IP Library Granted Patent US 12,212,321
Granted Patent B1
US 12,212,321 · App. 18/340,827 · Granted Jan 28, 2025

Non-linear polar material based flip-flop

Inventors: Amrita Mathuriya (Portland, OR); Ikenna Odinaka (Durham, NC); Rajeev Kumar Dokania (Beaverton, OR); Rafael Rios (Austin, TX); Sasikanth Manipatruni (Portland, OR)
Assignee: Kepler Computing Inc.
H03K19/185H01L28/55H03K19/21H03K19/23G11C7/106G11C7/1087
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,212,321
App. No.
18/340,827
Granted
Jan 28, 2025
Kind
B1
Abstract

A low power sequential circuit (e.g., latch) uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. In one example, a sequential circuit includes pass-gates and inverters, but without a feedback mechanism or memory element. In another example, a sequential uses load capacitors (e.g., capacitors coupled to a storage node and a reference supply). The load capacitors are implemented using ferroelectric material, paraelectric material, or linear dielectric. In one example, a sequential uses minority, majority, or threshold gates with ferroelectric or paraelectric capacitors. In one example, a sequential circuit uses minority, majority, or threshold gates configured as NAND gates.

Claims (35)

1. An apparatus comprising:

a first latch; and

a second latch coupled to the first latch, wherein the first latch comprises:

a first minority gate having a first input to receive data, a second input to receive a clock, and a third input to receive a reference voltage, wherein the first minority gate is to generate a first output which is a first minority function of the data, the clock, and the reference voltage; and

a second minority gate having a fourth input to receive the first output, a fifth input to receive the first output, a sixth input to receive the clock, a seventh input to receive the reference voltage, and an eighth input, wherein the second minority gate is to generate a second output which is a second minority function of the first output, the first output, the clock, the reference voltage, and an inversion of the second output, wherein the first latch is a supervisor latch, wherein the second latch is a supervisee latch, wherein the clock is a first clock, and wherein the second latch is to receive a second clock which is an inverse of the first clock.

2. The apparatus of claim 1 , wherein the second latch comprises:

a third minority gate to receive the second output, the second clock, and the reference voltage, wherein the third minority gate is to generate a third output which is a third minority function of the second output, the second clock, and the reference voltage, wherein the second clock is an inverse of the first clock.

3. The apparatus of claim 2 , wherein the second latch comprises:

a fourth minority gate to receive the third output, the second clock, the reference voltage, and an inverse of a fourth output, wherein the fourth minority gate is to generate the fourth output which is a fourth minority function of the third output, the third output, the second clock, the reference voltage, and an inversion of the fourth output.

4. The apparatus of claim 3 , wherein the fourth minority gate includes a non-linear polar material.

5. The apparatus of claim 2 , wherein the third minority gate includes a non-linear polar material.

6. The apparatus of claim 2 , wherein the third minority gate is operable as an NAND gate.

7. The apparatus of claim 1 , wherein the reference voltage is ground.

8. The apparatus of claim 1 , wherein the first minority gate includes a non-linear polar material.

9. The apparatus of claim 1 , wherein the second minority gate includes a non-linear polar material.

10. The apparatus of claim 9 , wherein the non-linear polar material includes Mn and Sc dopants.

11. The apparatus of claim 9 , wherein the non-linear polar material includes one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.

12. The apparatus of claim 1 , wherein the first minority gate is operable as an NAND gate.

13. An apparatus comprising:

one or more circuitries to sample data by a clock based at least in part on at least two 3-input minority gates and at least two 5-input minority gates, wherein a first 5-input minority gate of the at least two 5-input minority gates has an output coupled to an input of a first 3-input minority gate of the at least two 3-input minority gates, wherein the at least two 3-input minority gates and the at least two 5-input minority gates comprise non-linear polar material, and wherein the first 3-input minority gate comprises:

a first capacitor, with the non-linear polar material, having a first terminal to receive the clock and a second terminal coupled to a node;

a second capacitor, with the non-linear polar material, having a first terminal to receive the data and a second terminal coupled to the node; and

a third capacitor, with the non-linear polar material, having a first terminal to receive the output and a second terminal coupled to the node, wherein the node is coupled to one of a 5-input minority gate of the at least two 5-input minority gates.

