Light extraction using feature size and shape control in LED surface roughening
The structural characteristics of the light-exiting surface of a light emitting device are controlled so as to increase the light extraction efficiency of that surface when the surface is roughened. A light emitting surface comprising layers of materials with different durability to the roughening process exhibits a higher light extraction efficiency than a substantially uniform light emitting surface exposed to the same roughening process. In a GaN-type light emitting device, a thin layer of AlGaN material on or near the light-exiting surface creates sharper features after etching compared to the features created by conventional etching of a surface comprising only GaN material.
1. A light emitting device, comprising:
a light emitting structure, comprising:
a light extraction surface, comprising:
a first conductive layer comprising AlxGa1-xN with x between 0.2 and 0.8;
a second conductive layer comprising AlxGa1-xN with x between 0 and 0.2; and
peaks in the first conductive layer of the light extraction surface and valleys in the second conductive layer of the light extraction surface, such that the peaks in the first conductive layer are sharper than the features at valleys in the second conductive layer;
an active layer; and
an N-type contact and a P-type contact on a same surface opposite the light extraction surface.
2. The device of claim 1 , wherein the features peaks and the valleys are etched via a photo-electrochemical (PEC) wet etching technique.
3. The device of claim 1 , wherein the peaks and the valleys are etched via a multi-step process comprising a dry etch and a wet etch process.
4. The device of claim 1 , further comprising a wavelength converting layer.
5. The device of claim 4 , wherein the wavelength converting layer is formed on a roughened surface.
6. A light emitting device, comprising:
a light emitting structure, comprising:
a light extraction surface, comprising:
a first conductive layer comprising InAlxGa1-xP with x between 0.5 and 1.0;
a second conductive layer comprising InAlxGa1-xP with x between 0 and 0.4; and
peaks in the first conductive layer of the light extraction surface and valleys in the second conductive layer of the light extraction surface, such that the peaks in the first conductive layer are sharper than the valleys in the second conductive layer;
an active layer; and
an N-type contact and a P-type contact on a same surface opposite the light extraction surface.
7. The device of claim 6 , wherein the peaks and the valleys are etched via a photo-electrochemical (PEC) wet etching technique.
8. The device of claim 6 , wherein the peaks and the valleys are etched via a multi-step process comprising a dry etch and a wet etch process.
9. The device of claim 6 , further comprising a wavelength converting layer.
10. The device of claim 9 , wherein the wavelength converting layer is formed on a roughened surface.