Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device
A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores a treatment liquid for manufacturing a semiconductor, and the treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms and a total content of particulate metal is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.
1. A storage container comprising:
a storage portion that stores a treatment liquid for manufacturing a semiconductor,
wherein a mass ratio of Cr/Fe in a portion having a depth of 1 nm from an outermost surface of an inner wall of the storage portion that comes into contact with the treatment liquid is 1 to 3,
wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from the group consisting of Cu, Fe, and Zn, and
a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid,
wherein a material of at least a portion of the inner wall of the storage portion that comes into contact with the treatment liquid includes perfluoroalkoxy alkane.
2. The storage container according to claim 1 ,
wherein the treatment liquid is a developer or a rinsing liquid.
3. The storage container according to claim 1 ,
wherein the treatment liquid has a pH of 10.0 to 15.0.
4. The storage container according to claim 1 ,
wherein the treatment liquid includes a surfactant.
5. The storage container according to claim 1 ,
wherein the treatment liquid includes a quaternary ammonium salt.
6. The storage container according to claim 1 ,
wherein the treatment liquid includes at least one selected from the group consisting of butyl acetate (nBA), N-methyl-2-pyrrolidone (NMP), isopropanol (IPA), ethanol, methyl isobutyl carbinol (MIBC), propylene glycol monomethyl ether (PGME), cyclohexanone (CyHx), γ-butyrolactone (GBL), ethyl lactate (EL), dimethyl sulfoxide (DMSO), isoamyl acetate (iAA), a mixed solution of propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME), methyl 2-hydroxyisobutyrate (HBM), methyl ethyl ketone (MEK), and propylene carbonate (PC).
7. The storage container according to claim 1 ,
wherein the treatment liquid includes at least one selected from the group consisting of butyl acetate (nBA), methyl isobutyl carbinol (MIBC), and isoamyl acetate (iAA).
8. The storage container according to claim 1 ,
wherein the treatment liquid includes at least one selected from the group consisting of propylene glycol monomethyl ether (PGME), cyclohexanone (CyHx), ethyl lactate (EL), a mixed solution of propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME), and methyl 2-hydroxyisobutyrate (HBM).
9. The storage container according to claim 1 ,
wherein the treatment liquid includes at least isopropanol (IPA).
10. The storage container according to claim 1 ,
wherein the storage portion comprises a void portion,
wherein a void volume of the void portion in the storage portion storing the treatment liquid is 50 to 0.01 vol %.
11. The storage container according to claim 10 ,
wherein the void portion of the storage portion storing the treatment liquid is filled with a gas in which a number of particles having a diameter of 0.5 μm or more is 10 particles/L or less.
12. The storage container according to claim 10 ,
wherein the void portion of the storage portion storing the treatment liquid is filled with inert gas.
13. A storage container comprising:
a storage portion that stores a treatment liquid for manufacturing a semiconductor,
wherein a mass ratio of Cr/Fe in a portion having a depth of 1 nm from an outermost surface of an inner wall of the storage portion that comes into contact with the treatment liquid is 1 to 3,
wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from the group consisting of Cu, Fe, and Zn, and
a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid,
wherein a material of at least a portion of the inner wall of the storage portion that comes into contact with the treatment liquid includes at least one selected from the group consisting of polyethylene, polypropylene, polytetrafluoroethylene, and perfluoroalkoxy alkane.
14. The storage container according to claim 13 ,
wherein the mass ratio of Cr/Fe in the portion having the depth of 1 nm from the outermost surface of the inner wall of the storage portion that comes into contact with the treatment liquid is 2 to 3.