14. The apparatus of claim 13 , wherein the non-linear polar material includes Mn and Sc dopants.

15. The apparatus of claim 13 , wherein the non-linear polar material includes one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.

16. A system comprising:

a processor circuitry to execute one or more instructions;

a memory to store the one or more instructions; and

a communication interface communicatively coupled to the processor circuitry, wherein the processor circuitry comprises a flip-flop, which includes:

one or more circuitries to sample data by a clock based at least in part on at least two 3-input minority gates and at least two 5-input minority gates, wherein a first 5-input minority gate of the at least two 5-input minority gates has an output coupled to an input of a first 3-input minority gate of the at least two 3-input minority gates, wherein the at least two 3-input minority gates and the at least two 5-input minority gates comprise non-linear polar material, and wherein the first 3-input minority gate comprises:

a first capacitor, with the non-linear polar material, having a first terminal to receive the clock and a second terminal coupled to a node;

a second capacitor, with the non-linear polar material, having a first terminal to receive the data and a second terminal coupled to the node; and

a third capacitor, with the non-linear polar material, having a first terminal to receive the output and a second terminal coupled to the node, wherein the node is coupled to one of a 5-input minority gate of the at least two 5-input minority gates.

17. The system of claim 16 , wherein the non-linear polar material includes Mn and Sc dopants.

18. The system of claim 16 , wherein the non-linear polar material includes one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.

