IP Library Granted Patent US 10,901,124
Granted Patent B1
US 10,901,124 · App. 17/030,411 · Granted Jan 26, 2021

Wavelength-selective absorptive material, infrared sensor, wavelength-selective light source, and radiation cooling system

Inventor: Hideki Yasuda (Kanagawa, JP)
Assignee: FUJIFILM CORPORATION
G02B5/208B32B7/023F28F13/18G02B5/26B32B2307/418B32B2309/105
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Quick Facts
Patent No.
US 10,901,124
App. No.
17/030,411
Granted
Jan 26, 2021
Kind
B1
Abstract

Provided is a wavelength-selective absorptive material which includes, in the following order: a base material; a reflective layer; and a high refractive index layer having a refractive index n of 3.0 or more with respect to infrared light having a wavelength range of 8 μm to 13 μm, having a thickness d of 30 nm to 1,000 nm, and containing a binder and flat metal particles; and an infrared absorptive layer having a maximum absorption wavelength in a wavelength range of 8 μm to 13 μm, in which a product n×d of the refractive index n and the thickness d is more than 1,000 and less than 4,875.

Claims (19)

1. A wavelength-selective absorptive material comprising, in the following order:

a base material;

a reflective layer;

a high refractive index layer having a refractive index n of 3.0 or more with respect to infrared light having a wavelength range of 8 μm to 13 μm, having a thickness d of 30 nm to 1,000 nm, and containing a binder and flat metal particles A; and

an infrared absorptive layer having a maximum absorption wavelength in the wavelength range of 8 μm to 13 μm,

wherein a product n×d of the refractive index n and the thickness d is more than 1,000 and less than 4,875.

2. The wavelength-selective absorptive material according to claim 1 , wherein the infrared absorptive layer contains particles B having a maximum absorption wavelength in the wavelength range of 8 μm to 13 μm.

3. The wavelength-selective absorptive material according to claim 2 , wherein the particles B have a reststrahlen band, which results from phonon oscillation, in the wavelength range of 8 μm to 13 μm.

4. The wavelength-selective absorptive material according to claim 2 , wherein the particles B include a SiO 2 particle, a SiC particle, or a SiN particle.

5. The wavelength-selective absorptive material according to claim 2 , wherein a volume content proportion of the particles B is 1% by volume to 50% by volume with respect to an entire infrared absorptive layer.

6. The wavelength-selective absorptive material according to claim 1 , wherein a value obtained by dividing an average particle size of the flat metal particles A by an average thickness thereof is 5 or more, principal planes of the flat metal particles A are plane-oriented in a range of 0° to 30° with respect to a surface of the high refractive index layer, a volume fraction of the flat metal particles A in the high refractive index layer is 30% by volume or more, and the flat metal particles A are laminated in two or more layers.

7. The wavelength-selective absorptive material according to claim 1 , wherein the flat metal particles A contain at least silver.

8. The wavelength-selective absorptive material according to claim 1 , wherein a shape of a principal plane of each flat metal particle A is a polygonal shape of a hexagonal shape or a higher polygonal shape, or a circular shape.

9. An infrared sensor comprising:

the wavelength-selective absorptive material according to claim 1 .

10. A wavelength-selective light source comprising:

the wavelength-selective absorptive material according to claim 1 .

11. A radiation cooling system comprising:

the wavelength-selective absorptive material according to claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 6, 2020
From: YASUDA, HIDEKI
To: FUJIFILM CORPORATION
Reel/Frame 053980/0017 →
Priority Claims (1)
JP 2018-065524 · Mar 29, 2018 · national
Continuity (1)
Continuation PCTJP2019013285 · Mar 27, 2019