include

a buffer circuit, and

the first potential generated in the bias generator circuit is input into an input terminal of the buffer circuit, and a first signal line is connected to an output terminal of the buffer circuit.

7. The solid-state imaging device according to claim 6 , wherein

the output terminals of the buffer circuits in the plurality of A/D converters are mutually connected.

8. The solid-state imaging device according to claim 6 , wherein

the bias generator circuit includes a subtractor circuit having two input terminals and one output terminal,

the first input potential and the second input potential are input into the two input terminals of the subtractor circuit, and

the subtractor circuit outputs the first potential from the one output terminal.

9. The solid-state imaging device according to claim 6 , wherein

the second potential is a power supply potential or a ground potential.

10. The solid-state imaging device according to claim 8 , further comprising:

an operational amplifier and a replica circuit in which a plurality of circuits with the same configuration as the buffer circuit are connected in parallel, wherein

one input terminal of the operational amplifier is connected to the one output terminal of the subtractor circuit,

another input terminal of the operational amplifier is connected to an output line of the replica circuit, and

an output terminal of the operational amplifier is connected to the first signal line.

11. The solid-state imaging device according to claim 8 , wherein

the subtractor circuit changes an amplification factor.

12. The solid-state imaging device according to claim 4 , wherein

a buffer circuit is a source follower circuit.

13. The solid-state imaging device according to claim 1 , wherein the second A/D conversion is performed after the first A/D conversion.

14. The solid-state imaging device according to claim 1 , wherein

the first comparator and the second comparator have a different configuration.

15. The solid-state imaging device according to claim 1 , wherein

the first comparator is a latch comparator circuit.

16. The solid-state imaging device according to claim 1 , wherein

the first comparator is a chopper comparator circuit.

17. The solid-state imaging device according to claim 1 , wherein

the second comparator is a differential amplifier comparator circuit.

18. The solid-state imaging device according to claim 1 , wherein

the photoelectric converter includes a photoelectric conversion film.

19. A camera system, comprising:

the solid-state imaging device according to claim 1 .

Assignments (3)
CHANGE OF NAME Recorded May 14, 2021
From: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
To: NUVOTON TECHNOLOGY CORPORATION JAPAN
Reel/Frame 056245/0395 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0870 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2020
From: ABE, YUTAKA; NISHIMURA, KAZUKO; FUJINAKA, HIROSHI; HIGUCHI, MASAHIRO; ICHIRYU, DAI
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 051552/0333 →