Method for heating a wide bandgap substrate by providing a resistive heating element which emits radiative heat in a mid-infrared band
Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.
1. A method of heating a substrate in a vacuum deposition process, the method comprising:
providing a resistive heater having a resistive heating element, wherein radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of a substrate, wherein the substrate comprises a wide bandgap (WBG) semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface;
positioning the resistive heater and the substrate in a vacuum deposition chamber, wherein the uncoated surface of the substrate is spaced apart from and faces the resistive heater;
operating the vacuum deposition chamber at a pressure less than or equal to 5×10 −4 Torr; and
generating the radiative heat from the resistive heating element, wherein the uncoated surface of the substrate is directly heated by absorbing the radiative heat.
2. The method of claim 1 , wherein the resistive heating element comprises SiC.
3. The method of claim 2 , wherein the SiC is n-type doped.
4. The method of claim 1 , wherein the resistive heating element comprises Ga 2 O 3 .
5. The method of claim 4 , wherein the Ga 2 O 3 is coated with SiC.
6. A method of depositing an epitaxial oxide on a substrate in a vacuum deposition process, the method comprising:
positioning a resistive heater and a substrate in a vacuum deposition chamber, the resistive heater having a resistive heating element, wherein the substrate comprises a wide bandgap (WBG) semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface, wherein the positioning comprises the uncoated surface being spaced apart from and facing the resistive heating element;
operating the vacuum deposition chamber at a pressure less than or equal to 5×10 −4 Torr;
generating radiative heat from the resistive heating element, wherein the radiative heat has a wavelength in a mid-infrared band of 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate; and
depositing an epitaxial oxide layer on the deposition surface of the substrate.
7. The method of claim 6 , wherein the uncoated surface of the substrate is directly heated by absorbing the radiative heat.
8. The method of claim 1 , wherein the resistive heating element is resistant to oxidation.
9. The method of claim 4 , wherein the Ga 2 O 3 is n-type doped.
10. The method of claim 6 , wherein the resistive heating element is resistant to oxidation.