IP Library Granted Patent US 11,459,656
Granted Patent B1
US 11,459,656 · App. 17/512,944 · Granted Oct 4, 2022

Method and precursors for producing oxostannate rich films

Inventors: Barry C. Arkles (Pipersville, PA); Youlin Pan (Langhorne, PA); Jonathan D. Goff (Philadelphia, PA); Li Yang (Belle Mead, NJ)
Assignee: GELEST, INC
C23C16/45553C23C16/56G03F7/0043G03F7/11G03F7/167G03F7/2004
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Quick Facts
Patent No.
US 11,459,656
App. No.
17/512,944
Granted
Oct 4, 2022
Kind
B1
Abstract

A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which R f is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2: (R f CH 2 ) n SnX (4-n)   (I).

Claims (27)

1. A method for forming a fluorinated oxostannate film comprising:

vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.;

providing a substrate;

physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and

exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis and irradiation steps followed by an oxidation or second hydrolytic exposure to form the fluorinated oxostannate thin film on the substrate.

2. The method according to claim 1 , wherein the fluorinated alkyltin compound is 3,3,3-trifluoropropyltris(dimethylamino)tin; 3,3,3-trifluoropropyltrichlorotin; 3,3,3-trifluoropropyltriphenyltin; 3,3,3-trifluoropropyltris(diethylamino)tin; 3,3,3-trifluoropropyltris(diisopropylamino)tin; 3,3,3-trifluoropropyltris(methylethylamino)tin; 2,2,2-trifluoroethyltrichlorotin; or 6,6,6,5,5,4,4,3,3-nonafluorobutyltrichlorotin.

3. A method for forming a patterned film comprising preparing the fluorinated oxostannate thin film according to claim 1 and exposing the film to non-continuous radiation by rastering with an electron beam or laser or lithographic masking.

4. A method for forming a continuous film comprising preparing the fluorinated oxostannate thin film according to claim 1 and exposing the film to blanket exposure utilizing a suitable lithographic mask to provide optically clear fluorine doped tin oxide conductive film.

5. The method according to claim 1 , wherein the fluorinated alkyltin compound has formula (I):

(R f CH 2 ) n SnX (4-n)   (I)

wherein R f is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 6 carbon atoms, X is a hydrolytically or oxidatively unstable group, and n is 1 or 2.

6. The method according to claim 5 , wherein R f is a fluorinated or partially fluorinated ethyl group.

7. The method according to claim 5 , wherein each X is independently selected from a dialkylamino group having about 1 to about 4 carbon atoms and a halogen group.

8. The method according to claim 7 , wherein X is a dimethylamino group, a diethylamino group, a diisopropylamino group, or a methylethylamino group.

9. The method according to claim 7 , wherein X is Cl, Br, or H.

10. A fluorinated alkyltin compound having formula (I):

(R f CH 2 ) n SnX (4-n)   (I)

wherein R f is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2, and wherein the compound is 3,3,3-trifluoropropyltris(dimethylamino)tin; 3,3,3-trifluoropropyltris(diethylamino)tin; 3,3,3-trifluoropropyltris(diisopropylamino)tin; or 3,3,3-trifluoropropyltris(methylethylamino)tin.

11. A two-component deposition mixture comprising: (a) a volatile fluorinated monoalkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; and (b) a fluorinated dialkyltin compound, wherein the fluorinated alkyl group in the monoalkyltin compound is the same as the fluorinated alkyl group in the dialkyltin compound.

12. The mixture according to claim 11 , wherein the fluorinated monoalkyltin compound has formula (II) and the fluorinated dialkyltin compound has formula (III):

(R f CH 2 )SnX 3   (II)

(R f CH 2 ) 2 SnX 2   (III)

wherein R f is a fluorinated or partially fluorinated linear or branched alkyl group having about 2 to about 6 carbon atoms, and X is a hydrolytically or oxidatively unstable group.

13. A method for forming a fluorinated oxostannate film comprising: vaporizing the mixture according to claim 12 ;

providing a substrate;

physisorbing or chemisorbing the vaporized mixture onto the substrate; and

exposing the physisorbed or chemisorbed mixture to a sequence of hydrolysis and irradiation steps followed by an oxidation or second hydrolytic exposure to form the fluorinated oxostannate thin film on the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 28, 2021
From: ARKLES, BARRY C.; PAN, YOULIN; GOFF, JONATHAN; YANG, LI
To: GELEST, INC.
Reel/Frame 057946/0531 →
Continuity (1)
Provisional Application 63243266 · Sep 13, 2021
Cited By (6)
US 12,504,689 US 12,545,692 US 12,545,693 US 12,581,710 US 12,606,577 US 12,703,713