Core shell quantum dot, production method thereof, and electronic device including the same

1. A quantum dot population comprising a plurality of quantum dots, each of the quantum dots comprising

zinc,

tellurium, and

selenium and

not comprising cadmium,

wherein a maximum luminescent peak of the quantum dots is present in a wavelength range of greater than about 470 nm and a quantum efficiency of the quantum dots is greater than or equal to about 10%,

wherein each of the quantum dots comprises a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the core, and

wherein in the quantum dots, a mole ratio of tellurium with respect to selenium is greater than about 0.15:1 and less than or equal to 2.7.

2. The quantum dot population of claim 1 , wherein in the quantum dots, a mole ratio of tellurium with respect to selenium is greater than about 0.2:1.

3. The quantum dot population of claim 1 , wherein in the quantum dots, a mole ratio of tellurium with respect to selenium is less than or equal to about 2.5:1.

4. The quantum dot population of claim 1 , wherein in the quantum dots, a mole ratio of tellurium with respect to zinc is greater than or equal to about 0.1:1.

5. The quantum dot population of claim 1 , wherein the quantum dots comprise aluminum, lithium, or a combination thereof.

6. The quantum dot population of claim 1 , wherein the quantum dots do not comprise manganese, copper, or a combination thereof.

7. The quantum dot population of claim 1 , wherein the quantum dots do not comprise a Group III-V compound comprising indium or gallium.

8. The quantum dot population of claim 1 , wherein a maximum photoluminescent peak wavelength of the quantum dots is in a range of greater than or equal to about 480 nanometers and less than or equal to about 560 nanometers.

9. The quantum dot population of claim 1 , wherein the maximum photoluminescent peak of the quantum dots has a FWHM of less than or equal to about 40 nanometers.

10. The quantum dot population of claim 1 , wherein the quantum efficiency is greater than or equal to about 20%.

11. The quantum dot population of claim 1 , wherein the semiconductor nanocrystal shell comprises zinc; and selenium, sulfur, or a combination thereof.

12. The quantum dot population of claim 1 , wherein the quantum dots comprises ZnTe x Se 1-x , wherein x is greater than or equal to about 0.5 and less than or equal to about 0.9.

13. The quantum dot population of claim 1 , wherein the semiconductor nanocrystal shell comprises ZnSe, ZnS, ZnSeS, or a combination thereof.

14. The quantum dot population of claim 1 , wherein the quantum dots show a Zinc Blende crystal structure in an X-ray diffraction analysis.

15. The quantum dot population of claim 1 , wherein the quantum dots comprise an organic ligand and the organic ligand comprises RCOOH, RNH 2 , R 2 NH, R 3 N, RSH, RH 2 PO, R 2 HPO, R 3 PO, RH 2 P, R 2 HP, R 3 P, ROH, RCOOR′, RHPO(OH), RPO(OH) 2 , R 2 POOH, a polymeric organic ligand, or a combination thereof, wherein R and R′ are the same or different and are each independently a substituted or unsubstituted C1 to C40 aliphatic hydrocarbon group, a substituted or unsubstituted C6 to C40 aromatic hydrocarbon group, or a combination thereof.

16. The quantum dot population of claim 1 , wherein the quantum dots are water-insoluble.

17. The quantum dot population of claim 1 , wherein an average roundness of the plurality of the quantum dots is greater than or equal to about 0.70.

18. The quantum dot population of claim 17 , wherein an average size of the plurality of the quantum dots is greater than or equal to about 2 nanometers and less than or equal to about 50 nanometers.

19. The quantum dot population of claim 17 , wherein a standard deviation of particle sizes of the plurality of the quantum dots is less than about 18% of an average size of the quantum dots.

20. A method of manufacturing the quantum dot population of claim 1 , comprising:

preparing the core comprising the first semiconductor nanocrystal, the first semiconductor nanocrystal comprising zinc, tellurium, and selenium; and

reacting a zinc precursor with a selenium precursor, a sulfur precursor, or a combination thereof in a third organic solvent, in the presence of the core particle and a third organic ligand at a shell formation temperature to form the semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell comprising zinc, and at least one of selenium, and sulfur,

wherein the preparing of the core comprises

preparing a zinc precursor organic solution comprising a zinc precursor and a first organic ligand in a first organic solvent; and

while heating the zinc precursor organic solution at a first reaction temperature, adding to the zinc precursor organic solution a selenium precursor, a tellurium precursor, a metal hydride compound, and a second organic ligand, and

wherein the tellurium precursor comprises tellurium dispersed in a second organic solvent and wherein a concentration of the tellurium in the tellurium precursor is greater than about 0.1 moles per liter.

21. The method of claim 20 , wherein the first reaction temperature is greater than or equal to about 280° C.

22. A display device comprising

a light emitting element,

wherein the light emitting element comprises the quantum dot population of claim 1 .

23. The display device of claim 22 , wherein the light emitting element comprises a stacked structure comprising a patterned light emitting layer, wherein the patterned light emitting layer comprises a repeating section configured to emit light at a predetermined wavelength, and wherein the first repeating section comprises the quantum dots.