Continuity (3)
Continuation 18059938 · Nov 29, 2022
Continuation 17407972 · Aug 20, 2021
Continuation 17407031 · Aug 19, 2021
References Cited (109)
US 3260863A · Burns et al. · 1966 [cited by applicant]
US 3456126A · Kaplan · 1969 [cited by examiner]
US 3524977A · Wang · 1970 [cited by applicant]
US 5381352A · Shou et al. · 1995 [cited by applicant]
US 5612632A · Mahant-Shetti et al. · 1997 [cited by applicant]
US 5661421A · Ohmi · 1997 [cited by examiner]
US 5818380A · Ito et al. · 1998 [cited by applicant]
US 5835045A · Ogawa et al. · 1998 [cited by applicant]
US 5926057A · Ogawa et al. · 1999 [cited by applicant]
US 5937399A · Ohmi et al. · 1999 [cited by applicant]
US 5978827A · Ichikawa · 1999 [cited by applicant]
US 5982211A · Ko · 1999 [cited by applicant]
US 6043675A · Miyamoto · 2000 [cited by applicant]
US 6166583A · Kochi et al. · 2000 [cited by applicant]
US 6198652B1 · Kawakubo et al. · 2001 [cited by applicant]
US 6208282B1 · Miyamoto · 2001 [cited by applicant]
US 6239639B1 · Yaoi et al. · 2001 [cited by applicant]
US 6456992B1 · Shibata et al. · 2002 [cited by applicant]
US 6489825B1 · Pasqualini · 2002 [cited by applicant]
US 6794914B2 · Sani et al. · 2004 [cited by applicant]
US 7183825B2 · Padhye et al. · 2007 [cited by applicant]
US 7409631B2 · Tschanz et al. · 2008 [cited by applicant]
US 7837110B1 · Hess et al. · 2010 [cited by applicant]
US 7897454B2 · Wang et al. · 2011 [cited by applicant]
US 8247855B2 · Summerfelt · 2012 [cited by applicant]
US 8332722B1 · Rojas et al. · 2012 [cited by applicant]
US 8957716B2 · Penzes · 2015 [cited by applicant]
US 9276040B1 · Marshall et al. · 2016 [cited by applicant]
US 9324405B2 · Evans, Jr. et al. · 2016 [cited by applicant]
US 9559671B1 · Jagannathan et al. · 2017 [cited by applicant]
US 9697882B1 · Evans, Jr. et al. · 2017 [cited by applicant]
US 9858979B1 · Derner et al. · 2018 [cited by applicant]
US 9973329B2 · Hood et al. · 2018 [cited by applicant]
US 10217522B2 · Wang et al. · 2019 [cited by applicant]
US 10579536B2 · Clark · 2020 [cited by applicant]
US 10622050B2 · El-Mansouri et al. · 2020 [cited by applicant]
US 10679782B2 · Manipatruni et al. · 2020 [cited by applicant]
US 10944404B1 · Manipatruni · 2021 [cited by examiner]
US 11025254B1 · Manipatruni et al. · 2021 [cited by applicant]
US 11165430B1 · Manipatruni et al. · 2021 [cited by applicant]
US 11277137B1 · Manipatruni · 2022 [cited by examiner]
US 20010052619A1 · Inoue et al. · 2001 [cited by applicant]
US 20030095452A1 · Takasu et al. · 2003 [cited by applicant]
US 20040183508A1 · Toyoda et al. · 2004 [cited by applicant]
US 20050017757A1 · Fujimori · 2005 [cited by applicant]
US 20050206421A1 · Nishikawa et al. · 2005 [cited by applicant]
US 20060227596A1 · Thayer · 2006 [cited by applicant]
US 20070226600A1 · Ogawa · 2007 [cited by applicant]
US 20100301959A1 · Liu et al. · 2010 [cited by applicant]
US 20140049286A1 · Clark · 2014 [cited by applicant]
US 20150337983A1 · Dolenti et al. · 2015 [cited by applicant]
US 20160218724A1 · Strzelecki et al. · 2016 [cited by applicant]
US 20170337983A1 · Wang et al. · 2017 [cited by applicant]
US 20180076815A1 · Vigeant et al. · 2018 [cited by applicant]
US 20190074295A1 · Schröder · 2019 [cited by applicant]
US 20190318775A1 · Rakshit et al. · 2019 [cited by applicant]
US 20190348098A1 · El-Mansouri et al. · 2019 [cited by applicant]
US 20200052680A1 · Ho · 2020 [cited by applicant]
US 20200091407A1 · Liu et al. · 2020 [cited by applicant]
US 20200091414A1 · Liu · 2020 [cited by examiner]
US 20200210233A1 · Chen et al. · 2020 [cited by applicant]
US 20210216098A1 · Bourgeault · 2021 [cited by applicant]
US 20220200600A1 · Manipatruni et al. · 2022 [cited by applicant]
JP 2004153700A · 2004 [cited by applicant]
KR 20160089141A · 2016 [cited by applicant]
KR 101754656B1 · 2017 [cited by applicant]
TW 201640707 · 2016 [cited by applicant]
WO 2019005175A1 · 2019 [cited by applicant]
“Kepler Logic”, Named for Amalie Emmy Noether @ https://en.wikipedia.org/wiki/Emmy_Noether. Downloaded from internet on Jan. 10, 2020. [cited by applicant]
1st Office Action notified May 19, 2022 for Taiwan Patent Application No. 110133422. [cited by applicant]
Fichtner, S. et al., “AlScN: A III-V semiconductor based ferroelectric”, Journal of Applied Physics 125, 114103 (2019); https://doi.org/10.1063/1.5084945, 2019, 28 pages. [cited by applicant]
