Performance SiC Schottky diodes
An embodiment relates to a semiconductor component, comprising a semiconductor body of a first conduction type comprising a voltage blocking layer; and islands of a second conductivity type on a contact surface; and a metal layer on the voltage blocking layer, wherein the metal layer and the voltage blocking layer includes a Schottky contact, and a first conductivity type layer comprising the first conduction type not in contact with the Schottky contact that is interspersed between the islands of the second conductivity type.
1. A semiconductor component, comprising a semiconductor body of a first conduction type comprising a voltage blocking layer; and islands of a second conductivity type on a contact surface; and a metal layer on the voltage blocking layer, wherein the metal layer and the voltage blocking layer includes a Schottky contact, and a first conductivity type layer comprising the first conduction type not in contact with the Schottky contact that is interspersed between the islands of the second conductivity type.
2. The semiconductor component of claim 1 , wherein a vertical extent of the first conductivity type layer is lower than a bottom of the islands of the second conductivity type.
3. The semiconductor component of claim 1 , wherein a vertical extent of the first conductivity type layer is higher than a bottom of the islands of the second conductivity type.
4. The semiconductor component of claim 1 , wherein a doping concentration within the first conductivity type layer is non-uniform in a direction that is perpendicular to the Schottky contact.
5. The semiconductor component of claim 1 , wherein a vertical extent of the first conductivity type layer is higher or lower than a bottom of the islands of the second conductivity type.
6. The semiconductor component of claim 1 , wherein the first conductivity type layer has a doping concentration that does not vary in any direction along the contact surface.
7. The semiconductor component of claim 1 , wherein the first conductivity type layer has a first doping concentration that is higher than a second doping concentration of a drift region.
8. The semiconductor component of claim 1 , wherein the first conductivity type layer has a first doping concentration that is lower than a second doping concentration of a drift region.
9. The semiconductor component of claim 1 , wherein the Schottky contact comprises a metal comprising Al, Ag, Au, Mo, Ni, Ti, W, Ti x W y , Ti x N y , or combinations thereof.
10. A diode comprising P+ islands interspersed within a N+ region and a N− region contacts with a Schottky layer.
11. The diode of claim 10 , wherein a vertical extent of the N+ region is lower than a bottom of the P+ islands.
12. The diode of claim 10 , wherein a vertical extent of the N+ region is higher than a bottom of the P+ islands.
13. The diode of claim 10 , wherein a doping concentration within the N+ region is non-uniform in a direction that is perpendicular to the Schottky layer.
14. The diode of claim 10 , wherein a vertical extent of the N+ region is higher or lower than a bottom of the P+ islands.
15. A diode comprising N+ islands interspersed within a P+ region and a P− region contacts with a Schottky layer.
16. The diode of claim 15 , wherein a vertical extent of the P+ region is lower than a bottom of the N+ islands.
17. The diode of claim 15 , wherein a vertical extent of the P+ region is higher than a bottom of the N+ islands.
18. The diode of claim 15 , wherein a doping concentration within the P+ region is non-uniform in a direction that is perpendicular to the Schottky layer.
19. The diode of claim 15 , wherein a vertical extent of the P+ region is higher or lower than a bottom of the N+ islands.