Transversely-excited film bulk acoustic resonator with lateral etch stop
Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a front surface and a cavity, a perimeter of the cavity defined by a lateral etch-stop comprising etch-stop material. A back surface of a single-crystal piezoelectric plate is attached to the front surface of the substrate except for a portion of the piezoelectric plate that forms a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm.
1. An acoustic resonator device comprising:
a substrate comprising a device layer having opposed front and back surfaces, a handle layer, and a buried layer laminated between the handle layer and the back surface of the device layer, wherein a cavity open to the front surface is formed in the device layer;
a lateral etch-stop that defines a perimeter of the cavity, the lateral etch-stop comprising a lateral etch-stop material different from a material of the device layer;
a single-crystal piezoelectric plate having opposed front and back surfaces, the back surface attached to the front surface of the device layer except for a portion of the piezoelectric plate forming a diaphragm that spans the cavity; and
an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm.
2. The device of claim 1 , wherein
the piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.
3. The device of claim 2 , wherein the piezoelectric plate is one of lithium niobate and lithium tantalate.
4. The device of claim 1 , further comprising:
a bonding layer disposed between and in contact with the back surface of the piezoelectric plate and the front surface of the device layer.
5. The device of claim 1 , wherein
the cavity extends from the back surface of the piezoelectric plate though the device layer to the buried layer.
6. The device of claim 1 , wherein
the device layer is silicon,
the buried layer is silicon dioxide, and
the handle layer is silicon.
7. The device of claim 1 , wherein
the lateral etch-stop material comprises one of silicon oxide, silicon nitride, silicon oxynitride, a metal oxide, a metal nitride a glass, a ceramic, and a polymer material.
8. The device of claim 1 , wherein
the cavity is formed by an etch process; and
the lateral etch-stop and the buried layer are substantially impervious to the etch process.
9. An acoustic filter device comprising:
a substrate comprising a device layer having opposed front and back surfaces, a handle layer, and a buried layer laminated between the handle layer and the back surface of the device layer, wherein a plurality of cavities open to the front surface are formed in the device layer;
a plurality of lateral etch-stops, each lateral etch-stop defining a perimeter of a respective cavity from the plurality of cavities, each lateral etch-stop comprising a lateral etch-stop material different from a material of the device layer;
a single-crystal piezoelectric plate having opposed front and back surfaces, the back surface attached to the front surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms, each diaphragm spanning a respective cavity from the plurality of cavities; and
a plurality of interdigital transducers (IDTs) of a plurality of resonators formed on the front surface of the piezoelectric plate such that interleaved fingers of each IDT are disposed on a respective diaphragm from the plurality of diaphragms.
10. The device of claim 9 , wherein
the piezoelectric plate and all of the plurality of IDTs are configured such that radio frequency signals applied to the plurality of IDTs excite primary shear acoustic modes in the respective diaphragms.
11. The device of claim 10 , wherein the piezoelectric plate is one of lithium niobate and lithium tantalate.
12. The device of claim 9 , further comprising:
a bonding layer disposed between and in contact with the back surface of the piezoelectric plate and the front surface of the device layer.
13. The device of claim 9 , wherein
each cavity from the plurality of cavities extends from the back surface of the piezoelectric plate though the device layer to the buried layer.
14. The device of claim 9 , wherein
the device layer is silicon,
the buried layer is silicon dioxide, and
the handle layer is silicon.
15. The device of claim 9 , wherein
the lateral etch-stop material comprises one of silicon oxide, silicon nitride, silicon oxynitride, a metal oxide, a metal nitride a glass, a ceramic, and a polymer material.
16. The device of claim 9 , wherein
the plurality of cavities are formed by an etch process; and
the plurality of lateral etch-stops and the buried layer are substantially impervious to the etch process.
17. The device of claim 9 , wherein the plurality of resonators includes one or more shunt resonators and one or more series resonators, the device further comprising:
a dielectric layer selectively formed over the IDTs of shunt resonators to shift a resonance frequency of the shunt resonators relative to a resonance frequency of series resonators.
18. The device of claim 9 , further comprising:
an encapsulation/passivation layer deposited over all or a substantial portion of the device.