Final Office Action notified Apr. 4, 2022 for U.S. Appl. No. 17/129,849. [cited by applicant]
Final Office Action notified Aug. 22, 2022 for U.S. Appl. No. 17/407,909. [cited by applicant]
Final Office Action notified Nov. 24, 2020 for U.S. Appl. No. 16/797,299. [cited by applicant]
Final Office Action notified Nov. 27, 2020 for U.S. Appl. No. 16/729,275. [cited by applicant]
First Office Action notified Jul. 7, 2021 for Taiwan Patent Application No. 109146061. [cited by applicant]
International Search Report & Written Opinion notified Apr. 15, 2021 for U.S. Patent Application No. PCT/US2020/066961. [cited by applicant]
International Search Report & Written Opinion notified Jan. 7, 2022 for U.S. Patent Application No. PCT/US2021/048762. [cited by applicant]
Muller, J. et al., “Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects”, ECS Journal of Solid State Science and Technology, 4 (5) N30-N35 (215). 6 pages. [cited by applicant]
Muroga, S., Threshold Logic and Its Applications, Wiley-Interscience, a Division of John Wiley & Sons, Inc. New York, 1971. 8 page excerpt. [cited by applicant]
Non-Final Office Action notified Apr. 22, 2020 for U.S. Appl. No. 16/729,275. [cited by applicant]
Non-Final Office Action notified Aug. 2, 2022 for U.S. Appl. No. 17/408,053. [cited by applicant]
Non-Final Office Action notified Aug. 3, 2022 for U.S. Appl. No. 17/407,909. [cited by applicant]
Non-Final Office Action notified Aug. 7, 2020 for U.S. Appl. No. 16/729,275. [cited by applicant]
Non-Final Office Action notified Aug. 11, 2020 for U.S. Appl. No. 16/796,824. [cited by applicant]
Non-Final Office Action notified Aug. 13, 2020 for U.S. Appl. No. 16/797,299. [cited by applicant]
Non-Final Office Action notified Aug. 15, 2022 for U.S. Appl. No. 17/408,000. [cited by applicant]
Non-Final Office Action notified Aug. 31, 2022 for U.S. Appl. No. 17/390,831. [cited by applicant]
Non-Final Office Action notified Feb. 22, 2022 for U.S. Appl. No. 17/129,849. [cited by applicant]
Non-Final Office Action notified Nov. 24, 2020 for U.S. Appl. No. 16/796,824. [cited by applicant]
Notice of Allowance notified Apr. 14, 2022 for U.S. Appl. No. 17/129,849. [cited by applicant]
Notice of Allowance notified Apr. 27, 2022 for U.S. Appl. No. 17/390,830. [cited by applicant]
Notice of Allowance notified Aug. 17, 2022 for U.S. Appl. No. 17/408,053. [cited by applicant]
Notice of Allowance notified Feb. 3, 2021 for U.S. Appl. No. 16/729,275. [cited by applicant]
Notice of Allowance notified Feb. 5, 2020 for U.S. Appl. No. 16/796,824. [cited by applicant]
Notice of Allowance notified Feb. 7, 2022 for U.S. Appl. No. 17/407,031. [cited by applicant]
Notice of Allowance notified Jan. 29, 2020 for U.S. Appl. No. 16/797,299. [cited by applicant]
Notice of Allowance notified Jul. 20, 2021 for U.S. Appl. No. 17/129,842. [cited by applicant]
Notice of Allowance notified May 19, 2023 for U.S. Patent Application No. KP12P025US-C5. [cited by applicant]
Notice of Allowance notified Nov. 2, 2022 for U.S. Appl. No. 17/407,972. [cited by applicant]
Notice of Allowance notified Nov. 3, 2020 for U.S. Appl. No. 16/797,296. [cited by applicant]
Notice of Allowance notified Nov. 9, 2022 for U.S. Appl. No. 17/390,831. [cited by applicant]
Notice of Allowance notified Sep. 1, 2022 for Taiwan Patent Application No. 110133422. [cited by applicant]
Notice of Allowance notified Sep. 7, 2022 for U.S. Appl. No. 17/407,909. [cited by applicant]
Notice of Allowance notified Sep. 15, 2022 for U.S. Appl. No. 17/408,000. [cited by applicant]
Notice of Allowance notified Sep. 23, 2022 for U.S. Appl. No. 17/317,482. [cited by applicant]
Notice of Allowance notified Sep. 29, 2021 for TW Patent Application No. 109146061. [cited by applicant]
Subbarao, E., “Ferroelectric and antiferroelectric materials”, Department of Metallurgical Engineering, Indian Institute of Technology, Kanpur, IN. First published Mar. 15, 2011. Ferroelectrics, 5:1, 267-280. [cited by applicant]
Wang et al., “Ferroelectric Transistor based Non-Volatile Flip-Flop”, ISLPED '16: Proceedings of the 2016 International Symposium on Low Power Electronics and Design, Aug. 2016, pp. 10-15, https://doi.org/10.1145/293458… [cited by applicant]